Xiaoyun Wei

Modeling and Characterization of Intermodulation Linearity on a 90-nm RF CMOS Technology

G. Niu, Ying Li, Xiaoyun Wei, 2009, IEEE Transactions on Microwave Theory and Techniques.

Modeling of temperature dependent IC-VBE characteristics of SiGe HBTs from 43–400K

Ziyan Xu, Guofu Niu, J. Cressler, 2008, 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

3-D Simulation of SEU Hardening of SiGe HBTs Using Shared Dummy Collector

Guofu Niu, R. Reed, P. Marshall, 2007, IEEE Transactions on Nuclear Science.

Intermodulation linearity characteristics of CMOS transistors in a 0.13 /spl mu/m process

Jun Pan, S.S. Taylor, Guofu Niu, 2005, 2005 IEEE Radio Frequency integrated Circuits (RFIC) Symposium - Digest of Papers.