L. Gouyet

Experimental Characterization and Simulation of Electron-Induced SEU in 45-nm CMOS Technology

N. Chatry, E. Lorfèvre, R. Ecoffet, 2014, IEEE Transactions on Nuclear Science.

Single event effect assessment of a 1-Mbit commercial magneto-resistive random access memory (MRAM)

P. Adell, B. Vermeire, Slaven Moro, 2017, 2017 IEEE Radiation Effects Data Workshop (REDW).