K. Tsutsui

发表

Bipolar Transistor Test Structures for Extracting Minority Carrier Lifetime in IGBTs

H. Iwai, K. Takeuchi, T. Saraya, 2020, IEEE Transactions on Semiconductor Manufacturing.

Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss

H. Iwai, T. Saraya, T. Hiramoto, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

Vertical Bipolar Transistor Test Structure for Measuring Minority Carrier Lifetime in IGBTs

H. Iwai, K. Takeuchi, T. Saraya, 2019, 2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS).

3300V Scaled IGBTs Driven by 5V Gate Voltage

H. Iwai, K. Takeuchi, T. Saraya, 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Modeling and Simulation of Si IGBTs

H. Iwai, T. Saraya, T. Hiramoto, 2020, 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices

H. Iwai, T. Saraya, T. Hiramoto, 2021, 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).

Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs

H. Iwai, K. Takeuchi, T. Saraya, 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).

New Methodology for Evaluating Minority Carrier Lifetime for Process Assessment

Ken Takeuchi, Hiroshi Iwai, Kuniyuki Kakushima, 2018, 2018 IEEE Symposium on VLSI Circuits.

Low-Temperature MoS2 Film Formation Using Sputtering and H2S Annealing

H. Wakabayashi, K. Tsutsui, I. Muneta, 2019, IEEE Journal of the Electron Devices Society.

Low-carrier density sputtered-MoS2 film by H2S annealing for normally-off accumulation-mode FET

H. Wakabayashi, K. Kakushima, K. Tsutsui, 2017, 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM).

Crystallinity improvement using migration-enhancement methods for sputtered-MoS2 films

H. Wakabayashi, K. Kakushima, K. Tsutsui, 2017, 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM).

Low-Temperature MoS2 Film Formation Using Sputtering and H2S Annealing

H. Wakabayashi, K. Tsutsui, I. Muneta, 2019, IEEE Journal of the Electron Devices Society.

A possible origin of the large leakage current in ferroelectric Al1−x Sc x N films

H. Wakabayashi, K. Kakushima, T. Hoshii, 2021 .

NiSi2 as a bottom electrode for enhanced endurance of ferroelectric Y-doped HfO2 thin films

H. Funakubo, H. Wakabayashi, K. Kakushima, 2020, Japanese Journal of Applied Physics.

Optimization of gate insulator material for GaN MIS-HEMT

H. Iwai, Y. Lin, K. Kakushima, 2016, 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Relaxation of Self-Heating-Effect for Stacked-Nanowire FET and p/n-Stacked 6T-SRAM Layout

H. Wakabayashi, K. Kakushima, K. Tsutsui, 2018, IEEE Journal of the Electron Devices Society.

Effects of N2-Based Annealing on the Reliability Characteristics of Tungsten/ La2O3/Silicon Capacitors

H. Iwai, T. Hattori, N. Sugii, 2007 .

Mechanism for High Hall-Effect Mobility in Sputtered-MoS2 Film Controlling Particle Energy

H. Wakabayashi, K. Kakushima, K. Tsutsui, 2018, 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).

The effect of isotropic and anisotropic scattering in drain region of ballistic channel diode

H. Iwai, N. Sugii, A. Nishiyama, 2010, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology.

Self-heating-aware cell design for p/n-vertically-integrated nanowire on FinFET beyond 3 nm technology node

H. Wakabayashi, K. Kakushima, A. Hori, 2020 .

Thermal stability of Ni silicide films on heavily doped n+ and p+ Si substrates

T. Nagata, T. Chikyow, H. Iwai, 2008 .

Selection of rare earth silicate with SrO capping for EOT scaling below 0.5 nm

H. Iwai, T. Hattori, N. Sugii, 2009, 2009 Proceedings of the European Solid State Device Research Conference.

Self-Heating-Effect-Free p/n-Stacked-NW on Bulk-FinFETs and 6T-SRAM Layout

H. Wakabayashi, K. Kakushima, K. Tsutsui, 2018, 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM).

Surface modification of CaF2 in atomic layer scale by electron beam exposure

A. Izumi, S. Furukawa, S. M. Hwang, 1994 .

Antiphase disorder in epitaxial GaAs films grown on CaxSr1−xF2 (100) with higher crystallographic symmetry

H. Ishiwara, S. Furukawa, K. Tsutsui, 1986 .

Analysis of Threshold Voltage Variations in Fin Field Effect Transistors

H. Iwai, V. Rao, P. Ahmet, 2011 .

Analysis of Threshold Voltage Variation in Fin Field Effect Transistors: Separation of Short Channel Effects

H. Iwai, V. Rao, P. Ahmet, 2010 .

Rare earth oxides in microelectronics

H. Iwai, V. Rao, P. Ahmet, 2006 .

The effect of remote Coulomb scattering on electron mobility in La2O3 gate stacked MOSFETs

H. Iwai, N. Sugii, H. Iwai, 2012 .

Effect of thin Si insertion at metal gate/high-k interface on electrical characteristics of MOS device with La2O3

H. Iwai, N. Sugii, A. Nishiyama, 2011 .

N-type conduction of sputter-deposited polycrystalline Al0.78Sc0.22N films by Si ion implantation

H. Wakabayashi, K. Kakushima, T. Hoshii, 2021 .

Infrared spectroscopic analysis of reactively formed La-silicate interface layer at La2O3/Si substrates

H. Iwai, H. Wakabayashi, K. Kakushima, 2017 .

SINGLE-ELECTRON DEVICES FORMED BY SELF-ORDERING METAL NANODROPLET ARRAYS ON EPITAXIAL CAF2 FILM

K. Tsutsui, K. Kawasaki, M. Mochizuki, 1999 .

Artificial Control of Dot Sites for Ga Droplet Arrays on CaF2Films by Surface Steps and Electron Beam Modifications

K. Tsutsui, K. Uejima, Jun Takeshita, 1997 .

Site Control of Ga Droplet Array on CaF2by Surface Modification Using a Focused Electron Beam

K. Tsutsui, K. Uejima, K. Kawasaki, 1996 .

Metal inserted poly-Si with high temperature annealing for achieving EOT of 0.62nm in La-silicate MOSFET

H. Iwai, N. Sugii, A. Nishiyama, 2011, 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Silicate Reaction Control at Lanthanum Oxide and Silicon Interface for Equivalent Oxide Thickness of 0.5 nm: Adjustment of Amount of Residual Oxygen Atoms in Metal Layer

H. Iwai, T. Hattori, N. Sugii, 2011 .

Optimum Growth Conditions of GaAs(111)B Layers for Good Electrical Properties by Molecular Beam Epitaxy

S. Furukawa, K. Tsutsui, H. Mizukami, 1990 .

Electron transport mechanism of tungsten trioxide powder thin film studied by investigating effect of annealing on resistivity

Wei Li, Hiroshi Iwai, Nobuyuki Sugii, 2015, Microelectron. Reliab..

Improvement of charge/discharge performance for lithium ion batteries with tungsten trioxide electrodes

Wei Li, Hiroshi Iwai, Nobuyuki Sugii, 2015, Microelectron. Reliab..

Dependence of ohmic contact properties on AlGaN layer thickness for AlGaN/GaN high-electron-mobility transistors

H. Iwai, W. Saito, H. Wakabayashi, 2016 .

One-chip operation of GaN-based P-channel and N-channel heterojunction field effect transistors

H. Iwai, H. Ohashi, H. Wakabayashi, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Enhancement-Mode GaN MIS-HEMTs With LaHfOx Gate Insulator for Power Application

H. Iwai, K. Kakushima, J. Yao, 2017, IEEE Electron Device Letters.

GaN-based complementary metal–oxide–semiconductor inverter with normally off Pch and Nch MOSFETs fabricated using polarisation-induced holes and electron channels

H. Iwai, H. Ohashi, H. Wakabayashi, 2018 .

Study of band offsets in CdF2/CaF2/Si(111) heterostructures using x‐ray photoelectron spectroscopy

A. Izumi, K. Tsutsui, Y. Hirai, 1995 .

GaN high electron mobility transistors (HEMTs) with self-upward-polarized AlScN gate dielectrics toward enhancement-mode operation

H. Wakabayashi, K. Kakushima, E. Chang, 2022, Japanese Journal of Applied Physics.

Vacancy-Boron Complexes in Plasma Immersion Ion-Implanted Si Probed by a Monoenergetic Positron Beam

A. Uedono, H. Iwai, T. Hattori, 2010 .

Vacancy-type defects in ultra-shallow junctions fabricated using plasma doping studied by positron annihilation

A. Uedono, H. Iwai, T. Hattori, 2010, 2010 International Workshop on Junction Technology Extended Abstracts.

Space-Charge-Limited Currents in La2O3 Thin Films Deposited by E-Beam Evaporation after Low Temperature Dry-Nitrogen Annealing

Hiroshi Iwai, Kazuo Tsutsui, Shun-ichiro Ohmi, 2005 .

Covalent Nature in La-Silicate Gate Dielectrics for Oxygen Vacancy Removal

H. Iwai, N. Sugii, A. Nishiyama, 2012, IEEE Electron Device Letters.

Analysis of variation in leakage currents of Lanthana thin films

Hiroshi Iwai, Kazuo Tsutsui, Shun-ichiro Ohmi, 2005 .

Improvement of interfacial properties with interfacial layer in La2O3/Ge structure

H. Iwai, N. Sugii, P. Ahmet, 2007 .

Electrical Characteristics of Rare Earth (La, Ce, Pr and Tm) Oxides/Silicates Gate Dielectric

T. Hattori, N. Sugii, A. Nishiyama, 2010 .

Capacitance–Voltage Characterization of La2O3 Metal–Oxide–Semiconductor Structures on In0.53Ga0.47As Substrate with Different Surface Treatment Methods

H. Iwai, T. Hattori, N. Sugii, 2011 .

Silicate Reaction Control at Lanthanum Oxide and Silicon Interface for Equivalent Oxide Thickness of 0.5 nm: Adjustment of Amount of Residual Oxygen Atoms in Metal Layer

H. Iwai, T. Hattori, N. Sugii, 2011 .

Observation of band bending of metal/high-k Si capacitor with high energy x-ray photoemission spectroscopy and its application to interface dipole measurement

H. Iwai, N. Sugii, K. Tachi, 2008 .

Electrical Characteristics of High-k La2O3 Thin Film Deposited by E-Beam Evaporation Method

H. Iwai, K. Tsutsui, S. Ohmi, 2003 .

Improving electrical characteristics of W/HfO2/In0.53Ga0.47As gate stacks by altering deposition techniques

H. Iwai, N. Sugii, A. Nishiyama, 2011 .

Electrical Properties of Yttrium-Titanium Oxide High-k Gate Dielectric on Ge

H. Iwai, N. Sugii, A. Nishiyama, 2010 .

Reaction and formation of La-silicate gate dielectrics on SiC substrates

Sugii, H. Iwai, S. Yamakawa, 2015 .

High Hall-Effect Mobility of Large-Area Atomic-Layered Polycrystalline ZrS2 Film Using UHV RF Magnetron Sputtering and Sulfurization

H. Wakabayashi, K. Kakushima, T. Hoshii, 2019, IEEE Journal of the Electron Devices Society.

Enhancement-mode accumulation capacitance–voltage characteristics in TiN/ALD-Al2O3/sputtered-MoS2 top-gated stacks

H. Wakabayashi, K. Kakushima, T. Hoshii, 2020, Japanese Journal of Applied Physics.

Plasma doping and subsequent rapid thermal processing for ultra shallow junction formation

H. Iwai, Y. Sasaki, K. Tsutsui, 2005, 2005 13th International Conference on Advanced Thermal Processing of Semiconductors.

Positive Seebeck coefficient of niobium-doped MoS2 film deposited by sputtering and activated by sulfur vapor annealing

H. Wakabayashi, K. Kakushima, T. Tatsumi, 2022, Japanese Journal of Applied Physics.

Impact of structural parameter scaling on on-state voltage in 1200 V scaled IGBTs

H. Iwai, K. Takeuchi, T. Saraya, 2019, Japanese Journal of Applied Physics.

An extraction method of charge trapping site distribution in AlGaN layer in GaN HEMT

H. Iwai, T. Baba, H. Wakabayashi, 2015, 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

Dependence of Ti/C ratio on Ohmic contact with tic electrode for AlGaN/GaN structure

H. Iwai, N. Sugii, W. Saito, 2014, 2014 IEEE Workshop on Wide Bandgap Power Devices and Applications.

An ohmic contact process for AlGaN/GaN structures using TiSi2 electrodes

H. Iwai, N. Sugii, W. Saito, 2013, The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications.

Further EOT Scaling below 0.4 nm for High-k Gated MOSFET

H. Iwai, T. Hattori, N. Sugii, 2008 .

Selection of rare earth silicates for highly scaled gate dielectrics

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2010 .

Rare Earth Oxide Capping Effect on La2O3 Gate Dielectrics for Equivalent Oxide Thickness Scaling toward 0.5 nm

T. Hattori, N. Sugii, A. Nishiyama, 2011 .

Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulphide atomic layered structure

H. Wakabayashi, K. Kakushima, K. Tsutsui, 2022, Scientific Reports.

Photovoltaic properties of lateral ultra-thin Si p-i-n structure

H. Iwai, H. Wakabayashi, K. Kakushima, 2018, 2018 China Semiconductor Technology International Conference (CSTIC).

Photovoltaic Characteristics of Ultra-Thin Single Crystalline Silicon Solar Cells

H. Iwai, H. Wakabayashi, K. Kakushima, 2016 .

Interface and electrical properties of Tm2O3 gate dielectrics for gate oxide scaling in MOS devices

H. Iwai, T. Hattori, N. Sugii, 2011 .

Minority carrier lifetime extraction methodology based on parallel pn diodes with a field plate

H. Wakabayashi, K. Kakushima, T. Yoda, 2022, Japanese Journal of Applied Physics.

Influence of sputtering power on the switching and reliability of ferroelectric Al0.7Sc0.3N films

H. Wakabayashi, K. Kakushima, T. Hoshii, 2022, Japanese Journal of Applied Physics.

A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2014, Microelectron. Reliab..

Molecular-beam epitaxy of conductive CdF2 films on Si substrates by simultaneous Cd exposure

K. Tsutsui, T. Kobori, 2001 .

Atomic layer deposition of Y2O3 thin films with a high growth per cycle by Ar multiple boost injection

H. Wakabayashi, K. Kakushima, T. Hoshii, 2020, Japanese Journal of Applied Physics.

Formation of GaN nanopillars by selective area growth using ammonia gas source molecular beam epitaxy

H. Hirayama, Y. Aoyagi, K. Tsutsui, 2002 .

Ni silicidation on heavily doped Si substrates

T. Nagata, T. Chikyow, H. Iwai, 2008, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology.

Multi-layered MoS2 film formed by high-temperature sputtering for enhancement-mode nMOSFETs

H. Iwai, N. Sugii, A. Nishiyama, 2015 .

MESFET's on a GaAs-on-insulator structure

H. Ishiwara, S. Furukawa, K. Tsutsui, 1987, IEEE Electron Device Letters.

Gate Technology Contributions to Collapse of Drain Current in AlGaN/GaN Schottky HEMT

Hiroshi Iwai, Nobuyuki Sugii, Kenji Natori, 2014, IEEE Transactions on Electron Devices.

GaN quantum-dot formation by self-assembling droplet epitaxy and application to single-electron transistors

H. Hirayama, Y. Aoyagi, A. Kinoshita, 2001 .

Production-worthy approach of plasma doping (PD)

H. Iwai, Y. Sasaki, K. Tsutsui, 2008, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology.

Individual Atomic Imaging of Multiple Dopant Sites in As-Doped Si Using Spectro-Photoelectron Holography.

T. Matsushita, H. Wakabayashi, K. Kakushima, 2017, Nano letters.

La2O3 gate dielectrics for AlGaN/GaN HEMT

Hiroshi Iwai, Kuniyuki Kakushima, Hitoshi Wakabayashi, 2016, Microelectron. Reliab..

Effects of Post Dielectric Deposition and Post Metallization Annealing Processes on Metal/Dy2O3/Si(100) Diode Characteristics

H. Iwai, K. Tsutsui, S. Ohmi, 2004 .

Interface engineering of BEOL compatible ferroelectric Y:HfO2 device for enhanced endurance

H. Funakubo, H. Wakabayashi, K. Kakushima, 2020, 2020 IEEE International Memory Workshop (IMW).

Valence number transition and silicate formation of cerium oxide films on Si(100)

H. Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2012 .

Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering

H. Wakabayashi, K. Kakushima, E. Chang, 2021 .

Strong edge-induced ferromagnetism in sputtered MoS2 film treated by post-annealing

H. Wakabayashi, K. Kakushima, K. Tsutsui, 2019, Applied Physics Letters.

Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer

Hiroshi Iwai, Nobuyuki Sugii, Chunmeng Dou, 2012, Microelectron. Reliab..

Optical in situ observation of electron beam induced surface modification of epitaxial fluoride films

M. Tomisaka, K. Tsutsui, K. Kawasaki, 1997 .

Characteristics of Ultrathin Lanthanum Oxide Films on Germanium Substrate: Comparison with Those on Silicon Substrate

H. Iwai, T. Hattori, N. Sugii, 2007 .

Effects of the Two-Step Growth Method for GaAs Grown on CaF2/Si(111) with the Electron Beam Surface Modification Technique.

K. Tsutsui, K. Kawasaki, 1999 .

Epitaxial Relations in Fluoride Films Grown on GaAs{lll} and Ge(lll) Substrates

K. Tsutsui, T. Asano, H. Ishiwarya, 1985 .

Epitaxial Relations in Lattice-Matched (Ca, Sr)F2 Films Grown on GaAs{111} and Ge(111) Substrates

H. Ishiwara, S. Furukawa, K. Tsutsui, 1984 .

Sm2+ Photoluminescence and X-Ray Scattering Studies of A- and B-Type Epitaxial CaF2 Layers on Si(111)

S. Furukawa, J. Harada, I. Takahashi, 1994 .

Electron tunneling in MIS capacitors with the MBE-grown fluoride layers on Si(111) and Ge(111): Role of transverse momentum conservation

V. Fedorov, M. Vexler, K. Tsutsui, 2011 .

High insulating quality CaF2 pseudomorphic films on Si(111)

S. Tyaginov, M. Vexler, K. Tsutsui, 2007 .

Epitaxial relations in CaxSr1−xF2 films grown on GaAs {111} and Ge(111) substrates

H. Ishiwara, S. Furukawa, K. Tsutsui, 1985 .

Ion beam mixing of Pt/GaAs and formation of ohmic contacts

S. Furukawa, K. Tsutsui, 1984 .

Thermal-stability improvement of LaON thin film formed using nitrogen radicals

H. Iwai, N. Sugii, K. Tachi, 2007 .

Field cycling behavior and breakdown mechanism of ferroelectric Al0.78Sc0.22N films

H. Wakabayashi, K. Kakushima, E. Chang, 2022, Japanese Journal of Applied Physics.

On the thickness scaling of ferroelectricity in Al0.78Sc0.22N films

H. Wakabayashi, K. Kakushima, T. Hoshii, 2021, Japanese Journal of Applied Physics.

Highly Oriented Growth of AlxSc1-X N Ferroelectric Film on W Bottom Electrodes

H. Wakabayashi, K. Kakushima, T. Hoshii, 2020, ECS Meeting Abstracts.

Electrical Characterization of Sputter Deposited AlxSc1-XN Thin Films

H. Wakabayashi, K. Kakushima, T. Hoshii, 2020, ECS Meeting Abstracts.

Sputter-Deposited-MoS2 ${n}$ MISFETs With Top-Gate and Al2O3 Passivation Under Low Thermal Budget for Large Area Integration

H. Wakabayashi, A. Ogura, K. Kakushima, 2018, IEEE Journal of the Electron Devices Society.

Low-Carrier-Density Sputtered MoS2 Film by Vapor-Phase Sulfurization

H. Wakabayashi, A. Ogura, K. Kakushima, 2018, Journal of Electronic Materials.

Sheet Resistance Reduction of MoS₂ Film Using Sputtering and Chlorine Plasma Treatment Followed by Sulfur Vapor Annealing

H. Wakabayashi, K. Kakushima, T. Tatsumi, 2021, IEEE Journal of the Electron Devices Society.

Reactive Ion Etched II-VI Quantum Dots: Dependence of Etched Profile on Pattern Geometry

C. Wilkinson, E. Hu, K. Tsutsui, 1993 .

Space-charge-limited current conductions in La/sub 2/O/sub 3/ thin films deposited by e-beam evaporation after low temperature dry-nitrogen annealing [gate oxide applications]

H. Iwai, K. Tsutsui, S. Ohmi, 2004, Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850).

Nanometer fabrication techniques for wide-gap II-VI semiconductors and their optical characterization

C. Wilkinson, K. Tsutsui, M. Foad, 1994 .

Optical Spectroscopy of Dry Etched Zinc Telluride

C. Wilkinson, K. Tsutsui, M. Foad, 1993 .

Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact

H. Wakabayashi, K. Kakushima, T. Hoshii, 2023, IEEE Journal of the Electron Devices Society.

Quantitative relationship between sputter-deposited-MoS2 properties and underlying-SiO2 surface roughness

H. Wakabayashi, A. Ogura, K. Kakushima, 2017 .

Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process

N. Sugii, A. Nishiyama, P. Ahmet, 2012 .

SrO capping effect for La2O3/Ce-silicate gate dielectrics

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2010, Microelectron. Reliab..

Low-leakage MIS structures with 1.5-6 nm CaF2 insulating layer on Si(11 1)

I. Grekhov, S. Tyaginov, M. Vexler, 2007 .

Fluoride Resonant Tunneling Diodes on Si Substrates Improved by Additional Thermal Oxidation Process

K. Tsutsui, So Watanabe, M. Maeda, 2004 .

Reduction of contact resistance on AlGaN/GaN HEMT structures introducing uneven AlGaN layers

W. Saito, H. Wakabayashi, K. Kakushima, 2015 .

Electrical Characterization of Atomic Layer Deposited La2O3 Films on In0.53Ga0.47As Substrates

H. Iwai, N. Sugii, A. Nishiyama, 2013 .

Advantage of further scaling in gate dielectrics below 0.5 nm of equivalent oxide thickness with La2O3 gate dielectrics

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2010, Microelectron. Reliab..

Physical and electrical properties of ultra-thin nickel silicide Schottky diodes on Si (100)

N. Sugii, H. Iwai, H. Nohira, 2013 .

Si/Ni-Silicide Schottky junctions with atomically flat interfaces using NiSi2 source

K. Kakushima, H. Iwai, K. Ohmori, 2011, 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Normally-Off Sputtered-MoS2 nMISFETs with MoSi2 Contact by Sulfur Powder Annealing and ALD Al2O3 Gate Dielectric for Chip Level Integration

W. Cao, H. Wakabayashi, A. Ogura, 2019, 2019 19th International Workshop on Junction Technology (IWJT).

Influence of sputtering gas on resistivity of thin Ni silicide films

H. Iwai, N. Sugii, A. Nishiyama, 2015, 2015 China Semiconductor Technology International Conference.

Analysis of irregular increase in sheet resistance of Ni silicides on transition from NiSi to NiSi2

H. Iwai, P. Ahmet, K. Kakushima, 2008 .

Annealing Reaction for Ni Silicidation of Si Nanowire

Hiroshi Iwai, Nobuyuki Sugii, Kenji Natori, 2009 .

Thermal stability of NiSi controlled by post silicidation metal doping method

H. Iwai, P. Ahmet, K. Kakushima, 2006, 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings.

Site control of metal dot structures on fluoride surface by electron beam exposure

K. Tsutsui, K. Uejima, K. Kawasaki, 1996 .

Surface modification of CaF2 on Si(111) by low‐energy electron beam for over growth of GaAs films

A. Izumi, S. Furukawa, K. Tsutsui, 1994 .

Cerium oxide capping on Y-doped HfO2 films for ferroelectric phase stabilization with endurance improvement

H. Wakabayashi, K. Kakushima, E. Chang, 2021, Japanese Journal of Applied Physics.

Post metallization annealing study in La2O3/Ge MOS structure

H. Iwai, N. Sugii, P. Ahmet, 2009 .

La2O3/In0.53Ga0.47As metal–oxide-semiconductor capacitor with low interface state density using TiN/W gate electrode

H. Iwai, N. Sugii, H. Nohira, 2013 .

Reliability characteristics of W-La2O3 structures compared with those of HfO2-based gate oxides

H. Iwai, T. Hattori, N. Sugii, 2008, 2008 IEEE International Conference on Electron Devices and Solid-State Circuits.

Activated boron and its concentration profiles in heavily doped Si studied by soft x-ray photoelectron spectroscopy and Hall measurements

H. Iwai, T. Hattori, H. Nohira, 2008 .

Structure of Lattice-Matched CaxSr1-xF2 Epilayers on GaAs(111)B Surface Analyzed by the X-Ray Standing-Wave Method

H. Hashizume, K. Tsutsui, Y. Saitoh, 1988 .

Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2011, Microelectron. Reliab..

ZrS2 symmetrical-ambipolar FETs with near-midgap TiN film for both top-gate electrode and Schottky-barrier contact

H. Wakabayashi, K. Kakushima, K. Tsutsui, 2021, Japanese Journal of Applied Physics.

Importance of crystallinity improvement in MoS2 film by compound sputtering even followed by post sulfurization

H. Wakabayashi, K. Kakushima, T. Tatsumi, 2021, Japanese Journal of Applied Physics.

High-mobility and low-carrier-density sputtered MoS2 film formed by introducing residual sulfur during low-temperature in 3%-H2 annealing for three-dimensional ICs

H. Wakabayashi, K. Kakushima, K. Tsutsui, 2017 .

Carrier separation and Vth measurements of W-La2O3 gated MOSFET structures after electrical stress

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2007, IEICE Electron. Express.

Reduction of conductance mismatch in Fe/Al2O3/MoS2 system by tunneling-barrier thickness control

H. Wakabayashi, K. Kakushima, K. Tsutsui, 2018 .

Observation of Wake-up Effect on Ferroelectric Y:HfO2 Thickness Scaling

H. Wakabayashi, K. Kakushima, T. Hoshii, 2020 .

Effect of Post-Metallization Annealing on Electrical Characteristics of La2O3 Gate Thin Films

Hiroshi Iwai, Kazuo Tsutsui, Shun-ichiro Ohmi, 2005 .

Chip-Level-Integrated nMISFETs with Sputter-Deposited-MoS2 Thin Channel Passivated by Al2O3 Film and TiN Top Gate

H. Wakabayashi, A. Ogura, K. Kakushima, 2018, 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM).

Ohmic Contact Properties Depending on AlGaN Layer Thickness for AlGaN/GaN High Electron Mobility Transistor Structures

H. Iwai, W. Saito, H. Wakabayashi, 2014 .

Elucidation of PVD MoS2 film formation process and its structure focusing on sub-monolayer region

H. Wakabayashi, K. Kakushima, K. Tsutsui, 2021, Japanese Journal of Applied Physics.

Electrical properties of vacuum annealed La2O3 thin films grown by E-beam evaporation

Hiroshi Iwai, Kazuo Tsutsui, Yongshik Kim, 2005, Microelectron. J..

Laminated Mo/C Electrodes for 4H-SiC Schottky Barrier Diodes With Ideal Interface Characteristics

H. Iwai, H. Wakabayashi, K. Kakushima, 2016, IEEE Electron Device Letters.

Formation of GaAs-on-Insulator Structures on Si Substrates by Heteroepitaxial Growth of CaF2 and GaAs

Hee-Chul Lee, H. Ishiwara, S. Furukawa, 1986 .

Surface free energy modification of CaF2 by atomic-height island formation on heteroepitaxy of GaAs on CaF2

K. Tsutsui, K. Kawasaki, 1998 .

Crystallinity of heteroepitaxial GaAs layers grown on (Ca, Sr)F2/CaF2/Si(100) structures by molecular beam epitaxy

S. Furukawa, K. Tsutsui, Junko Asano, 1991 .

Influence of off‐oriented substrates on the crystallinity of (Ca,Sr)F2 layers grown on Si (100)

S. Furukawa, K. Tsutsui, Junko Asano, 1990 .

Growth of single domain GaAs/fluoride/Si structures

H. Ishiwara, S. Furukawa, K. Tsutsui, 1989 .

Heteroepitaxy of GaAs on CaF 2 /Si(111) By Surface Free Energy Modulation Method

K. Tsutsui, K. Kawasaki, 1998 .

In Situ Optical Observation and Control of Initial Stages of GaAs Growth On Caf 2 Surface Modified by Electron Beam Irradiation

K. Tsutsui, K. Kawasaki, 1996 .

Heteroepitaxial growth of (Ca,Sr)F2 on Si(100) substrates by molecular beam epitaxy

S. Furukawa, K. Tsutsui, Junko Asano, 1990 .

Influence of Off-Oriented Substrates on Heteroepitaxial Growth of (Ca, Sr)F2 Layers on Si (100)

S. Furukawa, K. Tsutsui, Junko Asano, 1989 .

Layered Structures Composed of Si, Ge, GaAs, and Fluorides

Hee-Chul Lee, H. Ishiwara, S. Furukawa, 1987 .

GaAs-on-Insulator Structure Prepared by Heteroepitaxy of Fluorides and GaAs

H. Ishiwara, S. Furukawa, K. Tsutsui, 1986 .

Lattice matching at elevated substrate temperature for growth of GaAs films with good electrical properties on CaxSr1−xF2/GaAs(100) structures

H. Ishiwara, S. Furukawa, K. Tsutsui, 1986 .

Observations of GaAs/CaF2 heterointerface formation by electron beam surface modification and its effects

K. Tsutsui, K. Kawasaki, 1997 .

ZnSe ionicity control layer inserted in GaAs/CaF2(111) interface

Mohammad Mustafa Sarinanto, K. Tsutsui, Y. Yamaguchi, 1997 .

Reduction of Point Defects in GaAs Films Grown on Fluoride/Si Structures by the 2-Step Growth Method

K. Tsutsui, Seijiro Furukawa Seijiro Furukawa, Atsuki Ono, 1991 .

Heteroepitaxy of GaAs on a modified CaF2 surface by an extremely low energy electron beam

K. Tsutsui, K. Miyasato, Sangheum Hwang, 1996 .

Control of rotational twins in a SOI-GaAs film grown on surface modified fluoride/Si(111)

S. Furukawa, K. Tsutsui, Atsuki Ono, 1992 .

A Novel Growth Method for High Quality GaAs/CaF 2 /Si(111) Structures by Using “Type-A” CaF 2 Film

S. Furukawa, K. Tsutsui, H. Mizukami, 1991 .

Study of thin ZnSe buffer layers for growth of GaAs on CaF2/Si(111) heterostructures

Mohammad Mustafa Sarinanto, K. Tsutsui, Y. Yamaguchi, 1998 .

Reliability of La-Silicate MOS Capacitors with Tungsten Carbide Gate Electrode for Scaled EOT

H. Iwai, N. Sugii, A. Nishiyama, 2013 .

Improvement of SiO2/4H-SiC Interface properties by post-metallization annealing

Hiroshi Iwai, Yiming Lei, Kuniyuki Kakushima, 2018, Microelectron. Reliab..

Passivation of SiO2/SiC interface with La2O3 capped oxidation

H. Iwai, S. Yamakawa, N. Sugii, 2014, 2014 IEEE Workshop on Wide Bandgap Power Devices and Applications.

High field-effect mobility with suppressed negative threshold voltage shift in 4H-SiC MOSFET with cerium oxide interfacial layer

H. Wakabayashi, K. Kakushima, T. Hoshii, 2021 .

Resistive switching properties of a thin SiO2 layer with CeOx buffer layer on n+ and p+ Si bottom electrodes

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2016, Microelectron. Reliab..

Vacancy-type defects in AlInN/AlN/GaN structures probed by monoenergetic positron beam

A. Uedono, K. Kakushima, T. Yoda, 2023, Journal of Applied Physics.

Interface and electrical properties of La-silicate for direct contact of high-k with silicon

H. Iwai, N. Sugii, K. Tachi, 2010 .

Ohmic contact between titanium and sputtered MoS2 films achieved by forming-gas annealing

H. Wakabayashi, K. Kakushima, K. Tsutsui, 2018, Japanese Journal of Applied Physics.

Growth of Thin Epitaxial CaxSr1-xF2/SrF2 Layers with Low Leakage Current on Ge Substrates

Keita Takahashi, K. Tsutsui, 2013 .

CdF2/CaF2 Resonant Tunneling Diode Fabricated on Si(111)

A. Izumi, K. Tsutsui, N. Sokolov, 1996 .

Growth of ultra-thin fluoride heterostructures on Ge(111) for quantum devices

Keita Takahashi, K. Tsutsui, T. Oshita, 2009 .

Heteroepitaxy of Cd-Rich CaxCd1-xF2 Alloy on Si Substrates and Its Application to Resonant Tunneling Diodes

H. Kambayashi, K. Tsutsui, So Watanabe, 2003 .

Fluoride Resonant Tunneling Diodes Co-integrated with Si-MOSFETs

K. Tsutsui, H. Sekine, T. Terayama, 2001 .

Normally-off sputtered-MoS2 nMISFETs with TiN top-gate electrode all defined by optical lithography for chip-level integration

H. Wakabayashi, A. Ogura, K. Kakushima, 2020, Japanese Journal of Applied Physics.

Crystalline structure of epitaxial CaxMg1−xF2 alloys on Si(100) and (111) substrates

K. Tsutsui, So Watanabe, M. Maeda, 2006 .

Electrical characterization of directly deposited La-Sc oxides complex for gate insulator application

H. Iwai, T. Hattori, N. Sugii, 2007 .

Atomically flat La-silicate/Si interface using tungsten carbide gate electrode with nano-sized grain

H. Iwai, N. Sugii, A. Nishiyama, 2014 .

Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2013, 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

EOT of 0.62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature

K. Kakushima, H. Iwai, T. Hattori, 2012, IEEE Transactions on Electron Devices.

Comprehensive x-ray photoelectron spectroscopy study on compositional gradient lanthanum silicate film

H. Iwai, T. Hattori, N. Sugii, 2009 .

Growth of heterostructure with abrupt interfaces by using thin CaF2 buffer layer

S. Novikov, K. Tsutsui, K. Kawabata, 1996 .

Reactive sputtering of ferroelectric AlScN films with H2 gas flow for endurance improvement

H. Wakabayashi, K. Kakushima, T. Hoshii, 2024, Japanese Journal of Applied Physics.

Lanthanum Oxide for Gate Dielectric Insulator

H. Iwai, T. Hattori, K. Kakushima, 2005, 2005 IEEE Conference on Electron Devices and Solid-State Circuits.

Characterization of flatband voltage roll-off and roll-up behavior in La2O3/silicate gate dielectric

H. Iwai, T. Hattori, N. Sugii, 2010 .