D. Piedra

发表

Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes

T. Palacios, A. Dadgar, Yuhao Zhang, 2017 .

Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors

F. Gao, T. Palacios, T. Fujishima, 2013, IEEE Transactions on Electron Devices.

GaN-on-Si Vertical Schottky and p-n Diodes

T. Palacios, T. Fujishima, Xu Zhang, 2014, IEEE Electron Device Letters.

Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation

Daniel Piedra, Xiang Gao, Tomás Palacios, 2017, IEEE Electron Device Letters.

Materials and processing issues in vertical GaN power electronics

Daniel Piedra, Nadim Chowdhury, Tomas Palacios, 2017 .

Novel GaN trench MIS barrier Schottky rectifiers with implanted field rings

A. Zubair, D. Piedra, Y. Zhang, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Native and process induced defects in GaN films grown on Si substrates probed using a monoenergetic positron beam

A. Uedono, Yu Cao, T. Palacios, 2014, 2014 International Workshop on Junction Technology (IWJT).

Vacancy clusters introduced by CF4-based plasma treatment in GaN probed with a monoenergetic positron beam

A. Uedono, T. Palacios, T. Fujishima, 2014 .

AlN metal–semiconductor field-effect transistors using Si-ion implantation

A. Uedono, T. Palacios, J. Lemettinen, 2017 .

Correlation of on‐wafer 400 V dynamic behavior and trap characteristics of GaN‐HEMTs

T. Palacios, T. Kikkawa, T. Imada, 2014 .

Simulation and Fabrication of GaN-Based Vertical and Lateral Normally-off Power Transistors by

B. Lu, T. Palacios, L. Kolodziejski, 2013 .

GaN Devices on a 200 mm Si Platform Targeting Heterogeneous Integration

K. Shepard, E. Sprogis, T. Palacios, 2017, IEEE Electron Device Letters.

GaN High-Electron Mobility Transistor Track-and-Hold Sampling Circuit With Over 100-dB Signal-to-Noise Ratio

Hae-Seung Lee, T. Palacios, SungWon Chung, 2016, IEEE Electron Device Letters.

Integration of a phase change material for junction-level cooling in GaN devices

T. Palacios, Min-Chul Sun, D. Piedra, 2012, 2012 28th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM).

Improved breakdown voltage and RF characteristics in AlGaN/GaN high-electron-mobility transistors achieved by slant field plates

T. Otsuji, T. Palacios, T. Suemitsu, 2014 .

Annealing behaviors of vacancy-type defects near interfaces between metal contacts and GaN probed using a monoenergetic positron beam

A. Uedono, T. Palacios, T. Fujishima, 2014 .

Advanced power electronic devices based on Gallium Nitride (GaN)

F. Gao, L. Xia, B. Lu, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

A Technology Overview of the PowerChip Development Program

Charles R. Sullivan, Jun Chen, Jeffrey H. Lang, 2013, IEEE Transactions on Power Electronics.

3000-V 4.3-$\hbox{m}\Omega \cdot \hbox{cm}^{2}$ InAlN/GaN MOSHEMTs With AlGaN Back Barrier

Xiang Gao, Hyung-Seok Lee, D. Piedra, 2012, IEEE Electron Device Letters.

The 2018 GaN power electronics roadmap

Alex Q. Huang, Yuhao Zhang, Xu Li, 2018, Journal of Physics D: Applied Physics.

Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes

Daniel Piedra, Tomas Palacios, Puneet Srivastava, 2015, IEEE Transactions on Electron Devices.

Large-Area 1.2-kV GaN Vertical Power FinFETs With a Record Switching Figure of Merit

Daniel Piedra, Xiang Gao, Ahmad Zubair, 2018, IEEE Electron Device Letters.

Trench formation and corner rounding in vertical GaN power devices

Daniel Piedra, Xiang Gao, Tomas Palacios, 2017 .

Comparative Breakdown Study of Mesa- and Ion-Implantation-Isolated AlGaN/GaN High-Electron-Mobility Transistors on Si Substrate

Daniel Piedra, Hyung-Seok Lee, Tomas Palacios, 2012 .

High-Performance 500 V Quasi- and Fully-Vertical GaN-on-Si pn Diodes

Daniel Piedra, Tomás Palacios, Armin Dadgar, 2017, IEEE Electron Device Letters.

Large signal linearity enhancement of AlGaN/GaN high electron mobility transistors by device-level Vt engineering for transconductance compensation

Daniel Piedra, Tomás Palacios, Ujwal Radhakrishna, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

High voltage GaN HEMT compact model: Experimental verification, field plate optimization and charge trapping

Daniel Piedra, Ujwal Radhakrishna, Dimitri Antoniadis, 2013, 2013 IEEE International Electron Devices Meeting.

1200 V GaN vertical fin power field-effect transistors

K. Shepard, T. Palacios, J. Hu, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

Impact of Al2O3 Passivation on AlGaN/GaN Nanoribbon High-Electron-Mobility Transistors

T. Palacios, S. Gradečak, S. Joglekar, 2016, IEEE Transactions on Electron Devices.

GaN-Based Nanowire Transistors

B. Lu, T. Palacios, E. Matioli, 2017 .

Formation of low resistance ohmic contacts in GaN-based high electron mobility transistors with BCl3 surface plasma treatment

Daniel Piedra, Hyung-Seok Lee, Tomas Palacios, 2013 .

Hybrid CMOS/GaN 40-MHz Maximum 20-V Input DC–DC Multiphase Buck Converter

Kenneth L. Shepard, Daniel Piedra, Tomás Palacios, 2017, IEEE Journal of Solid-State Circuits.

GaN power electronics

Daniel Piedra, Bin Lu, Tomas Palacios, 2010, The Eighth International Conference on Advanced Semiconductor Devices and Microsystems.