B. Bakeroot

发表

Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices

S. Decoutere, M. Meneghini, G. Meneghesso, 2020, Applied Physics Express.

An experimental approach for bias-dependent drain series resistances evaluation in asymmetric HV MOSFETs

M. Vermandel, A. Ionescu, C. Anghel, 2001, 31st European Solid-State Device Research Conference.

Analysis and Modeling of Lateral Non-Uniform Doping in High-Voltage MOSFETs

F. Krummenacher, Y. Chauhan, M. Declercq, 2006, 2006 International Electron Devices Meeting.

Compact Modeling of Lateral Nonuniform Doping in High-Voltage MOSFETs

F. Krummenacher, Y. Chauhan, M. Declercq, 2007, IEEE Transactions on Electron Devices.

Analysis of the Gate Capacitance–Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures

S. Decoutere, N. Ronchi, Tian-Li Wu, 2017, IEEE Electron Device Letters.

Gate Reliability of p-GaN HEMT With Gate Metal Retraction

S. Decoutere, A. Tallarico, C. Fiegna, 2019, IEEE Transactions on Electron Devices.

Electrical characterisation of high voltage MOSFETs using MESDRIFT

R. Gillon, B. Bakeroot, C. Anghel, 2003, 2003 International Semiconductor Conference. CAS 2003 Proceedings (IEEE Cat. No.03TH8676).

Reliability of p-GaN Gate HEMTs in Reverse Conduction

S. Decoutere, G. Groeseneken, K. Jacobs, 2021, IEEE Transactions on Electron Devices.

Au-Free AlGaN/GaN Power Diode on 8-in Si Substrate With Gated Edge Termination

Dirk Wellekens, Stefaan Decoutere, Brice De Jaeger, 2013, IEEE Electron Device Letters.

Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization

S. Decoutere, M. Meneghini, G. Meneghesso, 2021, Materials.

Positive bias temperature instability evaluation in fully recessed gate GaN MIS-FETs

Guido Groeseneken, Jacopo Franco, Denis Marcon, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs

Guido Groeseneken, Jacopo Franco, Denis Marcon, 2016, IEEE Transactions on Electron Devices.

Reliability Improvements in AlGaN/GaN Schottky Barrier Diodes With a Gated Edge Termination

S. Decoutere, B. de Jaeger, L. Trojman, 2018, IEEE Transactions on Electron Devices.

Impact of Structural and Process Variations on the Time-Dependent OFF-State Breakdown of p-GaN Power HEMTs

S. Decoutere, A. Tallarico, N. Posthuma, 2021, IEEE Transactions on Device and Materials Reliability.

Modeling of the Vertical Leakage Current in AlN/Si Heterojunctions for GaN Power Applications

S. Decoutere, M. Meneghini, G. Meneghesso, 2020, IEEE Transactions on Electron Devices.

The Impact of Ti/Al Contacts on AlGaN/GaN HEMT Vertical Leakage and Breakdown

S. Decoutere, M. Uren, Martin Kuball, 2018, IEEE Electron Device Letters.

Si Trench Around Drain (STAD) technology of GaN-DHFETs on Si substrate for boosting power performance

S. Decoutere, I. De Wolf, R. Mertens, 2011, 2011 International Electron Devices Meeting.

Investigation on Carrier Transport Through AlN Nucleation Layer From Differently Doped Si(111) Substrates

S. Decoutere, G. Groeseneken, M. Van Hove, 2018, IEEE Transactions on Electron Devices.

Reliability in GaN-based devices for power applications

S. Decoutere, B. de Jaeger, L. Trojman, 2018, 2018 IEEE Third Ecuador Technical Chapters Meeting (ETCM).

Exploration of gate trench module for vertical GaN devices

S. Decoutere, A. Neviani, M. Meneghini, 2020, 2104.00939.

Influence of GaN- and Si3N4-Passivation Layers on the Performance of AlGaN/GaN Diodes With a Gated Edge Termination

S. Decoutere, B. de Jaeger, L. Trojman, 2019, IEEE Transactions on Electron Devices.

Investigation of constant voltage off-state stress on Au-free AlGaN/GaN Schottky barrier diodes

S. Decoutere, G. Groeseneken, N. Ronchi, 2015 .

Defect Characterization in High‐Electron‐Mobility Transistors with Regrown p‐GaN Gate by Low‐Frequency Noise and Deep‐Level Transient Spectroscopy

S. Decoutere, E. Simoen, B. de Jaeger, 2021, physica status solidi (a).

Demonstration of Schottky barrier diode integrated in 200 V power p-GaN HEMTs technology with robust stability

S. Decoutere, B. de Jaeger, D. Wellekens, 2022, Microelectronics Reliability.

Buffer Vertical Leakage Mechanism and Reliability of 200-mm GaN-on-SOI

S. Decoutere, G. Groeseneken, Weiming Guo, 2019, IEEE Transactions on Electron Devices.

Device breakdown optimization of AhOs/GaN MISFETs

S. Decoutere, B. de Jaeger, D. Wellekens, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

Statistical Analysis of the Impact of Anode Recess on the Electrical Characteristics of AlGaN/GaN Schottky Diodes With Gated Edge Termination

S. Decoutere, A. Tallarico, G. Groeseneken, 2016, IEEE Transactions on Electron Devices.

Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors

M. Meneghini, G. Meneghesso, E. Zanoni, 2018, IEEE Transactions on Electron Devices.

Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p+n−n Diodes: The Road to Reliable Vertical MOSFETs

S. Decoutere, A. Gerosa, M. Meneghini, 2021, Micromachines.

Leakage and trapping characteristics in Au‐free AlGaN/GaN Schottky barrier diodes fabricated on C‐doped buffer layers

S. Decoutere, G. Groeseneken, N. Ronchi, 2016 .

Observation of Dynamic V_TH of p-GaN Gate HEMTs by Fast Sweeping Characterization

S. Decoutere, G. Groeseneken, N. Posthuma, 2020 .

Surface-Potential-Based Compact Model for the Gate Current of p-GaN Gate HEMTs

S. Decoutere, Lingling Sun, S. You, 2020, IEEE Transactions on Electron Devices.

Observation of Dynamic VTH of p-GaN Gate HEMTs by Fast Sweeping Characterization

S. Decoutere, G. Groeseneken, N. Posthuma, 2020, IEEE Electron Device Letters.

Optimising High-Voltage Devices in a Smart Power Technology, using the RESurF-effect and TCAD

M. Vermandel, J. Doutreloigne, B. Bakeroot, 2002 .

Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability

S. Decoutere, M. Meneghini, G. Meneghesso, 2020, Materials.

Low Field Vertical Charge Transport in the Channel and Buffer Layers of GaN-on-Si High Electron Mobility Transistors

S. Decoutere, M. Uren, Martin Kuball, 2020, IEEE Electron Device Letters.

The impact of leakage on dynamic RON in GaN-on-Si HEMTs

S. Decoutere, M. Uren, Martin Kuball, 2020 .

Trading Off between Threshold Voltage and Subthreshold Slope in AlGaN/GaN HEMTs with a p-GaN Gate

S. Decoutere, D. Wellekens, N. Posthuma, 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).

An Ultrafast and Latch-Up Free Lateral IGBT with Hole Diverter for Junction-Isolated Technologies

J. Doutreloigne, P. Moens, B. Bakeroot, 2007, Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's.

The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors

G. Meneghesso, M. Meneghini, S. Gerardin, 2019, IEEE Transactions on Electron Devices.

Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics

Guido Groeseneken, Denis Marcon, Stefaan Decoutere, 2015 .

Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron

Peter Moens, Matteo Meneghini, Benoit Bakeroot, 2017, 2017 47th European Solid-State Device Research Conference (ESSDERC).

Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs

Guido Groeseneken, Denis Marcon, Stefaan Decoutere, 2015, 2015 IEEE International Reliability Physics Symposium.

The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs

S. Decoutere, C. Fiegna, E. Sangiorgi, 2022, IEEE Electron Device Letters.

TCAD-based design and verification of the components of a 200 V GaN-IC platform

S. Decoutere, O. Syshchyk, Pavan Vudumula, 2022, Solid-State Electronics.

Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition

S. Decoutere, A. Tallarico, C. Fiegna, 2022, 2022 IEEE International Reliability Physics Symposium (IRPS).

Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability

Enrico Sangiorgi, G. Meneghesso, M. Meneghini, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

Failure mode for p-GaN gates under forward gate stress with varying Mg concentration

S. Decoutere, C. Fiegna, B. Bakeroot, 2017, 2017 IEEE International Reliability Physics Symposium (IRPS).

Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

Guido Groeseneken, Niels Posthuma, Denis Marcon, 2015, IEEE Electron Device Letters.

Correlating Structural and Electrical Characteristics of Threading Dislocations in GaN -on- S. Decoutere, K. Geens, B. Bakeroot, 2023, Physical Review Applied.

Epitaxial buffer structures grown on 200 mm engineering substrates for 1200 V E-mode HEMT application

S. Decoutere, D. Wellekens, R. Langer, 2022, Applied Physics Letters.

Integration of 650 V GaN Power ICs on 200 mm Engineered Substrates

S. Decoutere, G. Groeseneken, D. Wellekens, 2020, IEEE Transactions on Semiconductor Manufacturing.

Optimization of the source field-plate design for low dynamic RDS-ON dispersion of AlGaN/GaN MIS-HEMTs

S. Decoutere, N. Ronchi, S. Stoffels, 2016, 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS).

Compact Modeling of Nonideal Trapping/Detrapping Processes in GaN Power Devices

S. Decoutere, A. Bevilacqua, A. Neviani, 2022, IEEE Transactions on Electron Devices.

Scalable general high voltage MOSFET model including quasi-saturation and self-heating effects

Adrian M. Ionescu, Abhinav Sharma, Yogesh Singh Chauhan, 2006 .

High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs

S. Decoutere, C. Fiegna, N. Posthuma, 2021, IEEE Transactions on Electron Devices.

Analytical Model for the Threshold Voltage of ${p}$ -(Al)GaN High-Electron-Mobility Transistors

Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot, 2018, IEEE Transactions on Electron Devices.

An EKV-based high voltage MOSFET model with improved mobility and drift model

Adrian M. Ionescu, Francois Krummenacher, Yogesh Singh Chauhan, 2007 .

Study and characterization of GaN MOS capacitors: Planar vs trench topographies

S. Decoutere, G. Meneghesso, C. de Santi, 2022, Applied Physics Letters.

Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs

S. Decoutere, M. Meneghini, G. Meneghesso, 2022, IEEE International Reliability Physics Symposium.

Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors

S. Decoutere, G. Meneghesso, F. Rampazzo, 2022, Microelectronics Reliability.

Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate

Guido Groeseneken, Marleen Van Hove, Stefaan Decoutere, 2016, IEEE Transactions on Electron Devices.

Investigating the Current Collapse Mechanisms of p-GaN Gate HEMTs by Different Passivation Dielectrics

S. Decoutere, G. Groeseneken, N. Posthuma, 2021, IEEE Transactions on Power Electronics.

Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Guido Groeseneken, Jacopo Franco, Denis Marcon, 2015 .

Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests

Guido Groeseneken, Ben Kaczer, Denis Marcon, 2017, IEEE Electron Device Letters.

On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors

Stefaan Decoutere, Benoit Bakeroot, Steve Stoffels, 2014 .

GaN-on-SOI: Monolithically Integrated All-GaN ICs for Power Conversion

S. Decoutere, D. Wellekens, B. Bakeroot, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate

Guido Groeseneken, Denis Marcon, Marleen Van Hove, 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Cross-sectional SEM-EBIC analysis of semi-vertical GaN power diodes

M. Borga, K. Geens, B. Bakeroot, 2022, International Conference on Advanced Semiconductor Devices and Microsystems.

Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs

S. Decoutere, A. Neviani, G. Meneghesso, 2022, Microelectronics Reliability.

Threshold Voltage Instability Mechanisms in p-GaN Gate AlGaN/GaN HEMTs

M. Meneghini, G. Meneghesso, P. Moens, 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).

On the origin of the leakage current in p-gate AlGaN/GaN HEMTs

Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs

S. Decoutere, C. Fiegna, E. Sangiorgi, 2022, IEEE Transactions on Electron Devices.

Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs

S. Decoutere, D. Wellekens, Tian-Li Wu, 2023, IEEE Transactions on Electron Devices.

Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode

Guido Groeseneken, Stefaan Decoutere, Benoit Bakeroot, 2015 .

Ultra-Fast Positive Gate Bias Stress (<100ns) to Understand the Hole Injection in Power p-GaN HEMTs

S. Decoutere, D. Wellekens, Tian-Li Wu, 2023, 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

High Threshold Voltage Enhancement-Mode Regrown p-GaN Gate HEMTs With a Robust Forward Time-Dependent Gate Breakdown Stability

S. Decoutere, B. de Jaeger, D. Wellekens, 2022, IEEE Electron Device Letters.

A New Charge based Compact Model for Lateral Asymmetric MOSFET and its application to High Voltage MOSFET Modeling

Adrian M. Ionescu, François Krummenacher, Michel J. Declercq, 2007, 20th International Conference on VLSI Design held jointly with 6th International Conference on Embedded Systems (VLSID'07).

Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processing

M. Borga, K. Geens, B. Bakeroot, 2023, Scientific reports.