A. Corrion

发表

1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance

K. Boutros, R. Chu, B. Hughes, 2011, IEEE Electron Device Letters.

W-Band GaN MMIC with 842 mW output power at 88 GHz

P. Kangaslahti, A. Fung, L. Samoska, 2010, 2010 IEEE MTT-S International Microwave Symposium.

Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications

Keisuke Shinohara, Thomas C. Oh, Miroslav Micovic, 2013, IEEE Transactions on Electron Devices.

Deep-recessed GaN HEMTs using selective etch technology exhibiting high microwave performance without surface passivation

S. Denbaars, N. Fichtenbaum, L. McCarthy, 2007, 2007 IEEE/MTT-S International Microwave Symposium.

GaN Technology for E, W and G-Band Applications

H. P. Moyer, A. Fung, A. Margomenos, 2014, 2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

High‐speed graded‐channel AlGaN/GaN HEMTs with power added efficiency >70% at 30 GHz

J. Moon, P. Fay, E. Arkun, 2020, Electronics Letters.

Monolithic Integration of Enhancement- and Depletion-Mode AlN/GaN/AlGaN DHFETs by Selective MBE Regrowth

M. Micovic, K. Shinohara, P. Hashimoto, 2011, IEEE Transactions on Electron Devices.

Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature

F. Recht, L. McCarthy, U. Mishra, 2006, IEEE Electron Device Letters.

AlGaN/GaN HEMTs with Large Angle Implanted Nonalloyed Ohmic Contacts

F. Recht, L. McCarthy, U. Mishra, 2007, 2007 65th Annual Device Research Conference.

Non-polar GaN film growth on (0 1 0) gallium oxide substrate by metal organic chemical vapor deposition

R. Chu, Yu Cao, A. Corrion, 2017 .

High-speed Graded-channel GaN HEMTs with Linearity and Efficiency

J. Moon, P. Fay, E. Arkun, 2020, 2020 IEEE/MTT-S International Microwave Symposium (IMS).

Wafer-level packaging method incorporating embedded thermal management for GaN-based RF front-ends

M. Micovic, K. Shinohara, E. Prophet, 2014, Fourteenth Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm).

Power Performance of AlGaN/GaN HEMTs Grown on SiC by Ammonia-MBE at 4 and 10 GHz

Chang Soo Suh, R. Chu, F. Recht, 2007, IEEE Electron Device Letters.

Surface Treatment for Leakage Reduction in AlGaN/GaN HEMTs

N. Fichtenbaum, U. Mishra, J. Speck, 2007, 2007 65th Annual Device Research Conference.

Comparison of deep level incorporation in ammonia and rf‐plasma assisted molecular beam epitaxy n‐GaN films

Steven A. Ringel, Christiane Poblenz, James S. Speck, 2008 .

Deep level optical and thermal spectroscopy of traps in n-GaN grown by ammonia molecular beam epitaxy

Steven A. Ringel, Christiane Poblenz, James S. Speck, 2008 .

Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors

Christiane Poblenz, James S. Speck, Feng Wu, 2008 .

Growth regimes during homoepitaxial growth of GaN by ammonia molecular beam epitaxy

J. Speck, Feng Wu, A. Corrion, 2012 .

Growth of Fe-doped GaN by RF plasma-assisted molecular beam epitaxy

J. Speck, T. Mates, C. Poblenz, 2006 .

Ultrahigh-Speed GaN High-Electron-Mobility Transistors With $f_{T}/f_{\mathrm {max}}$ of 454/444 GHz

Keisuke Shinohara, Andrea Corrion, Miroslav Micovic, 2015, IEEE Electron Device Letters.

High-Speed AlN/GaN MOS-HFETs With Scaled ALD {Al}_{2}{O}_{3} Gate Insulators

M. Micovic, K. Shinohara, P. Hashimoto, 2011 .

Characterization of majority and minority carrier deep levels in p-type GaN:Mg grown by molecular beam epitaxy using deep level optical spectroscopy

Steven A. Ringel, Christiane Poblenz, James S. Speck, 2008 .

Self-aligned-gate GaN-HEMTs with heavily-doped n+-GaN ohmic contacts to 2DEG

A. Schmitz, K. Shinohara, M. Micovic, 2012, 2012 International Electron Devices Meeting.

Unpassivated high power deeply recessed GaN HEMTs with fluorine-plasma surface treatment

S. Denbaars, T. Palacios, N. Fichtenbaum, 2006, IEEE Electron Device Letters.

Novel Asymmetric Slant Field Plate Technology for High-Speed Low-Dynamic Ron E/D-mode GaN HEMTs

M. Micovic, K. Shinohara, A. Schmitz, 2017, IEEE Electron Device Letters.

Ultrahigh-Speed GaN High-Electron-Mobility Transistors With f T / f max of 454/444 GHz

Adele E. Schmitz, Keisuke Shinohara, Andrea Corrion, 2015 .

220GHz fT and 400GHz fmax in 40-nm GaN DH-HEMTs with re-grown ohmic

A. Fung, D. Wheeler, P. J. Willadsen, 2010, 2010 International Electron Devices Meeting.

Deeply-scaled self-aligned-gate GaN DH-HEMTs with ultrahigh cutoff frequency

A. Schmitz, K. Shinohara, M. Micovic, 2011, 2011 International Electron Devices Meeting.

Electron Velocity Enhancement in Laterally Scaled GaN DH-HEMTs With $f_{T}$ of 260 GHz

P. M. Asbeck, P. J. Willadsen, A. Schmitz, 2011, IEEE Electron Device Letters.

Vertically scaled GaN/AlN DH-HEMTs with regrown n+GaN ohmic contacts by MBE

M. Micovic, K. Shinohara, P. Hashimoto, 2010, 68th Device Research Conference.

High-Speed 501-Stage DCFL GaN Ring Oscillator Circuits

A. Schmitz, K. Shinohara, M. Micovic, 2013, IEEE Electron Device Letters.

High-Speed, Enhancement-Mode GaN Power Switch With Regrown ${\rm n}+$ GaN Ohmic Contacts and Staircase Field Plates

M. Micovic, K. Shinohara, R. Chu, 2013, IEEE Electron Device Letters.

360 GHz fMAX Graded-Channel AlGaN/GaN HEMTs for mmW Low-Noise Applications

J. Moon, P. Fay, E. Arkun, 2020, IEEE Electron Device Letters.

Novel High-speed Linear GaN Technology with High Efficiency

Peter Chen, Andrea Corrion, Jeong-sun Moon, 2019, 2019 IEEE MTT-S International Microwave Symposium (IMS).

High-speed Linear GaN Technology with a record Efficiency in Ka-band

J. Moon, E. Arkun, Peter Chen, 2019, 2019 14th European Microwave Integrated Circuits Conference (EuMIC).

Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy

Christiane Poblenz, Umesh K. Mishra, Patrick Waltereit, 2006, IEICE Trans. Electron..