S. Khalil

Normally-Off GaN-on-Si transistors enabling nanosecond power switching at one kilowatt

K. Boutros, R. Chu, B. Hughes, 2013, 71st Device Research Conference.

Dynamics of hole injection from p-GaN drain of a hybrid drain embedded GIT

M. Imam, R. Tadikonda, A. Charles, 2021 .

Improvement of the dynamic on-resistance characteristics of GaN-on-Si power transistors with a sloped field-plate

K. Boutros, R. Chu, D. Zehnder, 2014, 72nd Device Research Conference.

Trap-related parametric shifts under DC bias and switched operation life stress in power AlGaN/GaN HEMTs

M. Marinella, S. Atcitty, K. Boutros, 2014, 2014 IEEE International Reliability Physics Symposium.

Reverse bias lifetime reliability assessments of HV GaN power device

Hari Kannan, Alain Charles, Tim McDonald, 2017, 2017 IEEE International Reliability Physics Symposium (IRPS).

Normally-off GaN-on-Si multi-chip module boost converter with 96% efficiency and low gate and drain overshoot

Rongming Chu, Raghav Khanna, Marcel Musni, 2014, 2014 IEEE Applied Power Electronics Conference and Exposition - APEC 2014.

HV GaN reliability and status

Eric Persson, Tim McDonald, Sameh G. Khalil, 2015, 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA).