S. Nagai

Present and Future of GaN Power Devices

D. Ueda, T. Ueda, T. Morita, 2014 .

8300V Blocking Voltage AlGaN/GaN Power HFET with Thick Poly-AlN Passivation

H. Matsuo, Y. Uemoto, S. Nagai, 2007, 2007 IEEE International Electron Devices Meeting.

12.5-gbps operation of 850-nm vertical-cavity surface-emitting lasers with reduced parasitic capacitance by BCB planarization technique

T. Ueda, Shuichi Nagai, T. Ueda, 2006, IEEE Journal of Quantum Electronics.

Low-Pressure Direct-Liquid-Cooling Technology for GaN Power Transistors

Y. Uemoto, D. Ueda, M. Yanagihara, 2011 .

GaN Power Electron Devices

H. Ishida, Y. Uemoto, D. Ueda, 2011 .

Extremely low on-resistance enhancement-mode GaN-based HFET using Ge-doped regrowth technique

D. Ueda, S. Nagai, N. Otsuka, 2014, 2014 IEEE International Electron Devices Meeting.