Anchal Agarwal

发表

First report of scaling a normally-off in-situ oxide, GaN interlayer based vertical trench MOSFET (OG-FET)

U. Mishra, S. Keller, D. Ji, 2017, 2017 75th Annual Device Research Conference (DRC).

In Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) on Bulk GaN substrates

U. Mishra, S. Keller, C. Gupta, 2017, IEEE Electron Device Letters.

Normally OFF Trench CAVET With Active Mg-Doped GaN as Current Blocking Layer

S. Keller, D. Ji, Anchal Agarwal, 2017, IEEE Transactions on Electron Devices.

Investigation of Mg δ-doping for low resistance N-polar p-GaN films grown at reduced temperatures by MOCVD

S. Denbaars, S. Nakamura, U. Mishra, 2018, Semiconductor Science and Technology.

Schottky Junction Vertical Channel GaN Static Induction Transistor with a Sub‐Micrometer Fin Width

Jaeyi Chun, Anchal Agarwal, Wenwen Li, 2018, Advanced Electronic Materials.

Improved Dynamic RON of GaN Vertical Trench MOSFETs (OG-FETs) Using TMAH Wet Etch

U. Mishra, S. Keller, D. Bisi, 2018, IEEE Electron Device Letters.

First Demonstration of AlSiO as Gate Dielectric in GaN FETs; Applied to a High Performance OG-FET

U. Mishra, S. Keller, C. Gupta, 2017, IEEE Electron Device Letters.

Impact of Trench Dimensions on the Device Performance of GaN Vertical Trench MOSFETs

U. Mishra, S. Keller, D. Ji, 2017, IEEE Electron Device Letters.

First demonstration of RF N-polar GaN MIS-HEMTs grown on bulk GaN using PAMBE

U. Mishra, S. Keller, E. Ahmadi, 2019, Semiconductor Science and Technology.

Suppression of Mg propagation into subsequent layers grown by MOCVD

U. Mishra, S. Keller, T. Mates, 2017 .

OG-FET: An In-Situ ${O}$ xide, ${G}$ aN Interlayer-Based Vertical Trench MOSFET

U. Mishra, S. Keller, C. Gupta, 2016, IEEE Electron Device Letters.

1 kV field plated in-situ oxide, GaN interlayer based vertical trench MOSFET (OG-FET)

U. Mishra, S. Keller, C. Gupta, 2017, 2017 75th Annual Device Research Conference (DRC).

Comparing electrical performance of GaN trench-gate MOSFETs with a-plane and m-plane sidewall channels

U. Mishra, S. Keller, C. Gupta, 2016 .

A novel device design to lower the on-resistance in GaN trench MOSFETs

U. Mishra, S. Keller, C. Gupta, 2016, 2016 74th Annual Device Research Conference (DRC).

Abrupt GaN/p-GaN:Mg junctions grown via metalorganic chemical vapor deposition

U. Mishra, S. Keller, T. Mates, 2017 .

Maskless regrowth of GaN for trenched devices by MOCVD

U. Mishra, S. Keller, C. Gupta, 2017 .

Controlled low Si doping and high breakdown voltages in GaN on sapphire grown by MOCVD

U. Mishra, S. Keller, C. Gupta, 2016 .

Implementing "Quick add" feature in calendar application using Flex and Natural language processing

Anchal Agarwal, Narina Thakur, Ela Rathee, 2014 .

Electro-Thermal Investigation of GaN Vertical Trench MOSFETs

D. Ji, Sukwon Choi, B. Chatterjee, 2021, IEEE Electron Device Letters.

Demonstration of GaN Current Aperture Vertical Electron Transistors With Aperture Region Formed by Ion Implantation

Dong Ji, Srabanti Chowdhury, Stacia Keller, 2018, IEEE Transactions on Electron Devices.

Large-Area In-Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET)

Umesh K. Mishra, Chirag Gupta, Dong Ji, 2018, IEEE Electron Device Letters.

Comparative study of CAVET with dielectric and p-GaN gate and Mg ion-implanted current blocking layer

Saptarshi Mandal, Srabanti Chowdhury, Stacia Keller, 2017, Optical Engineering + Applications.

Demonstrating >1.4 kV OG-FET performance with a novel double field-plated geometry and the successful scaling of large-area devices

Umesh K. Mishra, Chirag Gupta, Dong Ji, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).