Zhaofu Zhang

发表

Dynamic $R_{\mathrm {ON}}$ of GaN-on-Si Lateral Power Devices With a Floating Substrate Termination

Kevin J. Chen, Jin Wei, M. Hua, 2017, IEEE Electron Device Letters.

High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure

Kevin J. Chen, Sen Huang, Chao Zhao, 2016, IEEE Electron Device Letters.

Low On-Resistance Normally-Off GaN Double-Channel Metal–Oxide–Semiconductor High-Electron-Mobility Transistor

Kevin J. Chen, Jin Wei, C. Liu, 2015, IEEE Electron Device Letters.

High-speed, high-reliability GaN power device with integrated gate driver

Kevin J. Chen, H. Tuan, A. Kalnitsky, 2018, 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Reverse-Conducting Normally-OFF Double-Channel AlGaN/GaN Power Transistor With Interdigital Built-in Schottky Barrier Diode

Kevin J. Chen, Jin Wei, Zheyang Zheng, 2019, IEEE Transactions on Electron Devices.

Enhancement-mode GaN double-channel MOS-HEMT with low on-resistance and robust gate recess

Jin Wei, Cheng Liu, Xi Tang, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

An interdigitated GaN MIS-HEMT/SBD normally-off power switching device with low ON-resistance and low reverse conduction loss

Kevin J. Chen, Jin Wei, Zheyang Zheng, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

Reverse-Blocking Normally-OFF GaN Double-Channel MOS-HEMT With Low Reverse Leakage Current and Low ON-State Resistance

Kevin J. Chen, Jin Wei, Zheyang Zheng, 2018, IEEE Electron Device Letters.

650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode

Kevin J. Chen, Jin Wei, Zheyang Zheng, 2018, IEEE Electron Device Letters.

A remarkable thermosensitive hydrogel cross-linked by two inorganic nanoparticles with opposite charges.

Geoffrey I N Waterhouse, Linfeng Dong, Zhaofu Zhang, 2019, Journal of colloid and interface science.

Interfacial bonding and electronic structure of GaN/GaAs interface: A first-principles study

Changhong Wang, Hui Liu, Weichao Wang, 2015 .

Poly( N ‐isopropylacrylamide)/mesoporous silica thermosensitive composite hydrogels for drug loading and release

Geoffrey I N Waterhouse, Zhaofu Zhang, Shuo Wang, 2020, Journal of Applied Polymer Science.

High-performance fully-recessed enhancement-mode GaN MIS-FETs with crystalline oxide interlayer

Kevin J. Chen, Jin Wei, Qilong Bao, 2017, 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).

Effect of applied stress on creep properties of Sanicro 25 welded joint made with a composition-matched weld filler metal

H. Jing, Lianyong Xu, Yongdian Han, 2020, Journal of Materials Science.

Impact of substrate termination on dynamic performance of GaN-on-Si lateral power devices

Kevin J. Chen, Jin Wei, M. Hua, 2017, 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).

Microstructural tailoring and its influence on oxidation resistance of carbon fiber-reinforced C-SiC matrix composites

M. Lei, Zhaofu Zhang, J. Sha, 2019, Ceramics International.

2D materials as semiconducting gate for field-effect transistors with inherent over-voltage protection and boosted ON-current

Kevin J. Chen, Jin Wei, Zheyang Zheng, 2019, npj 2D Materials and Applications.

Impact of carrier injections on the threshold voltage in p-GaN gate AlGaN/GaN power HEMTs

H. A. Moghadam, S. Dimitrijev, N. Nguyen, 2019, Applied Physics Express.

Gate-Recessed Normally-OFF GaN MOSHEMT With Improved Channel Mobility and Dynamic Performance Using AlN/Si3N4 as Passivation and Post Gate-Recess Channel Protection Layers

Kevin J. Chen, C. Wen, Wengang Wu, 2017, IEEE Electron Device Letters.

Photon emission and current-collapse suppression of AlGaN/GaN field-effect transistors with photonic–ohmic drain at high temperatures

Kevin J. Chen, Jin Wei, Baikui Li, 2018, Applied Physics Express.

Atomic-scale identification of crystalline GaON nanophase for enhanced GaN MIS-FET channel

Kevin J. Chen, Zheyang Zheng, M. Hua, 2019, Applied Physics Letters.

Charge-Modulated Schottky Barrier Lowering Effect in GaN Double-Channel Lateral Power SBDs with Gated Anode

Kevin J. Chen, Jin Wei, Yuru Wang, 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Performance and VTH Stability in E-Mode GaN Fully Recessed MIS-FETs and Partially Recessed MIS-HEMTs With LPCVD-SiNx/PECVD-SiNx Gate Dielectric Stack

Kevin J. Chen, M. Hua, Zhaofu Zhang, 2018, IEEE Transactions on Electron Devices.

Highly anisotropic electronic and mechanical properties of monolayer and bilayer As2S3

Jian-Sheng Wang, Zhaofu Zhang, B. Lv, 2020, 2008.07174.

Performance and Stability of Enhancement-mode Fully-recessed GaN MIS-FETs and Partially-recessed MIS-HEMTs with PECVD-SiNx/LPCVD-SiNx Gate Dielectric

Kevin J. Chen, M. Hua, Gaofei Tang, 2018 .

Schottky barrier height at metal/ZnO interface: A first-principles study

J. Robertson, Yuzheng Guo, Zhaofu Zhang, 2019, Microelectronic Engineering.

Electronic structure of amorphous copper iodide: A p -type transparent semiconductor

J. Robertson, Yuzheng Guo, Zhaofu Zhang, 2020, 2005.01205.

Revealing the Oxygen Reduction/Evolution Reaction Activity Origin of Carbon-Nitride-Related Single-Atom Catalysts: Quantum Chemistry in Artificial Intelligence

Yuzheng Guo, Xuhao Wan, Zhaofu Zhang, 2022, SSRN Electronic Journal.

Machine-learning-assisted discovery of highly efficient high-entropy alloy catalysts for the oxygen reduction reaction

Wei Yu, Yuzheng Guo, Xuhao Wan, 2022, Patterns.

Revealing the oxygen reduction reaction activity origin of single atoms supported on g-C3N4 monolayers: a first-principles study

Yuzheng Guo, Zhaofu Zhang, Yuanshuang Liu, 2020, Journal of Materials Chemistry A.

In Situ Resonant Raman Spectroscopy to Monitor the Surface Functionalization of MoS2 and WSe2 for High-k Integration: A First-Principles Study.

Kevin J. Chen, Zhaofu Zhang, Qingkai Qian, 2018, Langmuir : the ACS journal of surfaces and colloids.

Ultrathin ferrite nanosheets for room-temperature two-dimensional magnetic semiconductors

Ruiqing Cheng, Y. Wen, Yuzheng Guo, 2022, Nature Communications.

Hole-Induced Threshold Voltage Shift Under Reverse-Bias Stress in E-Mode GaN MIS-FET

Kevin J. Chen, Jin Wei, Qilong Bao, 2018, IEEE Transactions on Electron Devices.

p-Type Semiconduction in Oxides with Cation Lone Pairs

J. Robertson, Yuzheng Guo, Zhaofu Zhang, 2022, Chemistry of Materials.

Doping limits in p-type oxide semiconductors

J. Robertson, Zhaofu Zhang, 2021, MRS Bulletin.

Electronic properties and tunability of the hexagonal SiGe alloys

J. Robertson, Yuzheng Guo, Zhaofu Zhang, 2021 .

Electronic properties of CaF2 bulk and interfaces

J. Robertson, Yuzheng Guo, Zhaofu Zhang, 2022, Journal of Applied Physics.

Ultra-low lattice thermal conductivity of monolayer penta-silicene and penta-germanene.

Jian-Sheng Wang, Zhaofu Zhang, Zhibin Gao, 2019, Physical chemistry chemical physics : PCCP.

Strain-promoted conductive metal-benzenhexathiolate frameworks for overall water splitting.

Yuzheng Guo, Xuhao Wan, F. R. Wang, 2022, Journal of colloid and interface science.

Computational study of transition metal dichalcogenide cold source MOSFETs with sub-60 mV per decade and negative differential resistance effect

Yuzheng Guo, Zhaofu Zhang, J. Robertson, 2022, npj 2D Materials and Applications.

Point Defect Stability and Dielectric Properties of Graphene-Like Monolayer Materials

Yuzheng Guo, X. Zha, Zhaofu Zhang, 2022, Chemistry of Materials.

A durable and pH-universal self-standing MoC–Mo2C heterojunction electrode for efficient hydrogen evolution reaction

Yuzheng Guo, Huayi Yin, Dihua Wang, 2021, Nature Communications.

Fabrication and mechanical properties of self-toughening ZrB2–SiC composites from in-situ reaction

J. Dai, Zhaofu Zhang, Yingjun Liu, 2019, Journal of Advanced Ceramics.

Enhanced fracture properties of ZrB2-based composites by in-situ grown SiC nanowires

Zhaofu Zhang, J. Sha, Y. Zu, 2018, Advances in Applied Ceramics.

Fabrication and mechanical properties of self-toughening ZrB₂-SiC composites from in-situ reaction

J. Dai, Zhaofu Zhang, Yingjun Liu, 2020 .

Machine-Learning-Accelerated Catalytic Activity Predictions of Transition Metal Phthalocyanine Dual-Metal-Site Catalysts for CO2 Reduction.

Yuzheng Guo, Xuhao Wan, Zhaofu Zhang, 2021, The journal of physical chemistry letters.

Single-Atom Rhodium on Defective g-C3N4: A Promising Bifunctional Oxygen Electrocatalyst

J. Robertson, Yuzheng Guo, Xuhao Wan, 2021 .

EFFECT OF ELECTROPLATING PARAMETERS ON MICROSTRUCTURE OF COPPER COATING ON CARBON FIBERS USED FOR FABRICATION OF ALUMINUM MATRIX COMPOSITE

Wei Zhang, J. Dai, Zhaofu Zhang, 2017 .

EFFECTS OF RESIDUAL STRESS ON STRENGTH OF CARBON FIBER-REINFORCED CERAMIC COMPOSITE : THEORETICAL INVESTIGATION AND NUMERICAL SIMULATION

J. Dai, Zhaofu Zhang, Jian Li, 2017 .

Role of fiber–matrix adhesion at CFRP stage on microstructure and mechanical properties of C/C–SiC composite

Zhaofu Zhang, J. Sha, Y. Zu, 2021, International Journal of Applied Ceramic Technology.

Machine‐learning‐based interatomic potentials for advanced manufacturing

Chaoyue Ji, Yuzheng Guo, Xuhao Wan, 2021, International Journal of Mechanical System Dynamics.

A density-functional-theory-based and machine-learning-accelerated hybrid method for intricate system catalysis

Wei Yu, Yuzheng Guo, Xuhao Wan, 2021, Materials Reports: Energy.

Hybrid band offset calculation for heterojunction interfaces between disparate semiconductors

J. Robertson, S. Clark, Yuzheng Guo, 2020, Applied Physics Letters.

A Feasible Strategy for Identifying Single-Atom Catalysts Toward Electrochemical NO-to-NH3 Conversion.

Yuzheng Guo, Xuhao Wan, Zhaofu Zhang, 2021, Small.

Theoretical Insights into the Mechanism of Selective Nitrate‐to‐Ammonia Electroreduction on Single‐Atom Catalysts

Yuzheng Guo, Xuhao Wan, Zhaofu Zhang, 2020, Advanced Functional Materials.

Carbon cluster formation and mobility degradation in 4H-SiC MOSFETs

J. Robertson, Yuzheng Guo, Zhaofu Zhang, 2021 .

Theoretical study on the photocatalytic properties of 2D InX(X = S, Se)/transition metal disulfide (MoS2 and WS2) van der Waals heterostructures.

R. Zheng, Yuzheng Guo, Baikui Li, 2020, Nanoscale.

Strain-tunable III-nitride/ZnO heterostructures for photocatalytic water-splitting: A hybrid functional calculation

Baikui Li, Zhaofu Zhang, Xi Tang, 2020, APL Materials.

Interface Engineering of Monolayer MoS2/GaN Hybrid Heterostructure: Modified Band Alignment for Photocatalytic Water Splitting Application by Nitridation Treatment.

Kevin J. Chen, Baikui Li, Zhaofu Zhang, 2018, ACS applied materials & interfaces.

Extrapolated Defect Transition Level in Two-dimensional Materials: The Case of Charged Native Point Defects in Monolayer Hexagonal Boron Nitride.

Zhaofu Zhang, B. Lv, Zhibin Gao, 2020, ACS applied materials & interfaces.

Transition Metal and N Doping on AlP Monolayers for Bifunctional Oxygen Electrocatalysts: Density Functional Theory Study Assisted by Machine Learning Description.

Tianyun Liu, Zhaofu Zhang, Yuanzheng Chen, 2021, ACS applied materials & interfaces.

Enhanced electrochemical oxygen evolution reaction activity on natural single-atom catalysts transition metal phthalocyanines: the substrate effect

Yuzheng Guo, Xuhao Wan, Zhaofu Zhang, 2020, Catalysis Science & Technology.

Impact of carbon–carbon defects at the SiO2/4H-SiC (0001) interface: a first-principles calculation

J. Robertson, Yuzheng Guo, Zhaofu Zhang, 2021, Journal of Physics D: Applied Physics.

Computational Screening Single-Atom Catalysts Supported on g-CN for N2 Reduction: High Activity and Selectivity

Yuzheng Guo, Zhaofu Zhang, Huan Niu, 2020 .

Structural modulation and assembling of metal halide perovskites for solar cells and light‐emitting diodes

Yuanhang Cheng, F. Lin, Zhaofu Zhang, 2021, InfoMat.

Electronic Structure and Ferromagnetism Modulation in Cu/Cu2O Interface: Impact of Interfacial Cu Vacancy and Its Diffusion

Weihua Wang, Zhaofu Zhang, R. Zheng, 2015, Scientific Reports.

Tunable Electronic Properties of Graphene/g-AlN Heterostructure: The Effect of Vacancy and Strain Engineering

Zhaofu Zhang, B. Lv, Xuefei Liu, 2019, Nanomaterials.

Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer

Feifei Lan, M. Hua, Baikui Li, 2016, Scientific Reports.

Band alignment calculation of dielectric films on VO2

J. Robertson, Yuzheng Guo, Zhaofu Zhang, 2019, Microelectronic Engineering.

Theoretical study of the interface engineering for H-diamond field effect transistors with h-BN gate dielectric and graphite gate

J. Robertson, Yuzheng Guo, X. Zha, 2022, Applied Physics Letters.

Tunable Properties of Novel Ga2O3 Monolayer for Electronics and Optoelectronics Applications.

M. Hua, Zhaofu Zhang, Zhibin Gao, 2020, ACS applied materials & interfaces.

Thermal transport properties of novel two-dimensional CSe.

Jia Song, Zhaofu Zhang, B. Lv, 2020, Physical chemistry chemical physics : PCCP.

Reduced Fermi Level Pinning at Physisorptive Sites of Moire-MoS2/Metal Schottky Barriers

Yuzheng Guo, Zhaofu Zhang, J. Robertson, 2022, ACS applied materials & interfaces.

Two-dimensional metal-organic frameworks as efficient electrocatalysts for bifunctional oxygen evolution/reduction reactions

Yuzheng Guo, Xuhao Wan, Zhaofu Zhang, 2022, Journal of Materials Chemistry A.

Normally-Off LPCVD-SiNx/GaN MIS-FET With Crystalline Oxidation Interlayer

Jin Wei, Ning Wang, Kevin J. Chen, 2017, IEEE Electron Device Letters.

Phase transition of two-dimensional ferroelectric and paraelectric Ga2O3 monolayers: A density functional theory and machine learning study

K. Nordlund, J. Byggmästar, F. Djurabekova, 2021, Physical Review B.

Physical Crosslinked Poly(N-isopropylacrylamide)/Nano-Hydroxyapatite Thermosensitive Composite Hydrogels

Zhaofu Zhang, Shuo Wang, Qihai Zhang, 2018, Journal of Inorganic and Organometallic Polymers and Materials.

Theoretical investigation on graphene-supported single-atom catalysts for electrochemical CO2 reduction

J. Robertson, Yuzheng Guo, Zhaofu Zhang, 2020 .

Layer-dependent second-order Raman intensity of Mo S 2 and WS e 2 : Influence of intervalley scattering

J. Chen, Qingkai Qian, Zhaofu Zhang, 2018 .

Enhanced dielectric deposition on single-layer MoS2 with low damage using remote N2 plasma treatment

Feifei Lan, Jiacheng Lei, M. Hua, 2017, Nanotechnology.

Two-dimensional ferroelectric MoS2/Ga2O3 heterogeneous bilayers with highly tunable photocatalytic and electrical properties.

M. Hua, Hao Chen, Zhaofu Zhang, 2022, Nanoscale.

Below bandgap photoluminescence of an AlN crystal: Co-existence of two different charging states of a defect center

S. Golovynskyi, Baikui Li, Jiannong Wang, 2020 .

Origin of Weaker Fermi Level Pinning and Localized Interface States at Metal Silicide Schottky Barriers

J. Robertson, Yuzheng Guo, Zhaofu Zhang, 2020, The Journal of Physical Chemistry C.

Defects and Passivation Mechanism of the Suboxide Layers at SiO₂/4H-SiC (0001) Interface: A First-Principles Calculation

J. Robertson, Yuzheng Guo, Zhaofu Zhang, 2021, IEEE Transactions on Electron Devices.

GaN as an interfacial passivation layer: tuning band offset and removing fermi level pinning for III-V MOS devices.

Changhong Wang, R. Wallace, Kyeongjae Cho, 2015, ACS applied materials & interfaces.

Role of the third metal oxide in In–Ga–Zn–O4 amorphous oxide semiconductors: Alternatives to gallium

J. Robertson, Yuzheng Guo, Zhaofu Zhang, 2020 .

Enhanced Gate Reliability in GaN MIS-FETs by Converting the GaN Channel into Crystalline Gallium Oxynitride

Zheyang Zheng, M. Hua, Zhaofu Zhang, 2019, ACS Applied Electronic Materials.

Two-Dimensional Ferroelectric Ga2O3 Bilayers with Unusual Strain-Engineered Interlayer Interactions

M. Hua, Hao Chen, Zhaofu Zhang, 2021, Chemistry of Materials.

Tunable contacts and device performances in graphene/group-III monochalcogenides MX (M = In, Ga; X = S, Se) van der Waals heterostructures

J. Robertson, Yuzheng Guo, Zhaofu Zhang, 2021, Journal of Applied Physics.

The Anisotropic Transport Property of Antimonene MOSFETs.

J. Robertson, Can Zhang, Yuzheng Guo, 2020, ACS applied materials & interfaces.

Ab-initio study of Schottky barrier heights at metal-diamond (1 1 1) interfaces

Dongliang Zhang, Yuzheng Guo, Zhaofu Zhang, 2023, Applied Surface Science.

Tellurium Nanowire Gate-All-Around MOSFETs for Sub-5 nm Applications.

J. Robertson, Can Zhang, Yuzheng Guo, 2021, ACS applied materials & interfaces.

Mobility Degradation in 4H-SiC MOSFETs and Interfacial Formation of Carbon Clusters

Zhaofu Zhang, J. Robertson, Y. Guo, 2021 .

Chemical bonding and band alignment at X2O3/GaN (X = Al, Sc) interfaces

J. Robertson, Yuzheng Guo, Zhaofu Zhang, 2019, Applied Physics Letters.

Deep-learning-assisted theoretical insights into the compatibility of environment friendly insulation medium with metal surface of power equipment.

Yuzheng Guo, Xuhao Wan, Zhaofu Zhang, 2023, Journal of colloid and interface science.

Two-Dimensional Gallium Oxide Monolayer for Gas-Sensing Application.

Yuzheng Guo, M. Hua, Zhaofu Zhang, 2021, The journal of physical chemistry letters.

Large contribution of quasi-acoustic shear phonon modes to thermal conductivity in novel monolayer Ga2O3

Jian-Sheng Wang, Zhaofu Zhang, Zhibin Gao, 2020, Journal of Applied Physics.

Integration of LPCVD-SiNx gate dielectric with recessed-gate E-mode GaN MIS-FETs: Toward high performance, high stability and long TDDB lifetime

Jin Wei, Baoshun Zhang, Yong Cai, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Identifying TM-N4 active sites for selective CO2-to-CH4 conversion: A computational study

Yuzheng Guo, Xuhao Wan, Zhaofu Zhang, 2022, Applied Surface Science.

High-Accuracy Neural Network Interatomic Potential for Silicon Nitride

Yuzheng Guo, S. Shen, Zhaofu Zhang, 2023, Nanomaterials.

Dependence of ${V}_{\text {TH}}$ Stability on Gate-Bias Under Reverse-Bias Stress in E-mode GaN MIS-FET

Jin Wei, Kevin J. Chen, Zheyang Zheng, 2018, IEEE Electron Device Letters.

High‐Throughput Electronic Structures and Ferroelectric Interfaces of HfO2 by GGA+U(d,p) Calculations

Yuzheng Guo, Zhaofu Zhang, J. Robertson, 2021, physica status solidi (RRL) – Rapid Research Letters.

Schottky barrier heights of defect-free metal/ZnO, CdO, MgO, and SrO interfaces

J. Robertson, Yuzheng Guo, Zhaofu Zhang, 2021, 2102.04482.

Mechanism of Threshold Voltage Instability in SiC MOSFETs and Impacts on Dynamic Switching

Yuzheng Guo, Cungang Hu, Zhaofu Zhang, 2023, 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Ab initio study of impact of nitridation at amorphous-SiNx/GaN interface

M. Hua, Qingkai Qian, Gaofei Tang, 2018, Applied Physics Express.

Manipulating sublattice distortion induced by Mn2+ doping for boosting the emission characteristics of self-trapped exciton in Cs4SnBr6

Yuzheng Guo, Dejian Hou, Zhaofu Zhang, 2023, Journal of Materials Chemistry C.

High-Accuracy Machine-Learned Interatomic Potentials for the Phase Change Material Ge3Sb6Te5

Wei Yu, Yuzheng Guo, Xuhao Wan, 2023, Chemistry of Materials.

Adsorption and diffusion of alkali atoms on FeX2 (X = Se, S) surfaces for potassium-ion battery applications

Yuzheng Guo, Siyuan Xu, Zhaofu Zhang, 2021 .

Remote N2 plasma treatment to deposit ultrathin high-k dielectric as tunneling contact layer for single-layer MoS2 MOSFET

Jin Wei, Jiacheng Lei, M. Hua, 2017, Applied Physics Express.

Density functional analysis of oxide dipole layer voltage shifts in high κ/metal gate stacks

Yuzheng Guo, Zhaofu Zhang, J. Robertson, 2023, Journal of Applied Physics.

Phase dependence of Schottky barrier heights for Ge–Sb–Te and related phase-change materials

J. Robertson, Yuzheng Guo, Zhaofu Zhang, 2020, Journal of Applied Physics.

Atomic structure and band alignment at Al2O3/GaN, Sc2O3/GaN and La2O3/GaN interfaces: A first-principles study

J. Robertson, Yuzheng Guo, Zhaofu Zhang, 2019, Microelectronic Engineering.

Theoretical predictions of the structural stability and property contrast for Sb-rich Ge3Sb6Te5 phase-change materials

J. Robertson, Wei Yu, Yuzheng Guo, 2023, Applied Physics Letters.

Extending the metal-induced gap state model of Schottky barriers

J. Robertson, Yuzheng Guo, Hongfei Li, 2020, Journal of Vacuum Science & Technology B.