S. Islam

发表

600 V GaN vertical V-trench MOSFET with MBE regrown channel

D. Jena, H. Xing, Xiang Gao, 2017, 2017 75th Annual Device Research Conference (DRC).

Polarization-induced Zener tunnel diodes in GaN/InGaN/GaN heterojunctions

Patrick Fay, Debdeep Jena, Huili Xing, 2015, 1508.05536.

Enhancing Wall-Plug Efficiency for Deep-UV Light-Emitting Diodes: From Crystal Growth to Devices

D. Jena, H. Xing, V. Protasenko, 2019, Light-Emitting Diodes.

GaN/AlN quantum-disk nanorod 280 nm deep ultraviolet light emitting diodes by molecular beam epitaxy

D. Jena, H. Xing, V. Protasenko, 2019 .

Bandgap narrowing and Mott transition in Si-doped Al0.7Ga0.3N

D. Jena, H. Xing, V. Protasenko, 2019, Applied Physics Letters.

High-quality InN films on GaN using graded InGaN buffers by MBE

D. Jena, H. Xing, S. Rouvimov, 2016 .

Engineering the Berreman mode in mid-infrared polar materials.

V. Podolskiy, D. Jena, H. Xing, 2020, Optics express.

Terahertz spectroscopy of an electron-hole bilayer system in AlN/GaN/AlN quantum wells

D. Jena, H. Xing, B. Sensale‐Rodriguez, 2017, 1708.04752.

Repeatable Room Temperature Negative Differential Conductance in GaN/AlN Resonant Tunneling Diodes

D. Jena, H. Xing, P. Fay, 2016, 1606.08100.

Fiber Reinforced Layered Dielectric Nanocomposite

Muhammad M. Rahman, P. Ajayan, H. Xing, 2019, Advanced Functional Materials.

Deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures

D. Jena, H. Xing, S. Rouvimov, 2017, 1704.08737.

MBE-grown 232–270 nm deep-UV LEDs using monolayer thin binary GaN/AlN quantum heterostructures

D. Jena, H. Xing, S. Rouvimov, 2016, 1610.05651.

Localized surface phonon polariton resonators in GaN

D. Jena, D. Wasserman, A. Hoffman, 2015, 2015 Conference on Lasers and Electro-Optics (CLEO).

Thermal conductivity of crystalline AlN and the influence of atomic-scale defects

E. Pop, K. Goodson, A. Sood, 2019, Journal of Applied Physics.

Room temperature microwave oscillations in GaN/AlN resonant tunneling diodes with peak current densities up to 220 kA/cm2

Huili Grace Xing, Patrick Fay, Debdeep Jena, 2018 .

New Tunneling Features in Polar III-Nitride Resonant Tunneling Diodes

Huili Grace Xing, Patrick Fay, Debdeep Jena, 2017 .

Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures

Debdeep Jena, P. K. Kandaswamy, Vladimir Protasenko, 2014 .

Nitride LEDs based on quantum wells and quantum dots

D. Jena, V. Protasenko, A. Verma, 2014 .

234 nm and 246 nm AlN-Delta-GaN quantum well deep ultraviolet light-emitting diodes

Jing Zhang, Debdeep Jena, Yu Kee Ooi, 2018 .

Activation of buried p-GaN in MOCVD-regrown vertical structures

D. Jena, H. Xing, Xiang Gao, 2018, Applied Physics Letters.

Deep ultraviolet emission from ultra-thin GaN/AlN heterostructures

Debdeep Jena, Christina M. Jones, Vladimir Protasenko, 2016 .

Development of GaN Vertical Trench-MOSFET With MBE Regrown Channel

Huili Grace Xing, Xiang Gao, Kazuki Nomoto, 2018, IEEE Transactions on Electron Devices.

Localized surface phonon polariton resonances in polar gallium nitride

D. Jena, D. Wasserman, A. Hoffman, 2015 .

First demonstration of strained AlN/GaN/AlN quantum well FETs on SiC

D. Jena, H. Xing, P. Fay, 2016, Device Research Conference.

Molecular beam epitaxy of polar III-nitride resonant tunneling diodes

D. Jena, J. Encomendero, S. Islam, 2021 .

Physics and polarization characteristics of 298 nm AlN-delta-GaN quantum well ultraviolet light-emitting diodes

Huili Grace Xing, Debdeep Jena, Cheng Liu, 2017 .

Deep-UV LEDs using polarization-induced doping: Electroluminescence at cryogenic temperatures

D. Jena, H. Xing, S. Rouvimov, 2015, 2015 73rd Annual Device Research Conference (DRC).