M. Zhu

发表

600 V GaN vertical V-trench MOSFET with MBE regrown channel

D. Jena, H. Xing, Xiang Gao, 2017, 2017 75th Annual Device Research Conference (DRC).

Terahertz imaging employing graphene modulator arrays.

Huili Grace Xing, Lei Liu, Debdeep Jena, 2013, Optics express.

Extraordinary control of terahertz beam reflectance in graphene electro-absorption modulators.

Huili Grace Xing, Lei Liu, Wei Li, 2012, Nano letters.

Exceptional tunability of THz reflectance in graphene structures

D. Jena, H. Xing, V. Protasenko, 2012, 2012 37th International Conference on Infrared, Millimeter, and Terahertz Waves.

Efficient terahertz electro-absorption modulation employing graphene plasmonic structures

Huili Grace Xing, Lei Liu, Debdeep Jena, 2012 .

Design and optimization of GaN lateral polarization-doped super-junction (LPSJ): An analytical study

D. Jena, H. Xing, K. Nomoto, 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Experimental demonstration of enhanced terahertz coupling to plasmon in ultra-thin membrane AlGaN/GaN HEMT arrays

D. Jena, H. Xing, J. Encomendero, 2017, 2017 75th Annual Device Research Conference (DRC).

Design and optimization of a novel SOI LDMOS structure using PIN junction

G. Du, M. Zhu, Juncheng Wang, 2010, 2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC).

High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

D. Jena, H. Xing, P. Fay, 2015 .

Strained GaN quantum-well FETs on single crystal bulk AlN substrates

D. Jena, H. Xing, Pei Zhao, 2016, 1611.08914.

Electron mobility in polarization-doped Al0-0.2GaN with a low concentration near 1017 cm−3

D. Jena, H. Xing, Xiang Gao, 2017, 1704.03001.

Impact of CF4 plasma treatment on threshold voltage and mobility in Al2O3/InAlN/GaN MOSHEMTs

D. Jena, H. Xing, Zongyang Hu, 2014 .

Ultralow-Leakage AlGaN/GaN High Electron Mobility Transistors on Si With Non-Alloyed Regrown Ohmic Contacts

Yu Cao, D. Jena, H. Xing, 2016, IEEE Electron Device Letters.

THz plasmonic absorption in periodically patterned semiconductor ribbons

H. Xing, B. Sensale‐Rodriguez, M. Zhu, 2013, 2013 IEEE International Wireless Symposium (IWS).

Production of natural carotene-dispersed polymer microparticles by SEDS-PA co-precipitation

Chunping Li, A. Shan, Wenzhi He, 2007 .

Comparison of unit cell coupling for grating‐gate and high electron mobility transistor array THz resonant absorbers

Hugo O. Condori Quispe, D. Jena, H. Xing, 2018, Journal of Applied Physics.

Realization of GaN PolarMOS using selective-area regrowth by MBE and its breakdown mechanisms

E. Beam, D. Jena, H. Xing, 2019, Japanese Journal of Applied Physics.

Rod-shaped CeO2 intercalated Graphene for supporting Pt composite as Anode catalysts for DMFCs

Yanfang Gao, Zhenzhu Cao, Jinrong Liu, 2015 .

High-voltage polarization-induced vertical heterostructure p-n junction diodes on bulk GaN substrates

D. Jena, H. Xing, P. Fay, 2015, 2015 73rd Annual Device Research Conference (DRC).

Comparing buffer leakage in PolarMOSH on SiC and free-standing GaN substrates

D. Jena, H. Xing, Xiang Gao, 2016, 2016 Lester Eastman Conference (LEC).

Efficient terahertz electro-absorption modulation employing graphene plasmonic structures

D. Jena, H. Xing, B. Sensale‐Rodriguez, 2012, 1211.4176.

Dual Optical Marker Raman Characterization of Strained GaN-channels on AlN Using AlN/GaN/AlN Quantum Wells and 15N Isotopes

D. Jena, H. Xing, V. Protasenko, 2015, 1502.00072.

GaN-on-GaN p-n power diodes with 3.48 kV and 0.95 mΩ-cm2: A record high figure-of-merit of 12.8 GW/cm2

Huili Grace Xing, Kazuki Nomoto, T. Mishima, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

GaN vertical nanowire and fin power MISFETs

D. Jena, H. Xing, Xiang Gao, 2017, 2017 75th Annual Device Research Conference (DRC).

1.7-kV and 0.55- $\text{m}\Omega \cdot \text {cm}^{2}$ GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability

Huili Grace Xing, Kazuki Nomoto, Zongyang Hu, 2016, IEEE Electron Device Letters.

Vertical Ga2O3 Schottky barrier diodes on single-crystal β-Ga2O3 (−201) substrates

D. Jena, H. Xing, A. Verma, 2016, 2016 74th Annual Device Research Conference (DRC).

Unique opportunity to harness polarization in GaN to override the conventional power electronics figure-of-merits

D. Jena, H. Xing, M. Qi, 2015, 2015 73rd Annual Device Research Conference (DRC).

GaN lateral PolarSJs: Polarization-doped super junctions

D. Jena, H. Xing, Zongyang Hu, 2014, Device Research Conference.

Activation of buried p-GaN in MOCVD-regrown vertical structures

D. Jena, H. Xing, Xiang Gao, 2018, Applied Physics Letters.

Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructure field-effect transistors on AlN

D. Jena, H. Xing, V. Protasenko, 2014 .

Development of GaN Vertical Trench-MOSFET With MBE Regrown Channel

Huili Grace Xing, Xiang Gao, Kazuki Nomoto, 2018, IEEE Transactions on Electron Devices.

1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

Yu Cao, Huili Grace Xing, Kazuki Nomoto, 2015, IEEE Electron Device Letters.

AlGaN/GaN HEMTs on Si by MBE with regrown contacts and fT = 153 GHz

D. Jena, H. Xing, W. Hwang, 2014 .

Micronization of the natural pigment-bixin by the SEDS process through prefilming atomization

Wenzhi He, M. Zhu, H. Hong, 2005 .

Distributed polarization-doped GaN p–n diodes with near-unity ideality factor and avalanche breakdown voltage of 1.25 kV

Zexuan Zhang, D. Jena, H. Xing, 2022, Applied Physics Letters.

Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown

Huili Grace Xing, Xiang Gao, Kazuki Nomoto, 2015 .

1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by Molecular Beam Epitaxy

Huili Grace Xing, Xiang Gao, Kazuki Nomoto, 2017, IEEE Electron Device Letters.

Electron mobility in polarization-doped Al0-0.2GaN with a low concentration near 1017 cm−3

D. Jena, H. Xing, Xiang Gao, 2017, 1704.03001.

Direct electrical observation of plasma wave-related effects in GaN-based two-dimensional electron gases

Huili Grace Xing, Patrick Fay, Berardi Sensale-Rodriguez, 2014 .