C. Murray

发表

Low-Energy Proton-Induced Single-Event-Upsets in 65 nm Node, Silicon-on-Insulator, Latches and Memory Cells

H.H.K. Tang, M. Gordon, D. Heidel, 2007, IEEE Transactions on Nuclear Science.

High-mobility ultrathin semiconducting films prepared by spin coating

A. Afzali, D. Mitzi, M. Copel, 2004, Nature.

High-resolution three-dimensional structural microscopy by single-angle Bragg ptychography.

J. Holt, M. Allain, V. Chamard, 2015, Nature materials.

32 and 45 nm Radiation-Hardened-by-Design (RHBD) SOI Latches

P. Marshall, K. Label, K. Stawiasz, 2011, IEEE Transactions on Nuclear Science.

Origin of stress gradients induced in capped, copper metallization

C. Murray, 2014 .

Submicron mapping of strain distributions induced by three-dimensional through-silicon via features

T. Graves-abe, R. Robison, C. Murray, 2013 .

Review Article: Stress in thin films and coatings: Current status, challenges, and prospects

L. Martinu, G. Doll, M. Sebastiani, 2018 .

Extendibility of NiPt silicide to the 22-nm node CMOS technology

Anna W. Topol, K. Ohuchi, V. Narayanan, 2008, Extended Abstracts - 2008 8th International Workshop on Junction Technology (IWJT '08).

Quasiparticle tunneling as a probe of Josephson junction barrier and capacitor material in superconducting qubits

R. Shelby, M. Steffen, J. Sleight, 2022, npj Quantum Information.

In situ growth of highly oriented Pb(Zr0.5Ti0.5)O3 thin films by low-temperature metal–organic chemical vapor deposition

I. Tsu, V. Dravid, G. Bai, 1998 .

Accelerated Publication: Evolution of stress gradients in Cu films and features induced by capping layers

E. T. Ryan, J. Jordan-Sweet, M. Toney, 2012 .

Stress gradients observed in Cu thin films induced by capping layers

J. Jordan-Sweet, P. Besser, C. Murray, 2010 .

In situ evolution of stress gradients in Cu films induced by capping layers

M. Toney, P. Besser, C. Murray, 2010 .

Modeling of Alpha-Induced Single Event Upsets for 45 nm Node SOI Devices Using Realistic C4 and 3D Circuit Geometries

H.H.K. Tang, D. Heidel, K. Rodbell, 2009, IEEE Transactions on Nuclear Science.

Investigating microwave loss of SiGe using superconducting transmon qubits

J. Orcutt, J. Bruley, M. Brink, 2021, Applied Physics Letters.

Devices, Materials, and Processes for Nanoelectronics: Characterization with Advanced X‐Ray Techniques Using Lab‐Based and Synchrotron Radiation Sources

Ehrenfried Zschech, Christophe Wyon, Conal E. Murray, 2011 .

Silicide-phase evolution and platinum redistribution during silicidation of Ni0.95Pt0.05/Si(100) specimens

D. Seidman, C. Murray, P. Adusumilli, 2012 .

Ni-Pt silicide formation through Ti mediating layers

J. Jordan-Sweet, C. Lavoie, M. Gribelyuk, 2007 .

Implementation of Robust Nickel Alloy Salicide Process for High-Performance 65nm SOI CMOS Manufacturing

A. Domenicucci, A. Frye, D. Brown, 2007, 2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).

Exploitation of a self-limiting process for reproducible formation of ultrathin Ni1−xPtx silicide films

A. Kellock, J. Jordan-Sweet, C. Lavoie, 2010 .

Characterization of room temperature recrystallization kinetics in electroplated copper thin films with concurrent x-ray diffraction and electrical resistivity measurements

J. Jordan-Sweet, E. Eisenbraun, C. Cabral, 2013 .

Mapping of the mechanical response in Si/SiGe nanosheet device geometries

J. Jordan-Sweet, C. Lavoie, N. Loubet, 2022, Communications Engineering.

Manipulating stress in Cu/low-k dielectric nanocomposites

E. T. Ryan, J. Jordan-Sweet, P. Besser, 2011 .

High-resolution three-dimensional structural microsc py by si gla gle Bragg ptycho raphy

J. Holt, M. Allain, V. Chamard, 2016 .

Titanium Silicide/Titanium Nitride Full Metal Gates for Dual-Channel Gate-First CMOS

C. Cabral, M. Frank, C. Ortolland, 2016, IEEE Electron Device Letters.

Stress gradients observed in Cu thin films induced by capping layers

J. Jordan-Sweet, P. Besser, C. Murray, 2010 .

Stress gradients induced in Cu films by capping layers

J. Jordan-Sweet, P. Besser, C. Murray, 2008 .

Tailoring capping layers to reduce stress gradients in copper metallization

E. T. Ryan, D. Priyadarshini, C. Murray, 2016 .

Observation of semiconductor device channel strain using in-line high resolution X-ray diffraction

Conal E. Murray, Stephen W. Bedell, Thomas N. Adam, 2013 .

Quantification of local strain distributions in nanoscale strained SiGe FinFET structures

Akira Sakai, Conal E. Murray, Shotaro Takeuchi, 2017 .

Liner materials for direct electrodeposition of Cu

F. Mcfeely, R. Rosenberg, P. Vereecken, 2003 .

Effects of strain energy on the recrystallization within narrow metallization

C. Murray, 2018 .

Evolution of Strain Energy During Recrystallization of Plated Cu Films

R. Rosenberg, I. C. Noyan, C. Murray, 2013, IEEE Transactions on Device and Materials Reliability.

Comment on “An analysis technique for extraction of thin film stresses from x-ray data” [Appl. Phys. Lett. 71, 2949 (1997)]

I. C. Noyan, C. Murray, 1998 .

Heteroepitaxial silicon film growth at 600 °C from an Al–Si eutectic melt

J. Jordan-Sweet, M. Reuter, F. Ross, 2010 .

A Comparison of Grain Size Measurements in Al-Cu Thin Films: Imaging Vs. Diffraction Techniques

L. Gignac, K. Rodbell, C. Murray, 2002, Microscopy Today.

High-resolution strain mapping in heteroepitaxial thin-film features

Hanfei Yan, Conal E. Murray, Ismail C. Noyan, 2005 .

Stress determination in nickel monosilicide films using x-ray diffraction

C. Lavoie, Zhen Zhang, C. Murray, 2009 .

Tomographic study of atomic-scale redistribution of platinum during the silicidation of Ni0.95Pt0.05/Si(100) thin films

L. Lauhon, D. Seidman, Y. Rosenwaks, 2009 .

Material matters in superconducting qubits

C. Murray, 2021, Materials Science and Engineering: R: Reports.

A rigorous comparison of X-ray diffraction thickness measurement techniques using silicon-on-insulator thin films

I. C. Noyan, C. Murray, A. Ying, 2009 .

High‐Mobility Ultrathin Semiconducting Films Prepared by Spin Coating.

Conal E. Murray, Laura L. Kosbar, David B. Mitzi, 2004 .

Auxetic crystals under stress: Peering into their mechanics using x-rays

C. Murray, 2019, Journal of Applied Physics.

Underlayer effects on texture evolution in copper films

P. Vereecken, K. Rodbell, C. Murray, 2006 .

Mitigating residual stress in Cu metallization

E. T. Ryan, J. Jordan-Sweet, M. Toney, 2012 .

Understanding stress gradients in microelectronic metallization

E. T. Ryan, J. Jordan-Sweet, M. Toney, 2012, Powder Diffraction.

Linking strain anisotropy and plasticity in copper metallization

J. Jordan-Sweet, D. Priyadarshini, S. Nguyen, 2015 .

The relationship between the golden section φ and the elastic constants of ensembles selected by diffraction methods

I. C. Noyan, C. Murray, 1996 .

Strain measured in a silicon-on-insulator, complementary metal-oxide-semiconductor device channel induced by embedded silicon-carbon source/drain regions

Z. Ren, I. C. Noyan, C. Murray, 2009 .

Thin film deposition research and its impact on microelectronics scaling

C. Cabral, C. Lavoie, A. Pyzyna, 2020 .

Submicron mapping of strained silicon-on-insulator features induced

B. Lai, M. Sankarapandian, I. C. Noyan, 2007 .

Solution-Processed Metal Chalcogenide Films for p-Type Transistors

D. Milliron, D. Mitzi, M. Copel, 2006 .

Nanoscale strain distributions in embedded SiGe semiconductor devices revealed by precession electron diffraction and dual lens dark field electron holography

Conal E. Murray, N. Bernier, J. Bruley, 2015 .

Strain mapping of Si devices with stress memorization processing

A. Domenicucci, J. Bruley, J. Rouviere, 2013 .

Quantitative nanoscale imaging of lattice distortions in epitaxial semiconductor heterostructures using nanofocused X-ray Bragg projection ptychography.

Ian McNulty, Ashish Tripathi, Conal E. Murray, 2012, Nano letters.

Local strain distributions in silicon-on-insulator/stressor-film composites

I. C. Noyan, C. Murray, Özgür Kalenci, 2008 .

Synchrotron microbeam x-ray radiation damage in semiconductor layers

B. Lai, I. C. Noyan, C. Murray, 2008 .

High‐Mobility p‐Type Transistor Based on a Spin‐Coated Metal Telluride Semiconductor

D. Mitzi, M. Copel, C. Murray, 2006 .

Environmental radiation impact on lifetimes and quasiparticle tunneling rates of fixed-frequency transmon qubits

M. Steffen, J. Sleight, M. Brink, 2021, Applied Physics Letters.

Investigating Surface Loss Effects in Superconducting Transmon Qubits

J. Gambetta, M. Steffen, J. Sleight, 2016, IEEE Transactions on Applied Superconductivity.

Extendibility of NiPt Silicide Contacts for CMOS Technology Demonstrated to the 22-nm Node

Anna W. Topol, M. Khare, C. Lavoie, 2007, 2007 IEEE International Electron Devices Meeting.

Equivalence of Kröner and weighted Voigt-Reuss models for x-ray stress determination

C. Murray, 2013 .

Efficient modeling of Bragg coherent x-ray nanobeam diffraction.

M. Allain, V. Chamard, M. Holt, 2015, Optics letters.

Coherent Bragg nanodiffraction at the hard X-ray Nanoprobe beamline

C. M. Folkman, M. Holt, J. Maser, 2014, Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences.

Nanoscale silicon-on-insulator deformation induced by stressed liner structures

M. Holt, J. Maser, I. C. Noyan, 2011 .

Submicron mapping of silicon-on-insulator strain distributions induced by stressed liner structures

B. Lai, K. Saenger, I. C. Noyan, 2008 .

Mapping local strain in thin film/substrate systems using x-ray microdiffraction topography

Hanfei Yan, I. C. Noyan, C. Murray, 2007 .

Quasiparticle tunneling as a probe of Josephson junction barrier and capacitor material in superconducting qubits

R. Shelby, M. Steffen, J. Sleight, 2022, npj Quantum Information.

Quasiparticle tunneling as a probe of Josephson junction barrier and capacitor material in superconducting qubits

R. Shelby, M. Steffen, J. Sleight, 2021, npj Quantum Information.

Stress determination through diffraction: establishing the link between Kröner and Voigt/Reuss limits

E. T. Ryan, J. Jordan-Sweet, S. Bedell, 2015, Powder Diffraction.

Applied and Residual Stress Determination Using X‐ray Diffraction

I. C. Noyan, C. Murray, 2013 .

Weighted mechanical models for residual stress determination using x-ray diffraction

E. T. Ryan, S. Bedell, C. Murray, 2013 .

Spatially transient stress effects in thin films by X-ray diffraction

I. C. Noyan, C. Goldsmith, C. Murray, 2005, Powder Diffraction.

In-situ study of dynamic structural rearrangements during stress relaxation

I. C. Noyan, C. Murray, A. Westwood, 1994 .

Strain imaging of nanoscale semiconductor heterostructures with x-ray Bragg projection ptychography.

Stephan O Hruszkewycz, J. Holt, M. Holt, 2014, Physical review letters.

Mechanics of edge effects in anisotropic thin film∕substrate systems

Conal E. Murray, C. Murray, 2006 .

Elastic strain relaxation in free-standing SiGe/Si structures

G. Cohen, J. Chu, P. Mooney, 2004 .

Texture inheritance in Al(Cu) interconnect materials

K. Rodbell, C. Murray, 2001 .

Three-Dimensional Atom-Probe Tomographic Studies of Nickel Monosilicide/Silicon Interfaces on a Subnanometer Scale

L. Lauhon, D. Seidman, Y. Rosenwaks, 2009, ECS Transactions.

Nanoscale strain characterization in microelectronic materials using X-ray diffraction

Z. Cai, I. C. Noyan, C. Murray, 2010, Powder Diffraction.

Predicting substrate resonance mode frequency shifts using conductive, through-substrate vias

D. Abraham, C. Murray, 2016 .

Measurements of radioactive contaminants in semiconductor materials

M. Gordon, K. Rodbell, C. Murray, 2016 .

Sharp Reduction of Contact Resistivities by Effective Schottky Barrier Lowering With Silicides as Diffusion Sources

W. Haensch, C. Lavoie, J. Newbury, 2010, IEEE Electron Device Letters.

Analytical Modeling of Participation Reduction in Superconducting Coplanar Resonator and Qubit Designs Through Substrate Trenching

C. Murray, 2020, IEEE Transactions on Microwave Theory and Techniques.

Analytical Determination of Participation in Superconducting Coplanar Architectures

J. Gambetta, M. Steffen, D. McClure, 2017, IEEE Transactions on Microwave Theory and Techniques.

The effect of Cu diffusion on the TDDB behavior in a low-k interlevel dielectrics

E. Liniger, S. Cohen, J. R. Lloyd, 2006, Microelectron. Reliab..

Texture Evolution in Al(Cu) Interconnect Materials

K. Rodbell, C. Murray, 2001 .