D. Mui

发表

Wafer Surface Charging Model for Single-Wafer Wet-Spin Processes

D. Mui, E. H. Lenz, C. Cyterski, 2011, IEEE Transactions on Semiconductor Manufacturing.

Minimizing Wafer Surface Charging for Single-Wafer Wet Cleaning for 10 nm and beyond

R. Dylewicz, D. Mui, M. Kawaguchi, 2016 .

Particle Cleaning Technologies to Meet Advanced Semiconductor Device Process Requirements

F. Reuter, R. Mettin, C. Lechner, 2014 .

A review of III-V semiconductor based metal-insulator- semiconductor structures and devices

Hadis Morkoç, H. Morkoç, D. Mui, 1993 .

On the barrier lowering and ideality factor of ideal Al/GaAs Schottky diodes

H. Morkoç, S. Strite, D. Mui, 1991 .

Analysis of in-situ etched and regrown {AlInAs}/{GaInAs} interfaces

L. Coldren, U. Mishra, T. Strand, 1997 .

Optimal thickness for Si interlayer as diffusion barrier at the Si_3N_4/GaAs interface: A transmission electron microscopy study

H. Morkoç, D. Mui, J. Gibson, 1995 .

Spreading of rinsing liquids across a horizontal rotating substrate

G. Fuller, J. M. Frostad, D. Mui, 2019, Physical Review Fluids.

Devices for phase-alternated decoupling in liquids, liquid crystals, and solids

D. Mui, B. Fung, Israel R. Bonnell, 1985 .

High‐field electron‐drift velocity and temperature in gallium phosphide

H. Morkoç, V. Arora, D. Mui, 1987 .

Enhanced particle removal using viscoelastic fluids

T. Walker, G. Fuller, C. Frank, 2014 .

Evaluation of broadband decoupling sequences applied to liquid crystal solutions

D. Mui, B. Fung, Israel R. Bonnell, 1984 .

Design of a Novel Wet-Etch Reactor and Etch Chemistries: Simulations and Experimental Verification

D. Hess, G. Levitin, D. Mui, 2010 .

Interference effects probed by photoreflectance spectroscopy

H. Morkoç, D. Huang, D. Mui, 1989 .

Effect of thin Ge layer on the surface depletion in GaAs

H. Morkoç, S. Strite, A. Salvador, 1990 .

Sputtered SiNx film for self‐aligned Si‐Zn diffusion into GaAs and AlGaAs

J. Merz, R. Boudreau, Hongtao Han, 1995 .

Surface migration induced self‐aligned InAs islands grown by molecular beam epitaxy

L. Coldren, P. Petroff, D. Mui, 1995 .

Mobility degradation and transferred electron effect in gallium arsenide and indium gallium arsenide

H. Morkoc, H. Morkoç, V. Arora, 1987, IEEE Transactions on Electron Devices.

Electrical characteristics of Si3N4/Si/GaAs metal‐insulator‐semiconductor capacitor

H. Morkoç, S. Strite, A. L. Demirel, 1991 .

Gate quality Si3N4/Si/n‐In0.53Ga0.47As metal‐insulator‐semiconductor capacitors

H. Morkoç, A. L. Demirel, D. Mui, 1992 .

Evolution of rivulets during spreading of an impinging water jet on a rotating, precoated substrate

G. Fuller, J. M. Frostad, D. Mui, 2019, Physics of Fluids.

Electron cyclotron resonance assisted low temperature ultrahigh vacuum chemical vapor deposition of Si using silane

H. Morkoç, S. Fang, D. Mui, 1991 .

Line-profile and critical-dimension monitoring using a normal incidence optical CD metrology

R. Lowe-Webb, R. Korlahalli, H. Sasano, 2004, IEEE Transactions on Semiconductor Manufacturing.

Line-profile and critical dimension measurements using a normal incidence optical metrology system

Weidong Yang, Wei Liu, R. Lowe-Webb, 2002, 13th Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference. Advancing the Science and Technology of Semiconductor Manufacturing. ASMC 2002 (Cat. No.02CH37259).

Line-profile and critical-dimension correlation between a normal-incidence optical CD metrology system and SEM

Weidong Yang, Roger Lowe-Webb, Wei Liu, 2002, SPIE Advanced Lithography.

Electrical characteristics of InSb-GaAs heterojunctions

J. Chyi, H. Morkoç, D. Mui, 1991 .

Mobility degradation in a quantum well heterostructure of a GaAs/AlGaAs prototype

Hadis Morkoç, Vijay K. Arora, H. Morkoç, 1987 .

${\rm SiO}_{2}$ Etching With Aqueous HF: Design and Development of a Laboratory-Scale Integrated Wet Etch/Dry Reactor

D. Mui, A. A. Pande, D. Hess, 2011, IEEE Transactions on Semiconductor Manufacturing.

Integrated optical metrology controls post-etch CDs

Wei Liu, D. Mui, H. Sasano, 2002 .

Characteristics of in-situ deposited Si3N4⧸Si⧸In0.53Ga0.47As metal-insulator-semiconductor structures

H. Morkoç, S. Strite, A. L. Demirel, 1993 .

Investigations of the Si3N4/Si/n‐GaAs insulator‐semiconductor interface with low interface trap density

H. Morkoç, S. Strite, A. L. Demirel, 1992 .

Low regrowth–interface recombination rates in InGaAs–GaAs buried ridge lasers fabricated by in situ processing

Brian Thibeault, Larry A. Coldren, Evelyn L. Hu, 1995 .

Generating sub-30-nm polysilicon gates using PECVD amorphous carbon as hardmask and anti-reflective coating

Wei Liu, Toshihiro Oga, Christopher Dennis Bencher, 2003, SPIE Advanced Lithography.

Effects of surface recombination on carrier distributions and device characteristics

L. Coldren, D. Mui, 1995 .

A new circuit model for tunneling related trapping at insulator-semiconductor interfaces in accumulation

John Reed, Hadis Morkoç, H. Morkoç, 1992 .

Barrier height variation in Al/GaAs Schottky diodes with a thin silicon interfacial layer

H. Morkoç, S. Strite, M. Nathan, 1991 .

Preparation and characterization of in situ deposited metal-insulator-III-V semiconductor devices

D. Mui, 1992 .

Si3N4/Si/In0.53Ga0.47As depletion‐mode metal‐insulator‐semiconductor field‐effect transistors with improved stability

H. Morkoç, N. Teraguchi, Zhifang Wang, 1993 .

Reduced backgating effect in modulation‐doped field‐effect transistors by p‐n junction isolation

M. Patil, H. Morkoç, D. Mui, 1988 .