M. Ogawa

发表

Degradation of (AlGa)As DH lasers due to facet oxidation

H. Yonezu, T. Yuasa, M. Ogawa, 1978 .

Shallow-deep instability of donor impurity states in Al-Ga-As system and its control by superlattice structure

T. Baba, T. Mizutani, M. Ogawa, 1986 .

Control of misfit dislocations in strain-relaxed SiGe buffer layers on SOI substrates

N. Taoka, S. Mochizuki, O. Nakatsuka, 2006 .

Degradation of photoluminescence intensity caused by excitation‐enhanced oxidation of GaAs surfaces

Tohru S. Suzuki, M. Ogawa, Tohru S. Suzuki, 1977 .

Initial Stage of Processes and Energy Bandgap Formation in Nitridation of Silicon Surface Using Nitrogen Radicals

H. Kondo, A. Sakai, M. Ogawa, 2007 .

Dislocation Morphology and Crystalline Mosaicity in Strain-Relaxed SiGe Buffer Layers on SOI

Shigeaki Zaima, Osamu Nakatsuka, Masaki Ogawa, 2006 .

Analysis of Microstructures in SiGe Buffer Layers on Silicon-on-Insulator Substrates

N. Taoka, N. Sugiyama, S. Takagi, 2005 .

Growth of highly strain-relaxed Ge1−xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded method

Y. Shimura, O. Nakatsuka, S. Takeuchi, 2008 .

Tensile strained Ge layers on strain-relaxed Ge1 − xSnx/virtual Ge substrates

O. Nakatsuka, S. Takeuchi, A. Sakai, 2008 .

Microscopic Structure of Directly Bonded Silicon Substrates

J. Kikkawa, S. Kimura, O. Nakatsuka, 2011 .

High-pressure recovery of olivine: implications for creep mechanisms and creep activation volume

S. Karato, M. Ogawa, 1982 .

Fabrication and Evaluation of Floating Gate Memories with Surface-Nitrided Si Nanocrystals

H. Kondo, A. Sakai, M. Ogawa, 2004, Digest of Papers. 2004 International Microprocesses and Nanotechnology Conference, 2004..

Physical mechanism of effective work function modulation caused by impurity segregation at Ni silicide/SiO2 interfaces

J. Koga, Y. Tsuchiya, A. Kinoshita, 2007 .

Characterization of bonding structures of directly bonded hybrid crystal orientation substrates

O. Nakatsuka, Hiromichi Isogai, K. Izunome, 2008 .

Novel method to introduce uniaxial tensile strain in Ge by microfabrication of Ge/Si1−xGex structures on Si(0 0 1) substrates

H. Kondo, O. Nakatsuka, A. Sakai, 2009 .

Alloying behavior of Ni/Au‐Ge films on GaAs

M. Ogawa, 1980 .

Film Structures and Electrical Properties of Pr Silicate Formed by Pulsed Laser Deposition

K. Ariyoshi, A. Sakai, M. Ogawa, 2005 .

Crystalline and Electrical Properties of Mictamict TiSiN Gate Metal–Oxcide–Semiconductor Capacitors

H. Kondo, A. Sakai, M. Ogawa, 2008 .

Ni silicide and germanide technology for contacts and metal gates in MOSFET applications

H. Kondo, O. Nakatsuka, A. Sakai, 2006, 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings.

Ni-Silicide/Si and SiGe(C) Contact Technology for ULSI Applications

O. Nakatsuka, A. Sakai, M. Ogawa, 2006, 2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors.

Silicide and germanide technology for contacts and gates in MOSFET applications

H. Kondo, O. Nakatsuka, A. Sakai, 2008 .

Improvement in NiSi/Si contact properties with C-implantation

K. Okubo, O. Nakatsuka, A. Sakai, 2005 .

Alloying reaction in thin nickel films deposited on GaAs

M. Ogawa, 1980 .

Local strain in SiGe/Si heterostructures analyzed by X-ray microdiffraction

N. Taoka, S. Kimura, O. Nakatsuka, 2006 .

Effective Work Function Control With Aluminum Postdoping in the Ni Silicide/HfSiON Systems

J. Koga, A. Nishiyama, Y. Tsuchiya, 2008, IEEE Transactions on Electron Devices.

Heavily Si-Doped GaAs and AlAs/n-GaAs Superlattice Grown by Molecular Beam Epitaxy

T. Baba, M. Ogawa, 1985 .

AlAs/n‐GaAs superlattice and its application to high‐quality two‐ dimensional electron gas systems

T. Baba, T. Mizutani, M. Ogawa, 1986 .

High Performance (AlAs/n-GaAs Superlattice)/GaAs 2DEGFETs with Stabilized Threshold Voltage

K. Ohata, T. Baba, T. Mizutani, 1984 .

Scanning tunneling microscopy observation of initial growth of Sn and Ge1−xSnx layers on Ge(0 0 1) substrates

O. Nakatsuka, S. Takeuchi, A. Sakai, 2008 .

Composition Dependence of Work Function in Metal (Ni,Pt)–Germanide Gate Electrodes

Akira Sakai, Shigeaki Zaima, Masaki Ogawa, 2006 .

Elimination of Persistent Photoconductivity and Improvement in Si Activation Coefficient by Al Spatial Separation from Ga and Si in Al–Ga–As:Si Solid System –a Novel Short Period AlAs/n-GaAs Superlattice–

T. Baba, T. Mizutani, M. Ogawa, 1983 .

Super-Doped Structure

T. Baba, T. Mizutani, M. Ogawa, 1986 .

In situ measurements of photoluminescence intensities from cleaved (110) surfaces of n-type InP in a vacuum and gas ambients

M. Ogawa, Tohru S. Suzuki, 1979 .

Growth and structure evaluation of strain-relaxed Ge1−xSnx buffer layers grown on various types of substrates

Akira Sakai, Shigeaki Zaima, Osamu Nakatsuka, 2006 .

Dependence of Electrical Characteristics on Interfacial Structure of Epitaxial NiSi2/Si Schottky Contacts Formed from Ni/Ti/Si System

O. Nakatsuka, A. Sakai, M. Ogawa, 2008 .

Dependence of Effective Work Function Modulation with Phosphorous Segregation on Ni to Si Ratio in Ni Silicide/SiO2 Systems

J. Koga, A. Nishiyama, Y. Tsuchiya, 2008 .

Electrical properties of epitaxial NiSi2/Si contacts with extremely flat interface formed in Ni/Ti/Si(001) system

Akira Sakai, Shigeaki Zaima, Osamu Nakatsuka, 2006 .

Physical origin of suppressed effective work function modulation at boron segregated NiSi∕SiON interface

J. Koga, A. Nishiyama, Y. Tsuchiya, 2008 .

Microstructures in directly bonded Si substrates

O. Sakata, T. Sakata, S. Kimura, 2009 .

Mechanical Properties and Chemical Reactions at the Directly Bonded Si–Si Interface

Akira Sakai, Shigeaki Zaima, Osamu Nakatsuka, 2009 .

Formation of Ge3N4/Ge Structures Using Nitrogen Radicals and Their Thermal Stability

H. Kondo, M. Ogawa, S. Zaima, 2008 .

DX Center-Like Trap in Selectively Si-Doped AlAs/GaAs Superlattices

T. Baba, N. Iwata, M. Ogawa, 1986 .

Metal-organic chemical vapor deposition of high-dielectric-constant praseodymium oxide films using a cyclopentadienyl precursor

H. Kondo, A. Sakai, M. Ogawa, 2010 .

Epitaxial Ag Layers on Si Substrates as a Buffer Layer for Carbon Nanotube Growth

O. Nakatsuka, S. Oida, A. Sakai, 2008 .