T. Böttcher

发表

Heat generation and dissipation in GaN‐based light emitting devices

M. Ilegems, C. Zellweger, S. Figge, 2003 .

TEM investigation of defect reduction and etch pit formation in GaN

P. Ryder, D. Hommel, T. Böttcher, 2003 .

Spatially modified layer properties related to the formation of gallium droplets on GaN(0001) surfaces during plasma-assisted molecular-beam epitaxy

S. Einfeldt, D. Hommel, T. Böttcher, 2001 .

INCORPORATION OF INDIUM DURING MOLECULAR BEAM EPITAXY OF INGAN

P. Ryder, S. Einfeldt, S. Figge, 1998 .

Microstructure of heteroepitaxial GaN revealed by x-ray diffraction

S. Einfeldt, S. Figge, D. Hommel, 2003 .

Mosaicity of GaN Epitaxial Layers: Simulation and Experiment

S. Figge, D. Hommel, T. Böttcher, 2001 .

Effect of sapphire-substrate thickness on the curvature of thick GaN films grown by hydride vapor phase epitaxy

P. Paskov, B. Monemar, D. Hommel, 2007 .

GaN based laser diodes – epitaxial growth and device fabrication

Marc Ilegems, Sven Einfeldt, Detlef Hommel, 2003 .

Pyramidal Defect Formation in View of Magnesium Segregation

P. Ryder, S. Figge, D. Hommel, 2002 .

Thermally induced stress in GaN layers with regard to film coalescence

S. Einfeldt, S. Figge, D. Hommel, 2001 .

Mapping strain gradients in the FIB-structured InGaN/GaN multilayered films with 3D X-ray microbeam

Yanfei Gao, G. Ice, Jin‐Seok Chung, 2010 .

Spatially Resolved Characterization of Plastic Deformation Induced by Focused-Ion Beam Processing in Structured InGaN/GaN Layers

Wing Kam Liu, J.-S. Chung, G. Ice, 2007 .

Statistical Analysis of Local Composition and Luminescence in InGaN Grown by Molecular Beam Epitaxy

P. Ryder, S. Einfeldt, D. Hommel, 1998 .

Phonons and free-carrier properties of binary, ternary, and quaternary group-III nitride layers measured by Infrared Spectroscopic Ellipsometry

Y. Nanishi, H. Amano, I. Akasaki, 2003 .

Hydride vapor-phase epitaxial GaN thick films for quasi-substrate applications: Strain distribution and wafer bending

I. Ivanov, P. Paskov, B. Monemar, 2004 .

Curvature and strain in thick HVPE-GaN for quasi-substrate applications

B. Monemar, C. Roder, D. Hommel, 2003 .

Magnon–fluxon interaction in a ferromagnet/superconductor heterostructure

B. Hillebrands, R. Vovk, V. Kruglyak, 2019, Nature Physics.

Magnon–fluxon interaction in a ferromagnet/superconductor heterostructure

R. Vovk, A. Chumak, T. Böttcher, 2019, Nature Physics.

Fast long-wavelength exchange spin waves in partially compensated Ga:YIG

M. Popov, P. Pirro, I. Zavislyak, 2021, Applied Physics Letters.

The role of high-temperature island coalescence in the development of stresses in GaN films

James S. Speck, Sven Einfeldt, Detlef Hommel, 2001 .

In situ and ex situ evaluation of the film coalescence for GaN growth on GaN nucleation layers

Sven Einfeldt, Detlef Hommel, Stephan Figge, 2000 .

Bending in HVPE grown GaN films : origin and reduction possibilities

P. Paskov, B. Monemar, D. Hommel, 2007 .

Cathodoluminescence profiling of InGaN-based quantum well structures and laser diodes - In-plane instabilities of light emission

M. Godlewski, E. Goldys, P. Perlin, 2003 .

Compositional inhomogeneities in InGaN studied by transmission electron microscopy and spatially resolved cathodoluminescence

P. Ryder, S. Einfeldt, D. Hommel, 1999 .

Magnesium segregation and the formation of pyramidal defects in p-GaN

P. Ryder, S. Figge, D. Hommel, 2002 .

Diffusion length of carriers and excitons in GaN - Influence of epilayer microstructure

M. Godlewski, E. Goldys, P. Prystawko, 2004 .

On the Impact of Microstructure on Luminescence of InGaN/GaN Multi Quantum Wells Grown by Molecular Beam Epitaxy

S. Einfeldt, S. Figge, D. Hommel, 1999 .

Analysis of Time-Resolved Donor-Acceptor-Pair Recombination in MBE and MOVPE Grown GaN : Mg

Sven Einfeldt, Detlef Hommel, Peter Michler, 2001 .

Relationship between sample morphology and carrier diffusion length in GaN thin films

M. Godlewski, M. Boćkowski, E. Goldys, 2002 .

Micro‐analysis of light emission properties of GaN‐based laser diodes

M. Godlewski, A. Zukauskas, S. Juršėnas, 2007 .

Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures

M. Godlewski, A. Zukauskas, S. Juršėnas, 2005 .