K. Zhuravlev

T. Malin, K. Zhuravlev, M. A. Parfenova, 2014, 2014 15th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM).

Indium‐Assisted Plasma‐Enhanced Low‐Temperature Growth of Silicon Oxide Nanowires

A. Zamchiy, K. Zhuravlev, D. Gulyaev, 2018 .

Van der Waals and Graphene-Like Layers of Silicon Nitride and Aluminum Nitride

B. Pécz, T. Malin, K. Zhuravlev, 2018, 2D Materials.

Formation of a Graphene-Like SiN Layer on the Surface Si(111)

B. Pécz, T. Malin, K. Zhuravlev, 2018, Semiconductors.

Electronic excitation transfer from an organic matrix to CdS nanocrystals produced by the Langmuir–Blodgett method

K. Zhuravlev, V. Plyusnin, A. A. Zarubanov, 2017 .

Optimal Stage Determination of Sapphire Nitridation Process Completion under High-Energy Electron Beam Influence

T. Malin, K. Zhuravlev, V. Mansurov, 2020, 2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM).

Photoluminescence of silicon nanocrystals under the effect of an electric field

E. N. Vandyshev, K. Zhuravlev, T. Shamirzaev, 2005 .

Microsecond Lifetime of Exciton Spin Polarization in (In,Al)As/AlAs Quantum Dots

M. Bayer, K. Zhuravlev, D. Yakovlev, 2013 .

Influence of shape of GaN/AlN quantum dots on luminescence decay law

K. Zhuravlev, A. Gutakovskii, I. Aleksandrov, 2012 .

High-Power Microwave Photodiodes Based on MBE-Grown InAlAs/InGaAs Heterostructures

K. Zhuravlev, A. M. Gilinskiǐ, A. Chizh, 2022, Technical Physics.

Ge/Si waveguide photodiodes with built-in layers of Ge quantum dots for fiber-optic communication lines

V. V. Ulyanov, A. Yakimov, A. Dvurechenskii, 2004 .

Increase in the diffusion length of minority carriers in AlxGa1–xN alloys (x = 0–0.1) fabricated by ammonia molecular beam epitaxy

T. Malin, K. Zhuravlev, E. Yakimov, 2015 .

Millisecond photoluminescence kinetics in a system of direct-bandgap InAs quantum dots in an AlAs matrix

D. Tenne, D. Zahn, C. Borczyskowski, 2003 .

Kinetics and thermodynamics of Si(111) surface nitridation in ammonia

T. Malin, K. Zhuravlev, V. Mansurov, 2016 .

Changes in optical properties of CdS nanoclusters in langmuir-blodgett films on passivation in ammonia

L. Sveshnikova, K. Zhuravlev, D. Shcheglov, 2008 .

Temperature dependence of photoluminescence of CdS nanoclusters formed in the Langmuir-Blodgett film matrix

L. Sveshnikova, K. Zhuravlev, E. Bagaev, 2006 .

Identification of photoluminescence bands in AlGaAs/InGaAs/GaAs PHEMT heterostructures with donor-acceptor-doped barriers

K. Zhuravlev, A. Bakarov, D. Gulyaev, 2015 .

Photoluminescence of AlGaAs/InGaAs/GaAs phemt heterostructures with donor-acceptor doping of barriers

K. Zhuravlev, A. Bakarov, A. Toropov, 2014, 2014 24th International Crimean Conference Microwave & Telecommunication Technology.

Amplified luminescence of heavily doped AlxGa1 – xN structures under optical pumping

N. V. Fateev, P. Bokhan, T. Malin, 2018 .

Studying average electron drift velocity in pHEMT structures

K. Zhuravlev, A. Borisov, A. Toropov, 2016 .

Kinetics of Photoluminescence of Two-Dimensionally Electron Gas in AlGaN/GaN Heterostructure

K. Zhuravlev, T. Shamirzaev, V. Mansurov, 2006, International Workshops and Tutorials on Electron Devices and Materials.

Strong sensitivity of photoluminescence of InAs/AlAs quantum dots to defects: evidence for lateral inter-dot transport

A. K. Kalagin, K. Zhuravlev, A. Toropov, 2006 .

Prolonged decay of free-to-bound photoluminescence in direct band gap InGaAs and AlGaAs alloys: magnetic resonance studies

K. Zhuravlev, A. Bakarov, T. Shamirzaev, 2006 .

Photoluminescence characterization of shallow acceptors in n-GaAs using a surface acoustic wave technique

K. Zhuravlev, A. Tsarev, A. Gilinsky, 2003 .

Structure and Charge of Nitrogen and Gallium Vacancies Located in the AlN/GaN Interface of Quantim Wells

K. Zhuravlev, Y. Lebiadok, I. Aleksandrov, 2018, 2018 International Conference Laser Optics (ICLO).

Broadband Spontaneous and Stimulated Luminescence of Heavily Doped AlxGa1 – xN Structures

N. V. Fateev, P. Bokhan, T. Malin, 2018, Atmospheric and Oceanic Optics.

Morphological, structural and luminescence properties of Si/β-FeSi2/Si heterostructures fabricated by Fe ion implantation and Si MBE

R. Bayazitov, K. Zhuravlev, T. Shamirzaev, 2007 .

Microstructure of quantum dots ensembles by EXAFS spectroscopy

A. Dvurechenskii, A. Nikiforov, K. Zhuravlev, 2009 .

VISIBLE AND NEAR-INFRARED LUMINESCENCE FROM SILICON NANOSTRUCTURES FORMED BY ION IMPLANTATION AND PULSE ANNEALING

A. K. Gutakovsky, I. Tyschenko, V. Volodin, 1997 .

Linearly polarized photoluminescence from an ensemble of wurtzite GaN/AlN quantum dots

P. Holtz, K. Zhuravlev, V. Mansurov, 2010 .

Photoluminescence dynamics in GaAs along an optically induced Mott transitiona)

M. Martín, A. Amo, K. Zhuravlev, 2007 .

Self-assembly of CdS nanocrystals obtained by Langmuir-Blodgett technique on the SiO2 surface

K. Zhuravlev, K. Svit, 2015, 2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices.

Evolution of the atomic and electronic structures during nitridation of the Si(1 1 1) surface under ammonia flux

T. Malin, K. Zhuravlev, V. Mansurov, 2022, Applied Surface Science.

Effect of electric field on recombination of self-trapped excitons in silicon nanocrystals

E. N. Vandyshev, K. Zhuravlev, 2007 .

Visible photoluminescence from Si nanocrystals fabricated in SiO/sub 2/ films after annealing under hydrostatic pressure

E. N. Vandyshev, I. Tyschenko, L. Rebohle, 2002, Proceedings. 3rd Annual Siberian Russian Workshop on Electron Devices and Materials.

Spin relaxation of negatively charged excitons in (In,Al)As/AlAs quantum dots with indirect band gap and type-I band alignment

M. Bayer, K. Zhuravlev, D. Yakovlev, 2012 .

Exciton-polariton transition induced by elastic exciton-exciton collisions in ultrahigh quality AIGaAs alloys

D. Zahn, A. Kobitski, K. Zhuravlev, 2006 .

Polariton luminescence in high-purity layers of AlGaAs solid solutions

K. Zhuravlev, A. Bakarov, A. Toropov, 2000 .

Morphology of GaN Monolayers Grown on AlN Surface During Ammonia Flow Cycling

T. Malin, K. Zhuravlev, S. Ponomarev, 2022, 2022 IEEE 23rd International Conference of Young Professionals in Electron Devices and Materials (EDM).

Microscopic parameters of materials containing GaN/AlN and InAs/AlAs heterostructures

T. S. Shamirsaev, W. Bras, K. Zhuravlev, 2005 .

Energy structure and radiative lifetimes of InxGa1−xN/AlN quantum dots

K. Zhuravlev, I. Aleksandrov, 2017 .

Temperature dependence of photoluminescence kinetics of GaN/AlN quantum dots

K. Zhuravlev, V. Mansurov, I. Aleksandrov, 2014, 2014 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO).

Photoluminescence from cadmium sulfide nanoclusters formed in the matrix of a Langmuir-Blodgett film

M. Voelskow, L. Sveshnikova, K. Zhuravlev, 2003 .

Interplay of exciton and electron-hole plasma recombination on the photoluminescence dynamics in bulk GaAs

M. Martín, A. Amo, K. Zhuravlev, 2005, cond-mat/0510706.

Effect of surface acoustic waves on low-temperature photoluminescence of GaAs

D. Petrov, K. Zhuravlev, Y. Bolkhovityanov, 1997 .

Influence of ligand architecture on the structure of coordination centre in dimeric europium carboxylates with 1,10-phenanthroline

Irina S. Pekareva, K. Lyssenko, K. Zhuravlev, 2009 .

Light particle irradiation effects in Si nanocrystals

A. K. Gutakovsky, H. Bernas, K. Zhuravlev, 1999 .

The origin of 2.7 eV blue luminescence band in zirconium oxide

V. Gritsenko, K. Zhuravlev, A. Yelisseyev, 2014 .

Use of high-purity AlxGa1−xas layers in epitaxial structures for high-power microwave field-effect transistors

Y. B. Myakishev, K. Zhuravlev, T. Shamirzaev, 1999 .

Luminescence line shapes of band to deep centre and donor–acceptor transitions in AlN

K. Zhuravlev, I. Aleksandrov, 2020, Journal of physics. Condensed matter : an Institute of Physics journal.

Donor–acceptor pair emission via defects with strong electron–phonon coupling in heavily doped AlxGa1−xN:Si layers with Al content x > 0.5

T. Malin, I. V. Osinnykh, K. Zhuravlev, 2019, Japanese Journal of Applied Physics.

Determination of the energy structure of recombination centers in heavily doped AlxGa1-xN:Si epitaxial layers with x > 0.5

T. Malin, I. V. Osinnykh, K. Zhuravlev, 2018 .

Properties of intensive defect-related band in photoluminescence spectra of heavily doped AlxGa1-xN:Si layers

T. Malin, I. V. Osinnykh, K. Zhuravlev, 2017 .

Nature of intensive defect-related broadband luminescence of heavily doped AlxGa1-xN:Si layers

T. Malin, I. V. Osinnykh, K. Zhuravlev, 2017 .

E. N. Vandyshev, M. Kaniewska, I. Antonova, 2003 .

Trapping of charge carriers into InAs/AlAs quantum dots at liquid-helium temperature

K. Zhuravlev, D. S. Abramkin, T. Shamirzaev, 2011 .

STM/STS Study of the Density of States and Contrast Behavior at the Boundary between (7 × 7)N and (8 × 8) Structures in the SiN/Si(111) System

V. Atuchin, T. Malin, K. Zhuravlev, 2022, Crystals.

Application of XAFS spectroscopy to studying the microstructure and electronic structure of quantum dots

Zh. V. Smagina, A. Dvurechenskii, A. Nikiforov, 2007 .

Local microstructure of Ge layers buried in a silicon crystal studied by extended X-ray absorption fine structure

E. Welter, A. Nikiforov, I. Demchenko, 2004 .

Self-assembled Quantum Dots: From Stranski–Krastanov to Droplet Epitaxy

K. Zhuravlev, T. Shamirzaev, A. Lyamkina, 2012 .

Atomic and energy structure of InAs/AlAs quantum dots

P. Holtz, M. Larsson, K. Zhuravlev, 2008 .

Determination of the phosphorus desorption rate during high-temperature annealing of the InP(001) substrate in an arsenic flux

K. Zhuravlev, A. Toropov, D. Dmitriev, 2022, Journal of Physics: Conference Series.

Transformation of the InP(001) surface upon annealing in an arsenic flux

K. Zhuravlev, T. Gavrilova, A. Gutakovskii, 2021 .

The Structure and Photoluminescence of Dislocations in Silicon 1

A. Chuvilin, A. Cherkov, K. Zhuravlev, 2006 .

Electrically activated chemical bath deposition of CdS on carbon nanotube arrays

A. V. Gusel’nikov, A. G. Kurenya, A. Okotrub, 2021 .

Optical properties of germanium monolayers on silicon

V. A. Kurbatov, T. N. Zavaritskaya, N. Mel’nik, 2001 .

The influence of irradiation and subsequent annealing on Si nanocrystals formed in SiO2 layers

H. Bernas, K. Zhuravlev, A. Gutakovskii, 2000 .

Decrease in the binding energy of donors in heavily doped GaN:Si layers

T. Malin, I. V. Osinnykh, K. Zhuravlev, 2014 .

Liquid phase epitaxial growth of undoped gallium arsenide from bismuth and gallium melts

K. S. Zhuravlev, K. Zhuravlev, S. I. Chikichev, 1989 .

Continuous order‐disorder phase transition (2×2)→(1×1) on the (0001)AlN surface

Z. Horváth, B. Pécz, E. Kolosovsky, 2007 .

Symmetry of electron states and optical transitions in GaN/AlN hexagonal quantum dots

V. Smirnov, K. Zhuravlev, P. Tronc, 2004 .

Crystal Structure and Predominant Defects in CdS Quantum Dots Fabricated by the Langmuir-Blodgett Method.

K. Zhuravlev, E. V. Fedosenko, T. Duda, 2021, Langmuir : the ACS journal of surfaces and colloids.

Electronic excitation energy transfer between CdS quantum dots and carbon nanotubes

K. Zhuravlev, A. Okotrub, T. Duda, 2012 .

Influence of defects on the photoluminescence kinetics in GaN/AlN quantum-dot structures

K. Zhuravlev, V. Mansurov, I. Aleksandrov, 2016 .

Microphotoluminescence of GaN/AlN quantum dots grown by MBE

P. Paskov, P. Holtz, K. Zhuravlev, 2006 .

Changes in the density of nonradiative recombination centers in GaAs/AlGaAs quantum-well structures as a result of treatment in CF4 plasma

D. Zahn, K. Zhuravlev, A. Sokolov, 2002 .

Substitution of Phosphorus at the InP(001) Surface Upon Annealing in an Arsenic Flux

K. Zhuravlev, A. Toropov, D. Dmitriev, 2021, Semiconductors.

Removal of Oxides from the Surface (001)InP in Ultra-High Vacuum in an Arsenic Flux

K. Zhuravlev, A. Toropov, D. Dmitriev, 2020, 2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM).

2D AlN crystal phase formation on (0001) Al2O3 surface by ammonia MBE

T. Malin, K. Zhuravlev, V. Mansurov, 2015 .

Influence of the heterointerface sharpness on exciton recombination dynamics in an ensemble of (In,Al)As/AlAs quantum dots with indirect band-gap

D. Yakovlev, M. Bayer, L. Braginsky, 2011, 1107.4121.

Energy spectrum and structure of thin pseudomorphic InAs quantum wells in an AlAs matrix : Photoluminescence spectra and band-structure calculations

K. Zhuravlev, T. Shamirzaev, A. Gilinsky, 2007 .

Narrowing of ground energy level distribution in an array of InAs/AlAs QDs by post grown annealing

K. Zhuravlev, A. Toropov, A. Gutakovskii, 2006 .

Optical transitions in Ge nanocrystals formed by high-pressure annealing of Ge+ ion implanted SiO2 films

I. Tyschenko, A. Cherkov, R. Yankov, 2004 .

Properties of Ge nanocrystals formed by implantation of Ge+ ions into SiO2 films with subsequent annealing under hydrostatic pressure

A. Cherkov, W. Skorupa, K. Zhuravlev, 2003 .

Numerical modeling of GaAs field-effect transistor characteristics as functions of channel doping profile parameters

K. Zhuravlev, A. Shestakov, 2012, Optoelectronics Instrumentation and Data Processing.

The influence of a doping profile on the characteristics of an ion-implanted GaAs field-effect transistor with a Schottky barrier

K. Zhuravlev, A. Shestakov, 2011 .

Reconstruction phase transition c(4×4) – (1×3) on the (001)InSb surface

K. Zhuravlev, A. Bakarov, V. Mansurov, 2017 .

Influence of substrate and doping profile parameters on characteristics of ion-implanted GaAs Schottky-barrier field-effect transistor (MESFET)

V. A. Kagadei, K. Zhuravlev, V. Arykov, 2010, 2010 IEEE 2nd Russia School and Seminar on Fundamental Problems of Micro/Nanosystems Technologis (MNST).

Enhancement of the intensity of violet and green photoluminescence from Ge+ ion-implanted SiOxNy films caused by hydrostatic pressure during annealing

E. N. Vandyshev, I. Tyschenko, V. Popov, 2001 .

Optimization of heterostructure design for switching pHEMT transistors

K. Zhuravlev, D. Protasov, G. Ayzenshtat, 2023, Materials Science in Semiconductor Processing.

Mechanisms of the Oxides Removal from the InP Surface under Annealing in an Arsenic Flux

K. Zhuravlev, D. Dmitriev, D. Kolosovsky, 2021, Optoelectronics, Instrumentation and Data Processing.

Doping profile influence on characteristics of ion-implanted gaas field effect transistor with the schottky barrier

V. A. Kagadei, K. Zhuravlev, V. Arykov, 2010, 2010 IEEE Region 8 International Conference on Computational Technologies in Electrical and Electronics Engineering (SIBIRCON).

Electron‐Stimulated Aluminum Nitride Crystalline Phase Formation on the Sapphire Surface

T. Malin, K. Zhuravlev, V. Mansurov, 2019, physica status solidi (b).

Optical properties of photodetectors based on wurtzite quantum dot arrays

I. Milošević, M. Damnjanović, S. Grinyaev, 2008 .

RHEED studies of nucleation of Ge islands on Si(001) and optical properties of ultra-small Ge quantum dots

O. Pchelyakov, V. Markov, A. Nikiforov, 2000 .

The role of nitrogen in the formation of luminescent silicon nanoprecipitates during heat treatment of SiO2 layers implanted with Si+ ions

K. Zhuravlev, G. Kachurin, S. G. Yanovskaya, 2001 .

Photoluminescence kinetics slowdown in an ensemble of GaN/AlN quantum dots upon tunneling interaction with defects

K. Zhuravlev, V. Mansurov, I. Aleksandrov, 2016 .

Modification of the surface energy and morphology of GaN monolayers on the AlN surface in an ammonia flow

T. Malin, K. Zhuravlev, Y. E. Maidebura, 2022, Applied Physics Letters.

Wavelength-selective enhancement of the intensity of visible photoluminescence in hydrogen-ion-implanted silicon-on-insulator structures annealed under high pressure

I. Tyschenko, A. Cherkov, V. Popov, 2006 .

Special features of photoluminescence in silicon-on-insulator structures implanted with hydrogen ions

V. Popov, K. Zhuravlev, A. B. Talochkin, 2006 .

Influence of substrate temperature on the morphology of silicon oxide nanowires synthesized using a tin catalyst

A. Zamchiy, K. Zhuravlev, D. Gulyaev, 2016 .

Interaction of excitons with carriers accelerated by the electric field of a surface acoustic wave in type-II GaAs/AlAs superlattices

K. Zhuravlev, D. Gulyaev, 2012 .

Nitridation of an unreconstructed and reconstructed (√31 ×√31)R ± 9° (0001) sapphire surface in an ammonia flow

T. Malin, K. Zhuravlev, V. Mansurov, 2015 .

Chemical kinetics and thermodynamics of the AlN crystalline phase formation on sapphire substrate in ammonia MBE

T. Malin, K. Zhuravlev, V. Mansurov, 2018, Journal of Thermal Analysis and Calorimetry.

Effect of ion dose and annealing mode on photoluminescence from SiO2 implanted with Si ions

I. Tyschenko, V. Volodin, W. Skorupa, 1998 .

Peculiarities of CdS nanocrystal formation at annealing of a Langmuir‐ Blodgett matrix

L. Sveshnikova, K. Zhuravlev, D. Protasov, 2016 .

On the Processes of the Self-Assembly of CdS Nanocrystal Arrays Formed by the Langmuir–Blodgett Technique

K. Zhuravlev, K. Svit, 2019, Semiconductors.

Сavity Effect in Hydrogen Ion Implanted Silicon-On-Insulator Structures

I. Tyschenko, A. Cherkov, V. Popov, 2005 .

Analysis of the AlN phase transition on a sapphire surface within a universal 2D lattice gas model in MBE

T. Malin, K. Zhuravlev, V. Mansurov, 2021 .

AlN growth on sapphire substrate by ammonia MBE

Z. Horváth, B. Pécz, K. Zhuravlev, 2007 .

Formation of nanocrystalline silicon films using high-dose H+ ion implantation into silicon-on-insulator layers with subsequent rapid thermal annealing

I. Tyschenko, V. Popov, K. Zhuravlev, 2004 .

Nature of luminescence of PbS quantum dots synthesized in a Langmuir–Blodgett matrix

K. Zhuravlev, A. Gutakovskii, D. Gulyaev, 2017 .

Annealing effect on the barrier characteristics and interface properties of Au/Pt/Ti/n-InAlAs Schottky contacts

O. Tereshchenko, K. Zhuravlev, A. Gutakovskii, 2023, Surfaces and Interfaces.

Donor-acceptor nature of orange photoluminescence in AlN

T. Malin, K. Zhuravlev, B. Ber, 2020, Semiconductor Science and Technology.

Luminescence and superradiance in electron-beam-excited AlxGa1−xN

V. Solomonov, P. Bokhan, T. Malin, 2014 .

Properties of manganese-doped gallium arsenide layers grown by liquid-phase epitaxy from a bismuth melt

K. Zhuravlev, T. Shamirzaev, N. Yakusheva, 1998 .

High-power InAlAs/InGaAs Schottky barrier photodiodes for analog microwave signal transmission

K. Zhuravlev, A. Gilinsky, A. Chizh, 2022, Journal of Semiconductors.

Mg3N2 nanocrystallites formation during the GaN:Mg layers growth by the NH3-MBE technique

A. N. Smirnov, V. Davydov, T. Malin, 2021, Journal of Crystal Growth.

Growth of AlGaN/GaN heterostructures with a two-dimensional electron gas on AlN/Al2O3 substrates

T. Malin, K. Zhuravlev, A. Kozhukhov, 2013, Optoelectronics Instrumentation and Data Processing.

New impurity-induced defect in heavily zinc-doped GaAs grown by liquid phase epitaxy

I. P. Petrenko, K. Zhuravlev, T. Shamirzaev, 1998 .

Mechanism of photoluminescence of Si nanocrystals fabricated in a SiO2 matrix

K. Zhuravlev, A. Gilinsky, A. Kobitsky, 1998 .

Interplay of Spinodal and Diffusion-Limited Aggregation in Formation of Nanocrystal Assembled 2D Islands

Jiye Fang, K. Zhuravlev, W. Jian, 2010 .

Decay rates of exciton and phonon-assisted recombination in asymmetric GaAs/AlAs type II superlattices

L. Braginsky, K. Zhuravlev, A. Bakarov, 2003 .

Exciton recombination in δ-doped type-II GaAs/AlAs superlattices

K. Zhuravlev, A. Bakarov, A. Toropov, 2002 .

Modeling the operation of field-effect transistors based on GaAs/AlGaAs heterostructures

K. Zhuravlev, A. Shestakov, 2009 .

MATERIALS AND TECHNOLOGIES FOR NANO- AND OPTOELECTRONICS Modeling the Operation of Field-Effect Transistors Based on GaAs/AlGaAs Heterostructures

K. Zhuravlev, A. Shestakov, 2009 .

Tunneling transport through passivated CdS nanocrystal arrays grown by the Langmuir-Blodgett method

L. Sveshnikova, K. Zhuravlev, D. Protasov, 2014 .

Scattering analysis of 2DEG mobility in undoped and doped AlGaN/AlN/GaN heterostructures with an in situ Si 3 N 4 passivation layer

T. Malin, K. Zhuravlev, V. Mansurov, 2016 .

Deep levels and electron transport in AlGaN/GaN heterostructures

I. Antonova, K. Zhuravlev, V. Mansurov, 2008 .

Transport properties of the two‐dimensional electron gas in GaN/AlGaN heterostructures grown by ammonia molecular‐beam epitaxy

K. Zhuravlev, V. Preobrazhenskii, A. G. Pogosov, 2006 .

A silicon donor layer in heavily doped GaN

T. Malin, I. V. Osinnykh, K. Zhuravlev, 2014 .

Nitridation effect on sapphire surface polaritons

E. A. Vinogradov, N. Novikova, V. Yakovlev, 2013 .

EXAFS study of intermixing in GaN/AlN quantum wells

B. Pécz, T. Malin, K. Zhuravlev, 2014, 2014 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO).

Photoelectric characteristics of focal plane arrays based on epitaxial layers of indium antimonide deposited on a heavily doped substrate

V. Fadeev, K. Zhuravlev, P. Vlasov, 2017 .

Growth of Nitride Heteroepitaxial Transistor Structures: from Epitaxy of Buffer Layers to Surface Passivation

T. Malin, K. Zhuravlev, I. Loshkarev, 2020, Optoelectronics, Instrumentation and Data Processing.

Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors

T. Malin, K. Zhuravlev, B. Ber, 2019, Technical Physics Letters.

Quantum dots microstructure by XAFS spectroscopy: GaN/AlN system depending on preparation conditions

W. Bras, K. Zhuravlev, V. Mansurov, 2006 .

Carrier dynamics in InAs/AlAs quantum dots: lack in carrier transfer from wetting layer to quantum dots

B. Dzurňák, F. Trojánek, P. Malý, 2010, Nanotechnology.

Exciton fine structure and spin dynamics in high purity AlGaAs layers

H. Pascher, K. Zhuravlev, T. Shamirzaev, 2004 .

Spin lifetime from Hanle-effect measurements in samples with InAs quantum dots embedded in different AlxGa1−xAs matrices

H. Pascher, K. Zhuravlev, T. Shamirzaev, 2005 .

Structure of interfaces in GaN/AlN and Ge/Si multilayered heterosystems by XAFS spectroscopy

A. Dvurechenskii, T. Malin, K. Zhuravlev, 2016 .

Diffusion and deformations in heterosystems with GaN/AlN superlattices, according to data from EXAFS spectroscopy

B. Pécz, T. Malin, K. Zhuravlev, 2013 .

Photoluminescence kinetics of wurtzite GaN quantum dots in an AlN matrix

K. Zhuravlev, A. Gutakovskii, V. Mansurov, 2005 .

Diffusion in GaN/AlN superlattices: DFT and EXAFS study

B. Pécz, T. Malin, K. Zhuravlev, 2020 .

Stimulated emission in heavily doped Al0.68Ga0.32N:Si structures with external cavity

N. V. Fateev, P. Bokhan, T. Malin, 2022, Journal of Luminescence.

Recombination processes in structures with GaN/ALN quantum dots

K. Zhuravlev, V. Mansurov, I. Aleksandrov, 2016 .

Deep levels and electron transport in AlGaN/GaN heterostructures

I. Antonova, K. Zhuravlev, V. Mansurov, 2008 .

Characterization of MBE‐grown AlGaN layers heavily doped using silane

A. N. Smirnov, V. Davydov, V. Solomonov, 2013 .

Heterointerface point defects in GaN/AlN quantum wells

Yahor V. Lebiadok, Tatyana V. Bezyazychnaya, Konstantin S. Zhuravlev, 2018, Journal of Nanophotonics.

GaN Quantum-Dot Formation by a Temperature Increase in an Ammonia Flow

T. Malin, K. Zhuravlev, Y. E. Maidebura, 2022, Semiconductors.

Annealing effects in light-emitting Si nanostructures formed in SiO2 by ion implantation and transient preheating

Wolfgang Skorupa, Vladimir A. Volodin, Rossen A. Yankov, 1997 .

The influence of impurity profiles on mobility of two-dimensional electron gas in AlGaAs/InGaAs/GaAs heterostructures modulation-doped by donors and acceptors

K. Zhuravlev, D. Protasov, 2017 .

Electrophysical parameter comparison of 2DEG in AlGaN/GaN heterostructures grown by the NH3-MBE technique on sapphire and silicon substrates

A. Kozhukhov, V. Vdovin, T. Malin, 2022, Journal of Crystal Growth.

Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers

A. N. Smirnov, V. Davydov, T. Malin, 2018 .

AlN/GaN heterostructures for normally-off transistors

K. K. Abgaryan, T. Malin, K. Zhuravlev, 2017, Semiconductors (Woodbury, N.Y.).

Thermodynamic and kinetic aspects of AlN crystal formation on (0001)Al2O3 surface by ammonia MBE

T. Malin, K. Zhuravlev, V. Mansurov, 2014 .

A new recombination center in heavily doped GaAs: Zn grown by liquid-phase epitaxy

I. P. Petrenko, K. Zhuravlev, T. Shamirzaev, 1998 .

Broadband Spontaneous and Stimulated Luminescence of Heavily Doped AlxGa1 – xN Structures

N. V. Fateev, P. Bokhan, T. Malin, 2018, Atmospheric and Oceanic Optics.

Power Microwave FETs Using Epitaxial AlGaAs/GaAs Structures

Y. B. Myakishev, K. Zhuravlev, A. Bakarov, 2002 .

INFRARED PHOTOLUMINESCENCE SPECTRA OF PBS NANOPARTICLES PREPARED BY LANGMUIR–BLODGETT AND LASER ABLATION METHODS

J. Stuchlík, Z. Remeš, V. Dřínek, 2014 .

Quantum-Sized Silicon Precipitates in Silicon-Implanted and Pulse-Annealed Silicon Dioxide Films: Photoluminescence and Structural Transformations

A. K. Gutakovsky, K. Leo, I. Tyschenko, 1996 .