H. Schenk

发表

Study of (Al,Ga)N Bragg Mirrors Grown on Al2O3(0001) and Si(111) by Metalorganic Vapor Phase Epitaxy

S. Fernández, F. Calle, E. Feltin, 2001 .

Vertical Cavity InGaN LEDs Grown by MOVPE

E. Feltin, M. Leroux, H. Schenk, 2002 .

Acoustical and Optical Gallium Nitride Waveguides Grown on Si(111) by Metalorganic Vapor Phase Epitaxy

H. Schmidt, M. Weihnacht, E. Feltin, 2001 .

Validity of Vegard’s rule for Al1−xInxN (0.08 < x < 0.28) thin films grown on GaN templates

E. Alves, R. Martin, N. Franco, 2017 .

Comparison of GaInN laser structures grown on different substrates

H. Schenk, A. D. Dräger, A. Hangleiter, 2008 .

Photoluminescence and absorption spectroscopy of silicon-doped InGaN layers

F. Omnès, M. Leroux, H. Schenk, 2001 .

Spectroscopic Studies of InGaN Ternary Alloys

F. Omnès, H. Schenk, P. Mierry, 1999 .

Indium incorporation dynamics into AlInN ternary alloys for laser structures lattice matched to GaN

P. Vennégués, H. Schenk, A. D. Dräger, 2008 .

Influence of 3C–SiC/Si (111) template properties on the strain relaxation in thick GaN films

T. Chassagne, M. Portail, Y. Cordier, 2014 .

Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1 x)N layers as a function of InN content, layer thickness and growth parameters

P. Vennégués, R. Martin, É. Frayssinet, 2012 .

Anomalous composition dependence of the band gap pressure coefficients in In-containing nitride semiconductors

S. Lepkowski, J. Carlin, E. Feltin, 2010 .

In‐clustering effects in InAlN and InGaN revealed by high pressure studies

H. Schenk, T. Suski, I. Gorczyca, 2010 .

Growth of atomically smooth AlN films with a 5:4 coincidence interface on Si(111) by MBE

W. Richter, J. Schulze, U. Kaiser, 1999 .

Molecular-beam epitaxy of a strongly lattice-mismatched heterosystem AlN/Si(111) for application in SAW devices

W. Richter, J. Schulze, M. Weihnacht, 1999 .

The effect of growth condition on the structure of 2H - AlN films deposited on Si(111) by plasma-assisted molecular beam epitaxy

P. D. Brown, W. Richter, C. Humphreys, 1999 .

Epitaxial growth of AlN and GaN on Si(1 1 1) by plasma-assisted molecular beam epitaxy

W. Richter, A. Fissel, H. Schenk, 1999 .

Investigation of two-dimensional growth of AlN(0 0 0 1) on Si(1 1 1) by plasma-assisted molecular beam epitaxy

W. Richter, J. Schulze, U. Kaiser, 1999 .

Growth of thick, continuous GaN layers on 4-in. Si substrates by metalorganic chemical vapor deposition

Daniel Rondi, Eric Frayssinet, Yvon Cordier, 2011 .

Indium incorporation above 800 °C during metalorganic vapor phase epitaxy of InGaN

Pierre Gibart, Bernard Beaumont, Mathieu Leroux, 1999 .

Investigation of structural properties of layered III- nitride semiconductor materials by high resolution X- rays diffraction

A. Beye, H. Schenk, K. Bejtka, 2012 .

Growth of Ain on Si(111) by Plasma-Assisted Molecular Beam Epitaxy: Application to Surface Acoustic Wave Devices

W. Richter, J. Schulze, M. Weihnacht, 1998 .

Delta-Doping of Epitaxial GaN Layers on Large Diameter Si(111) Substrates

M. Kennard, É. Frayssinet, F. Cayrel, 2012 .

Realization of waveguiding epitaxial GaN layers on Si by low-pressure metalorganic vapor phase epitaxy

E. Feltin, P. Vennégués, H. Schenk, 2003 .

Growth of thick GaN layers on 4-in. and 6-in. silicon (111) by metal-organic vapor phase epitaxy

Eric Frayssinet, Yvon Cordier, Y. Cordier, 2011 .

Luminescence and absorption in InGaN epitaxial layers and the van Roosbroeck–Shockley relation

M. Leroux, H. Schenk, P. Mierry, 2000 .

Optoelectronic properties of GaN epilayers in the region of yellow luminescence

H. Strunk, A. Cavallini, A. Castaldini, 2006 .

Three-dimensionally nucleated growth of gallium nitride by low-pressure metalorganic vapour phase epitaxy

P. Vennégués, J. Christen, H. Schenk, 2003 .

Cathodoluminescence of epitaxial GaN and ZnO thin films for scintillator applications

A. Dadgar, A. Krost, H. Schenk, 2009 .

Band gap narrowing and radiative efficiency of silicon doped GaN

D. Rich, H. Schenk, A. Berezin, 2008 .

AlInN optical confinement layers for edge emitting group III‐nitride laser structures

B. Corbett, P. Vennégués, P. Demolon, 2009 .

Group III‐nitride distributed Bragg reflectors and resonant cavities grown on bulk GaN crystals by metalorganic vapour phase epitaxy

J. Muszalski, P. Perlin, R. Czernecki, 2004 .

In situ growth monitoring of distributed GaN–AlGaN Bragg reflectors by metalorganic vapor phase epitaxy

S. Fernández, F. Calle, E. Feltin, 2002 .

Growth of columnar aluminum nitride layers on Si(111) by molecular beam epitaxy

Andreas Fissel, W. Richter, Ute Kaiser, 1997 .