M. Vaille

发表

Study of (Al,Ga)N Bragg Mirrors Grown on Al2O3(0001) and Si(111) by Metalorganic Vapor Phase Epitaxy

S. Fernández, F. Calle, E. Feltin, 2001 .

Buffer free direct growth of GaN on 6H–SiC by metalorganic vapor phase epitaxy

M. Leroux, M. Laügt, M. Vaille, 2000 .

Vertical Cavity InGaN LEDs Grown by MOVPE

E. Feltin, M. Leroux, H. Schenk, 2002 .

Acoustical and Optical Gallium Nitride Waveguides Grown on Si(111) by Metalorganic Vapor Phase Epitaxy

H. Schmidt, M. Weihnacht, E. Feltin, 2001 .

Homoepitaxial layers of gallium nitride grown by metalorganic vapour phase epitaxy

M. Boćkowski, K. Pakuła, M. Leszczynski, 1997 .

Comparative study of GaN layers grown on insulating AlN and conductive AlGaN buffer layers

P. Vennégués, M. Laügt, M. Vaille, 1999 .

Lateral overgrowth of high quality GaN layers on GaN/Al2O3 patterned substrates by halide vapour-phase epitaxy

S. Haffouz, M. Vaille, B. Beaumont, 1998 .

High quality GaN grown by MOVPE

B. Jani, M. Vaille, B. Beaumont, 1997 .

High quality ELO-GaN layers on GaN/Al2O3 patterned substrates by halide vapour phase epitaxy

P. Vennégués, S. Haffouz, M. Vaille, 1999 .

A Two-Step Method for Epitaxial Lateral Overgrowth of GaN

P. Vennégués, M. Vaille, B. Beaumont, 1999 .

Lateral overgrowth of GaN on patterned GaN/sapphire substrate via selective metal organic vapour phase epitaxy: a route to produce self supported GaN substrates

S. Haffouz, M. Vaille, B. Beaumont, 1998 .

Alternative N precursors and Mg doped GaN grown by MOVPE

B. Jani, M. Vaille, B. Beaumont, 1996 .

Raman investigations of reaction process in MOVPE

Y. Monteil, J. Bouix, M. Vaille, 1986 .

Study of open-core dislocations in GaN films on (0001) sapphire

P. Vennégués, M. Vaille, B. Beaumont, 1997 .

Epitaxial lateral overgrowth of GaN on Si (111)

Pierre Gibart, Bernard Beaumont, Eric Feltin, 2003 .

Reduction mechanisms for defect densities in GaN using one- or two-step epitaxial lateral overgrowth methods

P. Vennégués, M. Vaille, B. Beaumont, 2000 .

Influence of in situ sapphire surface preparation and carrier gas on the growth mode of GaN in MOVPE

P. Vennégués, S. Haffouz, M. Vaille, 1998 .

Raman investigations on AsH3 decomposition in MOVPE

Y. Monteil, J. Bouix, M. Vaille, 1988 .

Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy

S. Haffouz, Pierre Gibart, Bernard Beaumont, 1998 .

Microstructural analysis of III–V nitrides grown on 6H–SiC by metal–organic vapour phase epitaxy (MOVPE)

Pierre Gibart, Bernard Beaumont, P. Vennégués, 2000 .

Microstructure of GaN epitaxial films at different stages of the growth process on sapphire (0 0 0 1)

P. Vennégués, M. Vaille, B. Beaumont, 1997 .

In situ growth monitoring of distributed GaN–AlGaN Bragg reflectors by metalorganic vapor phase epitaxy

S. Fernández, F. Calle, E. Feltin, 2002 .