T. Moon

发表

Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

C. Hwang, M. Park, Han Joon Kim, 2013 .

Ferroelectricity in undoped-HfO2 thin films induced by deposition temperature control during atomic layer deposition

C. Hwang, Soonsil Hyun, M. Park, 2016 .

Dispersion in Ferroelectric Switching Performance of Polycrystalline Hf0.5Zr0.5O2 Thin Films.

Young Jae Kwon, C. Hwang, S. Hyun, 2018, ACS applied materials & interfaces.

Giant Negative Electrocaloric Effects of Hf0.5Zr0.5O2 Thin Films

S. Hyun, C. S. Hwang, M. Park, 2016, Advanced materials.

Thin HfxZr1‐xO2 Films: A New Lead‐Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability

C. S. Hwang, M. Park, Han Joon Kim, 2014 .

Toward a multifunctional monolithic device based on pyroelectricity and the electrocaloric effect of thin antiferroelectric HfxZr1−xO2 films

C. Hwang, M. Park, Han Joon Kim, 2015 .

Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films

Thomas Mikolajick, Uwe Schroeder, Cheol Seong Hwang, 2015, Advanced materials.

A comprehensive study on the mechanism of ferroelectric phase formation in hafnia-zirconia nanolaminates and superlattices

C. Hwang, Hyun Woo Park, S. Hyun, 2019 .

Study on the internal field and conduction mechanism of atomic layer deposited ferroelectric Hf0.5Zr0.5O2 thin films

C. Hwang, Soonsil Hyun, M. Park, 2015 .

Study on the size effect in Hf0.5Zr0.5O2 films thinner than 8 nm before and after wake-up field cycling

Cheol Seong Hwang, Taehwan Moon, Min Hyuk Park, 2015 .

Effect of Zr Content on the Wake-Up Effect in Hf1-xZrxO2 Films.

Uwe Schroeder, Cheol Seong Hwang, Taehwan Moon, 2016, ACS applied materials & interfaces.

Ferroelectric properties and switching endurance of Hf0.5Zr0.5O2 films on TiN bottom and TiN or RuO2 top electrodes

C. Hwang, W. Jeon, M. Park, 2014 .

A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf0.5Zr0.5O2 Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) Precursors

C. Hwang, S. Hyun, M. Park, 2020, Nanoscale Research Letters.

Nucleation‐Limited Ferroelectric Orthorhombic Phase Formation in Hf0.5Zr0.5O2 Thin Films

C. Hwang, S. Hyun, H. Kim, 2018, Advanced Electronic Materials.

Morphotropic Phase Boundary of Hf1- xZr xO2 Thin Films for Dynamic Random Access Memories.

C. Hwang, S. Hyun, M. Park, 2018, ACS applied materials & interfaces.

Scale-up and optimization of HfO2-ZrO2 solid solution thin films for the electrostatic supercapacitors

Cheol Seong Hwang, Taehwan Moon, Min Hyuk Park, 2017 .

Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films by an insertion of Al2O3 interlayer

C. Hwang, W. Jeon, M. Park, 2014 .

Characterization of a 2D Electron Gas at the Interface of Atomic‐Layer Deposited Al2O3/ZnO Thin Films for a Field‐Effect Transistor

Hyun Jae Lee, C. Hwang, S. Hyun, 2020, Advanced Electronic Materials.

Time-Dependent Negative Capacitance Effects in Al2O3/BaTiO3 Bilayers.

Young Jae Kwon, C. Hwang, Hiroyuki Yamada, 2016, Nano letters.

Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al2O3/SrTiO3 Interface

Hyun Jae Lee, C. Hwang, S. Hyun, 2020, Advanced Electronic Materials.

Hybrid Deep Learning Crystallographic Mapping of Polymorphic Phases in Polycrystalline Hf0.5 Zr0.5 O2 Thin Films.

D. Yang, H. Jeong, Eunha Lee, 2022, Small.

Unveiling the Origin of Robust Ferroelectricity in Sub-2 nm Hafnium Zirconium Oxide Films.

Hyun Hwi Lee, Hyoungsub Kim, Eunha Lee, 2021, ACS applied materials & interfaces.

2D Electron Gas at the Interface of Atomic‐Layer‐Deposited Al2O3/TiO2 on SrTiO3 Single Crystal Substrate

Hyun Jae Lee, C. Hwang, Cheol Hyun An, 2018, Advanced Electronic Materials.

Large remnant polarization and great reliability characteristics in W/HZO/W ferroelectric capacitors

J. Yang, R. Midya, Qing Wu, 2022, Frontiers in Materials.

Unexpectedly low barrier of ferroelectric switching in HfO2 via topological domain walls

Sunghyun Kim, H. Bae, T. Moon, 2021, Materials Today.

Research Update: Diode performance of the Pt/Al2O3/two-dimensional electron gas/SrTiO3 structure and its time-dependent resistance evolution

C. Hwang, S. Hyun, Sang Woon Lee, 2017 .

Two-step polarization switching mediated by a nonpolar intermediate phase in Hf0.4Zr0.6O2 thin films.

C. Hwang, S. Hyun, M. Park, 2016, Nanoscale.

Preparation and characterization of ferroelectric Hf0.5Zr0.5O2 thin films grown by reactive sputtering

Cheol Seong Hwang, Taehwan Moon, Min Hyuk Park, 2017, Nanotechnology.

Composition, Microstructure, and Electrical Performance of Sputtered SnO Thin Films for p-Type Oxide Semiconductor.

C. Hwang, Young‐Chang Joo, D. Cho, 2018, ACS applied materials & interfaces.

In Operando Optical Tracking of Oxygen Vacancy Migration and Phase Change in few Nanometers Ferroelectric HZO Memories

B. Monserrat, J. MacManus‐Driscoll, H. Bae, 2023, Advanced Functional Materials.

The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity

C. Hwang, M. Park, Han Joon Kim, 2014 .

Voltage Drop in a Ferroelectric Single Layer Capacitor by Retarded Domain Nucleation.

S. Hyun, C. S. Hwang, M. Park, 2017, Nano letters.

Frustration of Negative Capacitance in Al2O3/BaTiO3 Bilayer Structure

Doo Seok Jeong, Cheol Seong Hwang, Hiroyuki Yamada, 2016, Scientific Reports.

Effect of the annealing temperature of thin Hf0.3Zr0.7O2 films on their energy storage behavior

C. Hwang, M. Park, Han Joon Kim, 2014 .

A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2 films by pulse-switching measurement.

C. Hwang, S. Hyun, M. Park, 2016, Nanoscale.

Transient Negative Capacitance Effect in Atomic‐Layer‐Deposited Al2O3/Hf0.3Zr0.7O2 Bilayer Thin Film

Young Jae Kwon, C. Hwang, S. Hyun, 2019, Advanced Functional Materials.

Interfacial charge-induced polarization switching in Al2O3/Pb(Zr,Ti)O3 bi-layer

C. Hwang, S. Hyun, W. Jeon, 2015 .

Study on the degradation mechanism of the ferroelectric properties of thin Hf0.5Zr0.5O2 films on TiN and Ir electrodes

C. Hwang, M. Park, Han Joon Kim, 2014 .

Understanding the formation of the metastable ferroelectric phase in hafnia-zirconia solid solution thin films.

C. Hwang, T. Mikolajick, U. Schroeder, 2018, Nanoscale.

Threshold Voltage Modulation in a Transistor with a Two-Dimensional Electron Gas Channel at the Interface between Al2O3 and Sub-5 nm ZnO Films

Hyun Jae Lee, C. Hwang, T. Moon, 2021, ACS Applied Electronic Materials.

Wake-Up and Endurance Characteristics in Hf0.5Zr0.5O2-Based Metal-Ferroelectric-Metal Capacitor Depending on the Crystal Orientation of the TiN Bottom Electrodes

W. Jeon, T. Moon, S. Choi, 2023, IEEE Transactions on Electron Devices.

Negative differential capacitance in ultrathin ferroelectric hafnia

B. Kuh, Eunha Lee, Hyun-Yong Lee, 2023, Nature Electronics.

Alternative interpretations for decreasing voltage with increasing charge in ferroelectric capacitors

Jung-Hae Choi, Seul Ji Song, Yu Jin Kim, 2016, Scientific Reports.

Modeling growth rate of HfO2 thin films grown by metal-organic molecular beam epitaxy

Myoung-Seok Kim, Young-Don Ko, Tae-Houng Moon, 2006, Microelectron. J..

2D Electronics: Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al 2 O 3 /SrTiO 3 Interface (Adv. Electron. Mater. 6/2020)

C. Hwang, S. Hyun, Hyunjae Lee, 2020 .

Two-step polarization switching mediated by a nonpolar intermediate phase in Hf0.4Zr0.6O2 thin films.

C. Hwang, S. Hyun, M. Park, 2016, Nanoscale.

Preparation and characterization of ferroelectric Hf0.5Zr0.5O2 thin films grown by reactive sputtering

S. Hyun, C. S. Hwang, M. Park, 2017, Nanotechnology.

Time-Dependent Negative Capacitance Effects in Al2O3/BaTiO3 Bilayers.

Young Jae Kwon, C. Hwang, Hiroyuki Yamada, 2016, Nano letters (Print).

Sub-ns Polarization Switching in 25nm FE FinFET toward Post CPU and Spatial-Energetic Mapping of Traps for Enhanced Endurance

H. Bae, J. Heo, T. Moon, 2020, 2020 IEEE International Electron Devices Meeting (IEDM).

Understanding the formation of the metastable ferroelectric phase in hafnia-zirconia solid solution thin films.

C. Hwang, T. Mikolajick, U. Schroeder, 2018, Nanoscale.