Jiazhu He

发表

Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature

P. Cao, Youming Lu, K. Ang, 2016, Scientific Reports.

AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating

P. Cao, Youming Lu, Shaojun Chen, 2015, Scientific Reports.

Monolayer WxMo1−xS2 Grown by Atmospheric Pressure Chemical Vapor Deposition: Bandgap Engineering and Field Effect Transistors

P. Cao, Youming Lu, K. Ang, 2017 .

Band alignment of ZnO/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy

Y. Zhang, Youming Lu, F. Jia, 2016 .

Band alignment of HfO2/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy: Effect of CHF3 treatment

P. Cao, Youming Lu, F. Jia, 2015 .

Band alignment of atomic layer deposited TiO 2 /multilayer MoS 2 interface determined by x -ray photoelectron spectroscopy

K. Ang, Wenjie Yu, Xinke Liu, 2017 .

Low temperature carrier transport study of monolayer MoS2 field effect transistors prepared by chemical vapor deposition under an atmospheric pressure

P. Cao, Youming Lu, K. Ang, 2015 .

Band alignment of atomic layer deposited high-k Al2O3/multilayer MoS2 interface determined by X-ray photoelectron spectroscopy

K. Ang, Wenjie Yu, Xinke Liu, 2015 .

Electron-electron interaction and correlation-induced two density waves with different Fermi velocities in graphene quantum dots

Jiazhu He, Yafei Ren, Lin He, 2023, Physical Review B.