P. Wright

发表

Thickness limitations of SiO/sub 2/ gate dielectrics for MOS ULSI

K. Saraswat, P. Wright, 1990 .

Limits of electro-absorption in high purity GaAs, and the optimisation of waveguide devices

J. Heaton, J. Birbeck, D. Wight, 1988 .

Low-resistance submicrometer contacts to silicon

K. Saraswat, P. Wright, W. M. Loh, 1988 .

Substrate instability during the LPE growth of (Ga, In) As alloys on InAs substrates

P. Wright, O. Dosser, M. Astles, 1981 .

Electroluminescence from films of ZnS:Mn prepared by organometallic chemical vapor deposition

P. Wright, J. Kirton, A. Cattell, 1983, IEEE Transactions on Electron Devices.

Interpretation of the temperature-dependent behaviour of the emission from isoelectronic tellurium centres in epitaxial ZnSe1-xTex

P. Wright, J. Davies, J. E. Nicholls, 1992 .

The calibration of the strength of the localized vibrational modes of silicon impurities in epitaxial GaAs revealed by infrared absorption and Raman scattering

J. Harris, M. Ramsteiner, R. Murray, 1989 .

The optical properties of wide bandgap binary II-VI superlattices

P. J. Parbrook, B. Henderson, P. Wright, 1992 .

2 dimensional electron gas uniformity of GaN HFET layers on SiC

T. Martin, M. Uren, D. Wallis, 2012 .

Spectral and spatial resolution of photopumped II–VI single quantum well lasers

D. Bagnall, P. Wright, K. O'Donnell, 1995 .

Exciton binding energies in II–VI compound strained layer superlattices

P. J. Parbrook, B. Henderson, P. Wright, 1991 .

Nitridation and post-nitridation anneals of SiO/sub 2/ for ultrathin dielectrics

Krishna C. Saraswat, P. J. Wright, Ahmad Kermani, 1990 .

Single wafer in-situ multiprocessing

K. Saraswat, M. Moslehi, S. Wood, 1989, International Symposium on VLSI Technology, Systems and Applications,.

The effect of fluorine in silicon dioxide gate dielectrics

Krishna C. Saraswat, P. J. Wright, K. Saraswat, 1989 .

Hot-carrier-degradation characteristics for fluorine-incorporated nMOSFET's

Krishna C. Saraswat, N. Kasai, P. J. Wright, 1990 .

The growth of thin films of the magnetic ternary alloys Fe3Ga2-xAsx by metalorganic chemical vapour deposition

I. R. Harris, N. A. Smith, P. Wright, 1995 .

Metalorganic chemical vapour deposition of manganese arsenide antimonide for thin film magnetic applications

I. R. Harris, N. A. Smith, P. Wright, 1995 .

Metalorganic chemical vapour deposition of manganese arsenide for thin film magnetic applications

I. R. Harris, N. A. Smith, P. Wright, 1994 .

Liquid injection metal organic chemical vapour deposition of lead–scandium–tantalate thin films for infrared devices

C. Reeves, D. Williams, P. Wright, 2000 .

The growth of ZnSe / CdSe and ZnS / CdS strained layer superlattices by MOVPE

P. J. Parbrook, B. Henderson, P. Wright, 1990 .

Analysis of high purity metalorganics by ICP emission spectrometry

P. Wright, A. Moore, M. Scott, 1986 .

Liquid injection metal organic chemical vapour deposition of nickel zinc ferrite thin films

C. Reeves, P. Wright, A. C. Jones, 1998 .

Control of Growth Dynamics by Molecular Design in the MOCVD of Electronic Ceramics

D. Williams, P. O’Brien, P. Wright, 1997 .

Synthesis and characterisation of two novel titanium isopropoxides stabilised with a chelating alkoxide: their use in the liquid injection MOCVD of titanium dioxide thin films

P. O’Brien, M. Pemble, P. Wright, 1998 .

Vapour-phase transport of barium β-diketonates in the deposition of oxides and the isolation and structural characterization of a novel hexameric cluster of 2,2,6,6-tetramethylheptane-3,5-dionatobarium(II)

P. O’Brien, P. Wright, A. C. Jones, 1993 .

Liquid Injection MOCVD of Zirconium Dioxide Using a Novel Mixed Ligand Zirconium Precursor

P. O’Brien, P. Wright, A. C. Jones, 1998 .

The growth by MOCVD of low-doped p-Type GaAs using a dimethylzinc adduct

P. Wright, A. C. Jones, B. Cockayne, 1988 .

The unusual thermal stabilization of MOCVD precursors by the dibenzoyl methanate group: Liquid injection MOCVD of tantalum oxide and niobium oxide using M(OEt)4(dbm) precursors

P. Wright, A. Steiner, A. C. Jones, 2002 .

Carbonyl sulfide (OCS) as a sulfur-containing precursor in MOCVD: a study of mixtures of Me2Cd and OCS in the gas and solid phases and their use in MOCVD

P. Wright, M. Almond, D. A. Rice, 1996 .

The organometallic chemical vapour deposition of ZnS and ZnSe at atmospheric pressure

P. Wright, B. Cockayne, 1982 .

MOCVD of Zirconia Thin Films by Direct Liquid Injection Using a New Class of Zirconium Precursor

P. O’Brien, P. Wright, A. C. Jones, 1998 .

Manganese doping of ZnS and ZnSe epitaxial layers grown by organometallic chemical vapour deposition

P. J. Dean, G. Blackmore, P. Wright, 1982 .

An epitaxial thin film ZnS:Mn DC electroluminescent device

G. Russell, J. Woods, A. Brinkman, 1987 .

Optical properties of undoped organometallic grown ZnSe and ZnS

M. S. Skolnick, P. J. Dean, M. Skolnick, 1982 .

Single crystal growth by MOCVD of zinc-based chalcogenides using new group II adduct sources

P. Wright, A. C. Jones, B. Cockayne, 1988 .

The metalorganic chemical vapour deposition and photoluminescence of tellurium-doped ZnS/CdS: Te strained layer superlattices

P. Wright, J. Davies, J. E. Nicholls, 1994 .

Photoluminescence of wide bandgap II–VI superlattices

P. J. Parbrook, B. Henderson, P. Wright, 1990 .

The development of a European industrial source of GaN epitaxy for RF applications at IQE Europe

A. Pooth, P. Wright, R. Blunt, 2014, 2014 9th European Microwave Integrated Circuit Conference.

Metalorganic chemical vapour deposition (MOCVD) of zirconia and lead zirconate titanate using a novel zirconium precursor

P. O’Brien, P. Wright, A. C. Jones, 1999 .

Electrical characteristics and irradiation sensitivity of IGFETs with rapidly grown ultrathin gate dielectrics

K. Saraswat, M. Moslehi, P. Wright, 1988 .

Developing the Chemistry of Novel Scandium β‐Diketonates for the MOCVD of Scandium‐Containing Oxides

P. O’Brien, P. Wright, A. C. Jones, 1999 .

Overexcited CdSe quantum well lasers

D. Bagnall, P. Wright, P. G. Middleton, 1996 .

Phonon-assisted exciton luminescence in a CdSe-ZnSe disordered superlattice

P. J. Parbrook, B. Henderson, P. Wright, 1992 .

Metalorganic chemical vapour deposition of wide band gap II–VI compounds

P. Wright, B. Cockyane, 1984 .

(Dark line defects, bright line lasers)‐microscopic studies of single‐shot lasing in CdSe quantum wells

D. Bagnall, P. Wright, K. O'Donnell, 1995 .

Critical thickness of common-anion II–VI strained layer superlattices (SLSs)

P. J. Parbrook, B. Henderson, P. Wright, 1992 .

Atmospheric pressure metalorganic chemical vapour deposition growth and optical studies of ZnSe1−xTex thin film alloys

P. Wright, J. Davies, M. Halsall, 1992 .

Structure of hexagonal and cubic CdS heteroepitaxial layers on GaAs studied by transmission electron microscopy

P. Parbrook, P. Wright, A. Cullis, 1989 .

The growth of CdS, CdSe and CdSSe alloys by MOCVD using dimethylcadmium dioxan adducts

P. O’Brien, P. Wright, A. C. Jones, 1989 .

Growth and assessment of CdS and CdSe layers produced on GaAs by metalorganic chemical vapour deposition

G. Russell, P. Wright, J. Davies, 1988 .

Metal organic chemical vapor deposition (MOCVD) of oxides and ferroelectric materials

D. Williams, P. Wright, P. Lane, 2002 .

Electron beam excitation and profiling of strained CdS epilayers grown by metalorganic vapour phase epitaxy on GaAs(111)A, GaAs(100), ZnSe(100) and ZnS(100) substrates

P. J. Parbrook, B. Henderson, P. Wright, 1992 .

CdS/CdSe intrinsic Stark superlattices

J. J. Davies, Matthew P. Halsall, B. Cockayne, 1992 .

The growth of ZnSe and other wide-bandgap II-VI semiconductors by MOCVD

P. J. Parbrook, B. Henderson, P. Wright, 1991 .

CONTROL OF PREREACTION IN THE METALORGANIC CHEMICAL VAPOUR DEPOSITION OF ZINC- AND CADMIUM-BASED CHALCOGENIDES

P. J. Parbrook, P. Wright, A. C. Jones, 1991 .

Precursors for II–VI semiconductors: requirements and developments

P. Wright, A. C. Jones, B. Cockayne, 1991 .

The growth of CdS and CdSe alloys by MOCVD using a new dimethylcadmium adduct

S. Rushworth, P. O’Brien, P. Wright, 1989 .

CdS and CdSe single and multilayer structures grown on GaAs

P. Wright, J. Davies, M. Halsall, 1989 .

LETTER TO THE EDITOR: CdS/CdSe strained layer superlattices grown by MOCVD

P. Wright, J. Davies, M. Halsall, 1988 .

MOVPE growth of CdxZn1-xS

A. Williams, P. Wright, B. Cockayne, 1985 .

Interdiffusion in wide-bandgap Zn(Cd)S(Se) strained layer superlattices

P. J. Parbrook, B. Henderson, P. Wright, 1991 .

Growth of II–VI compounds by metal-organic chemical vapour deposition. Structural characterisation of dimethylcadmium-N,N,N′,N′-tetramethylethane-1,2-diamine by gas-phase electron diffraction and its use in the growth of epitaxial layers of CdS and CdSe upon GaAs

P. Wright, M. Almond, D. A. Rice, 1991 .

A structural and compositional analysis of interfaces in ZnSe0.94S0.06 layers grown on to GaAs by OMCVD

G. Blackmore, P. Wright, T. Ng, 1984 .

Luminescence of ZnSe/ZnS superlattices

P. J. Parbrook, C. Klingshirn, P. Wright, 1991 .

High resolution transmission electron microscopy (HRTEM) of interfaces in epitaxial ZnSeyS1 − y grown by MOCVD

P. Wright, T. Ng, A. Wright, 1984 .

MOCVD growth and characterisation of ZnSe/ZnS electroluminescent mis structures

G. Russell, J. Woods, A. Brinkman, 1986 .

Interdiffusion characteristics of constituent atoms during the MOCVD growth of wide band gap II–VI multilayer structures

A. Williams, G. Blackmore, P. Wright, 1986 .

High resolution transmission and analytical electron microscopy for the characterisation of epilayers and interfaces in MOVPE grown ZnSe1−ySy

P. Wright, T. Ng, A. Wright, 1985 .

High resolution transmission electron microscopy (HRTEM) of epitaxially grown ZnSe and ZnSe/GaAs interfaces

P. Wright, T. Ng, B. Cockayne, 1984 .

Optical absorption of ZnSe-ZnS strained layer superlattices

P. J. Parbrook, B. Henderson, P. Wright, 1991 .

Studies of the Ga1-xInxAs1-ySby quaternary alloy system I. liquid-phase epitaxial growth and assessment

A. Williams, P. Wright, M. Astles, 1986 .

MOCVD layer growth of ZnSe and ZnS/ZnSe multiple layers using nitrogen containing adducts of dimethylzinc

P. J. Parbrook, P. O’Brien, P. Wright, 1990 .

Spatial distribution of the luminescence in GaN thin films

David P. Bour, Fernando Ponce, P. J. Wright, 1996 .

Photoluminescence of CdS/CdSe wurtzite superlattices and evidence for type II behaviour modified by piezoelectric fields

P. Wright, J. Davies, M. Halsall, 1991 .

Spectroscopic evidence for piezoelectric effects in wurtzite CdS/CdSe strained-layer superlattices

P. Wright, J. Davies, M. Halsall, 1990 .

Anodic oxidation of InP and the quaternary alloy GaxIn1-xAsyP1-y

P. Wright, J. Williams, S. E. Morsi, 1978 .

The MOCVD growth without prereaction of ZnSe and ZnS layers

P. J. Parbrook, B. Henderson, P. Wright, 1989 .

Crystal Structure of Bi(OCMe2CH2OMe)3 and Its Use in the MOCVD of Bi2O3

P. Williams, P. Wright, A. Steiner, 2001 .

MOCVD layer growth of ZnSe using a new zinc source

A. Williams, P. Wright, A. C. Jones, 1987 .

Growth of AlxGa1-xAs by MOVPE using alternative alkylaluminium precursors

J. Roberts, P. Wright, A. C. Jones, 1990 .

Growth of AlxGa1−xAs by MOVPE using a new alkylaluminium precursor

C. Button, J. Roberts, S. Rushworth, 1989 .

The use of heterocyclic compounds in the organometallic chemical vapour deposition of epitaxial ZnS, ZnSe and ZnO

P. Wright, R. Griffiths, B. Cockayne, 1984 .

Metal Organic CVD of Cobalt Thin Films Using Cobalt Tricarbonyl Nitrosyl

C. Reeves, P. Wright, A. D. Pitt, 1998 .

Photoluminescence studies of CdS/CdSe wurtzite superlattices; Evidence for large piezoelectric effects

P. Wright, J. Davies, M. Halsall, 1990 .

Growth of iron, nickel, and permalloy thin films by MOCVD for use in magnetoresistive sensors

I. R. Harris, N. A. Smith, M. Ward, 1997 .

The Growth of Thin Layers by MOCVD of Wide Band Gap II-VI Compounds

P. Wright, B. Cockayne, 1989 .

The growth by MOCVD using new group VI sources and assessment by HRTEM and Cl of Zn-based II–VI single crystal layers

M. Skolnick, P. Wright, T. Ng, 1985 .

Exciton recombination processes in zinc selenide

P. J. Dean, P. Wright, B. Cockayne, 1983 .

Electron beam pumping of CdZnSe quantum well laser structures using a variable energy electron beam

J. T. Mullins, D. Bagnall, P. Wright, 1996 .

Propylene sulfide as a sulfur-containing precursor in MOCVD: study of mixtures of Me2Cd and propylene sulfide in the gas, liquid and solid phases and their use in MOCVD

P. Wright, M. Almond, D. A. Rice, 1995 .

Cathodoluminescence imaging and spectroscopy of dislocations in Si and Si1−xGex alloys

P. Wright, E. C. Lightowlers, V. Higgs, 1992 .

MOCVD of Strontium Tantalate Thin Films Using Novel Bimetallic Alkoxide Precursors

P. O’Brien, P. Wright, A. C. Jones, 1999 .

The growth of diffusion doped ZnSe: Te epilayers by atmospheric pressure metalorganic chemical vapour deposition

P. Wright, J. Davies, J. E. Nicholls, 1993 .

Magnetic and electrical characteristics of MnAs films grown by metalorganic chemical vapour deposition

I. R. Harris, N. A. Smith, P. Wright, 1997 .

The optoelectronic properties of donors in organo-metallic grown zinc selenide

P. J. Dean, P. Wright, M. Young, 1983 .

Spatial distribution of electroluminescence in ZnSe diodes with epitaxial I layer

G. Russell, J. Woods, A. Brinkman, 1986 .

A new technology for epitaxial II-VI compound semiconductor devices

G. Russell, J. Woods, A. Brinkman, 1987, IEEE Transactions on Electron Devices.

Characterisation of Epitaxial MBE and MOCVD GaAs DOPED with Donors or Acceptors Using FTIR Spectroscopy

J. Harris, R. Murray, P. Wright, 1987 .

Single Wafer Rapid Thermal Multiprocessing

Mehrdad M. Moslehi, Krishna C. Saraswat, S. C. Wood, 1989 .

Electron beam excitation of II?VI compound strained layer superlattices

P. J. Parbrook, B. Henderson, P. Wright, 1991 .