J. Ponpon

发表

Open‐circuit voltage of MIS silicon solar cells

P. Siffert, J. Ponpon, 1976 .

Large area, high resolution analysis of surface roughness of semiconductors using interference microscopy

Eric Fogarassy, Paul Montgomery, A. Benatmane, 2002 .

Semiconductor detectors for 2D X-ray imaging

J. Ponpon, 2005 .

Textured α-HgI 2 ceramics for sensitive X-ray detection

P. Barboux, L. Binet, D. Gourier, 2016 .

COMPARISON OF GENERATION AND RECOMBINATION LIFETIMES IN HIGH-RESISTIVITY SILICON

J. Fontaine, P. Siffert, J. Schunck, 1994 .

Study of trapping in mercuric iodide by thermally stimulated current measurements

P. Siffert, J. Muller, R. Stuck, 1976 .

Diffusion of phosphorus implanted in germanium

S. Schmitt, J. Ponpon, D. Mathiot, 2008 .

Measurement of barrier height on etched p-type cadmium telluride

P. Siffert, J. Ponpon, M. Saraphy, 1980 .

Random and channeled energy loss in thin germanium and silicon crystals for positive and negative 2-15-GeV/c pions, kaons, and protons

G. Charpak, F. Sauli, P. Siffert, 1978 .

A solid ionization chamber operated at 20 mK

A. Barbier, G. Chardin, J. Ponpon, 1996 .

Systematic study of massive germanium pin diode detectors at 20 mK

A. Barbier, G. Chardin, J. Ponpon, 1996 .

Channeling of protons, pions and deuterons in the GeV region

G. Charpak, F. Sauli, J. Golovchenko, 1977 .

Implantation of phosphorous and arsenic ions in germanium

J. Ponpon, K. Benourhazi, 1992 .

Electrical properties of solid iodo mercurates resulting from the reaction of HgI2 with alcaline iodides

J. Ponpon, M. Amann, 2005 .

Photoetching effects in mercuric iodide

P. Montgomery, J. Ponpon, M. Sieskind, 2000 .

Preliminary results on mercuric iodide nuclear radiation detectors

P. Siffert, R. Stuck, J. Ponpon, 1974 .

Temperature dependence of the average energy per electron-hole pair in Silicon and Germanium

P. Siffert, R. Stuck, J. Ponpon, 1973 .

Evolution with time of the surface properties of high-purity germanium

J. Ponpon, 2001 .

Formation of palladium and titanium silicides by rapid thermal annealing

P. Siffert, A. Grob, J. Grob, 1985 .

Formation of palladium silicide by rapid thermal annealing

A. Grob, J. Grob, J. Ponpon, 1984 .

Rapid thermal annealing and titanium silicide formation

A. Grob, J. Grob, R. Stuck, 1985 .

A review of ohmic and rectifying contacts on cadmium telluride

J. Ponpon, 1985 .

Properties of Vapour Phase Grown Mercuric Iodide Single Crystal Detectors

P. Siffert, R. Stuck, J. Ponpon, 1975, IEEE Transactions on Nuclear Science.

Comparison of TSC measurements performed on PbI2 samples prepared in different ways

J. Ponpon, 2007 .

Behaviour of implanted arsenic during rapid thermal annealing of Ti on Si

R. Stuck, J. Ponpon, A. Saulnier, 1987 .

Oxygen behavior during titanium silicide formation by rapid thermal annealing

R. Pantel, J. Ponpon, D. Levy, 1987 .

Nuclear interactions for 15 GeV/c protons and pions under random and channeling conditions in germanium single crystals

G. Charpak, F. Sauli, J. Golovchenko, 1978 .

Channelling effects for 15 GeV/c negative pions

G. Charpak, F. Sauli, P. Siffert, 1978 .

Ionization loss of channeled 1. 35-GeV/c protons and pions

G. Charpak, F. Sauli, J. Golovchenko, 1976 .

Influence of channeling on scattering of 2–15 GeV/c protons, π+, and π− incident on Si and Ge crystals

G. Charpak, F. Sauli, P. Siffert, 1980 .

Role of oxygen in the mechanism of formation of Schottky diodes

P. Siffert, J. Ponpon, 1978 .

Preliminary characterization of PbI2 polycrystalline layers deposited from solution for nuclear detector applications

J. Ponpon, 2001 .

Increasing the electrical anisotropy of solution-grown PbI2 thin films by addition of CdI2

J. Ponpon, M. Amann, 2010 .

Compensation effect of Sn in PbI2 polycrystalline layers

J. Ponpon, A. Mousa, M. Amann, 2008 .

Properties of solution grown PbI2 layers embedded in PVA

J. Ponpon, M. Amann, 2007 .

Thermally stimulated current measurements on polycrystalline PbI2 layers

J. Ponpon, M. Amann, 2002 .

Current instability and polarization phenomena in lead iodide crystalline detectors

J. Ponpon, M. Amann, 2004 .

Thermally stimulated current measurements on evaporated PbI2 layers

J. Ponpon, M. Amann, 2003 .

Selective trap filling induced by electron pulse excitation during TSC measurement in PbI2

R. Stuck, J. Ponpon, M. Amann, 2000 .

Material characterization during the fabrication of silicon nuclear detectors

P. Siffert, J. Schunck, J. Fontaine, 1991, RADECS 91 First European Conference on Radiation and its Effects on Devices and Systems.

Further results on the aging of silicon Schottky diodes: Influence of the metal

P. Siffert, J. Ponpon, 1979 .

Interface studies of metal-semiconductor contacts by means of SIMS, nuclear reaction and RBS

P. Siffert, A. Grob, J. Grob, 1978 .

Optical and Optoelectric Properties of PbCdS Ternary Thin Films Deposited by CBD

Ali M. Mousa, Modaffer. A. Mohammed, J. P. Ponpon, 2009 .

Thermally stimulated current measurements induced by pulsed electron beam excitation

R. Stuck, J. Ponpon, 1999 .

Boron Implanted Contacts on High Purity Germanium

P. Siffert, J. Grob, R. Stuck, 1971 .

Electrical, structural, and bonding changes induced in silicon by H, Ar, and Kr ion-beam etching

S. Ashok, S. Fonash, P. Caplan, 1983 .

Ion implanted high-purity germanium detectors

P. Siffert, R. Stuck, J. Ponpon, 1972 .

On the properties of real cadmium telluride surfaces

J. Ponpon, 1982 .

Contacts on chemically etched CdTe γ-ray detectors

J. Ponpon, A. Musa, 1983 .

Properties of electroless gold contacts on p-type cadmium telluride

P. Siffert, J. Grob, R. Stuck, 1983 .

Thin dE/dx detectors of uniform thickness made on epitaxial silicon

F. Vazeille, P. Siffert, J. Ponpon, 1973 .

Formation of thin silicon oxide films by rapid thermal heating

A. Grob, J. Grob, R. Stuck, 1986 .

Characterization of thin silicon oxide obtained by lamp heating

Paul Siffert, Abdelilah Slaoui, J. P. Ponpon, 1987 .

Growth of PbTe films by laser induced evaporation of pressed PbTe pellets

J. Ponpon, A. Mousa, 2006 .

Modeling of phosphorus diffusion in Ge accounting for a cubic dependence of the diffusivity with the electron concentration

Daniel Mathiot, Y. Leroy, J. Ponpon, 2010 .

Etching of mercuric iodide in cation iodide solutions

J. P. Ponpon, J. Ponpon, M. Amann, 2006 .

Influence of humidity on the electrical properties of potassium triiodomercurate

J. Ponpon, M. Sieskind, M. Amann, 2002 .

Behaviour of γ-ray detectors from high purity germanium at low temperature

P. Siffert, R. Stuck, J. Ponpon, 1972 .

Behavior of High‐Purity Germanium Nuclear Counters at Low Temperature

P. Siffert, R. Stuck, J. Ponpon, 1971 .

Further Studies on Implanted High Purity Germanium Detectors

P. Siffert, R. Stuck, J. Ponpon, 1972 .

Optical and electrical properties of PbTe films grown by laser induced evaporation of pressed PbTe pellets

J. Ponpon, A. Mousa, 2007 .

A simple procedure based on the PCD method for determination of recombination lifetime and surface recombination velocity in silicon

J. Fontaine, P. Siffert, J. Schunck, 1994 .

Measurement of the drift velocity of charge carriers in mercuric iodide

C. Canali, G. Majni, R. Minder, 1974 .