G. Wolstenholme

Polysilicon emitters for bipolar transistors: a review and re-evaluation of theory and experiment

I. Post, P. Ashburn, G. Wolstenholme, 1992 .

The production and destruction of the C-related 969 meV absorption band in Si

G. Wolstenholme, M. Carmo, E. C. Lightowlers, 1984 .

An investigation of the thermal stability of the interfacial oxide in polycrystalline silicon emitter bipolar transistors by comparing device results with high-resolution electron microscopy observations

Peter Ashburn, G. R. Booker, P. Ashburn, 1987 .

Measurement and modelling of the emitter resistance of polysilicon emitter transistors

P. Ashburn, G. Wolstenholme, G. Booker, 1988, Proceedings of the 1988 Bipolar Circuits and Technology Meeting,.

Effects of rapid thermal processing on the current gain and emitter resistance of polysilicon emitter bipolar transistors

L. Castañer, P. Ashburn, G. Wolstenholme, 1991, IEEE Electron Device Letters.

The asymptotes of the base current in bipolar devices

L. Castañer, P. Ashburn, G. Wolstenholme, 1988 .