J. Guillaume

Below Band-Gap IR Response of Substrate-Free GaAs Solar Cells Using Two-Photon Up-Conversion

P. Gibart, F. Auzel, J. Guillaume, 1996 .

Thermodynamic analysis of the short-range clustering in III V solid solutions

J. Guillaume, A. Marbeuf, 1984 .

Diffusion of Zn across p-n junctions in Ga0.47In0.53As

B. Beaumont, J. Guillaume, S. J. Taylor, 1993 .

Composition profiles and growth kinetics of GaxIn1−xP LPE layers: Experiments and theoretical approach

A. Etcheberry, H. Mariette, J. Guillaume, 1981 .

Preparation, analysis and properties of high purity Zn(l−x)MgxTe alloys

G. Revel, J. Rouchaud, M. Fédoroff, 1980 .

A InP Lattice-Matched Ga0.47.In0.53As Cell for Multispectral Photovoltaics

P. Garabedian, B. Beaumont, J. Guillaume, 1987 .

Low temperature photoluminescence of n‐type GaInAsP layers grown on InP by liquid phase epitaxy

B. Beaumont, J. Guillaume, C. Vérié, 1983 .

Secondary ion mass spectroscopy study of the diffusion of Zn in Ga0.47In0.53As

B. Beaumont, J. Guillaume, S. J. Taylor, 1993 .

Anisotropic Growth of GaAs in MOVPE

A. Rudra, Y. Monteil, A. Tromson-Carli, 1989 .

Epitaxial lift-off in photovoltaics:ultra thin Al/sub 0.2/Ga/sub 0.8/As cell in a mechanically stacked (Al,Ga)As/Si tandem

Pierre Gibart, Bernard Beaumont, Mathieu Leroux, 1994, Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC).

Thermodynamic analysis of the molecular beam epitaxy of AlInAs alloys

J. Massies, F. Turco, J. Guillaume, 1988 .

Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy

S. Haffouz, Pierre Gibart, Bernard Beaumont, 1998 .

Composition profile in semiconducting alloys by second derivative wavelength modulation

A. Laugier, J. Chevallier, J. Guillaume, 1980 .