I. Yassievich

发表

Deep impurity-center ionization by far-infrared radiation

S. Ganichev, W. Prettl, I. Yassievich, 1997 .

Nonradiative Recombination in Semiconductors

I. Yassievich, V. N. Abakumov, V. I. Perel’, 1991 .

Space-separated quantum cutting with silicon nanocrystals for photovoltaic applications

T. Gregorkiewicz, I. Izeddin, I. Yassievich, 2008 .

Optical transitions and energy relaxation of hot carriers in Si nanocrystals

A. Poddubny, I. Yassievich, A. Prokofiev, 2010, 1010.0166.

Chapter 15 Charge Effects in Catalysis by Nanostructured Metals

V. Smirnov, V. Kozhevin, S. Gurevich, 2007 .

Efficient Auger-excitation of erbium electroluminescence in reversely-biased silicon structures

P. E. Pak, I. Yassievich, M. S. Bresler, 1999 .

Magnetic properties of self-assembled nanostructure films on the base of amorphous Ni granules

E. Brück, V. Kozhevin, T. T. Nguyen, 2009 .

Carrier relaxation in Si/SiO2Si/SiO2 quantum dots

A. Poddubny, S. Goupalov, I. Yassievich, 2008, 0805.3451.

Energy transfer between silicon nanocrystals

E. I. Terukov, I. Yassievich, A. Prokofiev, 2011 .

Reply to 'Absence of redshift in the direct bandgap of silicon nanocrystals with reduced size'.

T. Gregorkiewicz, I. Yassievich, A. Capretti, 2017, Nature nanotechnology.

Peculiarities of photoluminescence of erbium in silicon structures prepared by the sublimation molecular-beam epitaxy method

V. P. Kuznetsov, I. Yassievich, M. S. Bresler, 2001 .

Electroluminescence at 7 terahertz from phosphorus donors in silicon

T. Adam, J. Kolodzey, Sangcheol Kim, 2004 .

Terahertz emission from electrically pumped gallium doped silicon devices

K. Goossen, S. Ray, J. Kolodzey, 2004 .

Ferromagnetic glass on the base of aggregates of Ni amorphous nanogranules

E. Brück, T. T. Nguyen, I. Yassievich, 2011 .

The effects of uniaxial compressive stress on the terahertz emission from phosphorus-doped silicon devices

J. Kolodzey, P. Lv, M. Odnoblyudov, 2005 .

The mechanisms of electronic excitation of rare earth impurities in semiconductors

L. Kimerling, I. Yassievich, 1993 .

Band structure of silicene in the tight binding approximation

M. Nestoklon, I. Yassievich, A. Gert, 2015 .

Effective Hamiltonian of silicene in the presence of electric and magnetic fields

M. Nestoklon, I. Yassievich, A. Gert, 2016 .

Tunneling from Deep Levels of l–c Type in Electric Fields

I. Yassievich, H. Köster, O. V. Kurnosova, 1985 .

Capture and emission of carriers in semiconductor quantum wells

I. Yassievich, K. Schmalz, M. Beer, 1994 .

Optical orientation and alignment of excitons in ensembles of inorganic perovskite nanocrystals

V. L. Korenev, Yu. G. Kusrayev, T. Gregorkiewicz, 2018, Physical Review B.

SPACE-CHARGE SPECTROSCOPY OF SELF-ASSEMBLED GE-RICH DOTS ON SI GROWN BY MBE

G. Abstreiter, I. Yassievich, K. Schmalz, 1999 .

Room‐temperature photoluminescence of erbium‐doped hydrogenated amorphous silicon

B. P. Zakharchenya, P. E. Pak, E. I. Terukov, 1995 .

EXCITATION AND TEMPERATURE QUENCHING OF ER-INDUCED LUMINESCENCE IN A-SI :H(ER)

E. I. Terukov, W. Fuhs, G. Weiser, 1997 .

Nanosecond dynamics of the near-infrared photoluminescence of Er-doped SiO2 sensitized with Si nanocrystals.

T. Gregorkiewicz, I. Izeddin, M. Fujii, 2006, Physical review letters.

Photon cutting for excitation Er3+ions in SiO2 sensitized by Si qunatum dots

T. Gregorkiewicz, R. Rizk, M. Trinh, 2011 .

Impact ionization in AIIIBV semiconductors in high electric fields

M. Mikhailova, A. Dmitriev, I. Yassievich, 1987 .

ROOM-TEMPERATURE ELECTROLUMINESCENCE OF ERBIUM-DOPED AMORPHOUS HYDROGENATED SILICON

B. P. Zakharchenya, E. I. Terukov, W. Fuhs, 1997 .

Cascade theory of electron capture in quantum wells

I. Yassievich, V. I. Perel’, P. Alekseev, 2008 .

Donor states in modulation-doped Si/SiGe heterostructures

K. Chao, M. Odnoblyudov, I. Yassievich, 2003, cond-mat/0302294.

Tunneling ionization of deep centers in high-frequency electric fields

H Germany, Russia., A. P. Institute, 2002, cond-mat/0301410.

Intraband radiative and nonradiative transitions of carriers confined in Si nanocrystals

A. Poddubny, S. Goupalov, I. Yassievich, 2008, 2008 5th IEEE International Conference on Group IV Photonics.

Effect of potential and doping profiles on excitation of stimulated THz emission of SiGe/Si quantum-well structures

E. G. Chirkova, S. Ray, J. Kolodzey, 2003 .

Resonant acceptor states in uniaxially strained semiconductors

M. Odnoblyudov, I. Yassievich, A. Prokofiev, 2002 .

Configuration interaction applied to resonant states in semiconductors and semiconductor nanostructures

K. Chao, M. Odnoblyudov, I. Yassievich, 2001 .

Characterization of deep impurities in semiconductors by terahertz tunneling ionization

S. Ganichev, W. Prettl, I. Yassievich, 2000 .

Tunnel ionization of deep impurities by far-infrared radiation

S. Ganichev, W. Prettl, I. Yassievich, 1996 .

Single-particle states in spherical Si/SiO2 quantum dots

J. Berakdar, I. Yassievich, A. Prokofiev, 2006, cond-mat/0609193.

Effective excitation cross section of erbium in amorphous hydrogenated silicon under optical pumping

P. E. Pak, I. Yassievich, O. Gusev, 2001 .

Non-resonant excitation of rare-earth ions via virtual Auger process

I. Yassievich, 2011 .

Hot hole redistribution in impurity states of boron-doped silicon terahertz emitters

T. Adam, J. Kolodzey, P. Lv, 2005 .

Effective Auger Excitation of Erbium Luminescence by Hot Electrons in Silicon

P. E. Pak, T. Gregorkiewicz, I. Yassievich, 1999 .

Mechanisms of excitation and thermal quenching of erbium-ion luminescence in crystalline and amorphous silicon

B. P. Zakharchenya, N. Sobolev, I. Yassievich, 1999 .

New efficient mechanism of excitation of electroluminescence from erbium ions in crystalline silicon

P. E. Pak, N. Sobolev, I. Yassievich, 1998 .

I. Yassievich, O. Gusev, M. Bresler, 1997 .

Er in molecular beam epitaxy grown GaAs/AlGaAs structures

B. P. Zakharchenya, H. Gibbs, G. Khitrova, 1997 .

TRANSIENT CHARACTERISTICS OF SiGe/Si QW STRUCTURES AT THz LASING

J. Kolodzey, I. Yassievich, I. Altukhov, 2007 .

Resonant States In Modulation Doped Sige Heterostructures As A Source Of Thz Lasing

M. Odnoblyudov, I. Yassievich, A. Prokofiev, 2003 .

Resonant states and THz lasing in SiGe quantum well structures δ-doped with boron

I. Yassievich, M. Kagan, 2002 .

Towards Si1−xGex quantum-well resonant-state terahertz laser

E. G. Chirkova, Kang L. Wang, S. Thomas, 2001 .

Terahertz emission of SiGe/Si quantum wells

Kang L. Wang, S. Thomas, K. Chao, 2000 .

Mechanism of population inversion in uniaxially strainedp-Ge continuous-wave lasers

K. Chao, M. Odnoblyudov, I. Yassievich, 2000 .

Resonant states induced by shallow acceptors in uniaxially strained semiconductors

V. Chistyakov, K. Chao, M. Odnoblyudov, 2000 .

LOCALIZED-STATE BAND INDUCED BY B DELTA -DOPING IN SI/SI1-XGEX/SI QUANTUM WELLS

Kang L. Wang, S. Thomas, I. Yassievich, 1998 .

Two-dimensional A+ states in boron doped SiGe quantum structures

M. Odnoblyudov, I. Yassievich, K. Schmalz, 1996 .

Photo- and Electroluminescence Study of Excitation Mechanism of Er Luminescence in a-Si:ff(Er)

B. P. Zakharchenya, W. Fuhs, I. Yassievich, 1996 .

Energy transfer processes in Er-doped SiO2 sensitized with Si nanocrystals

T. Gregorkiewicz, M. Fujii, A. A. Prokofiev, 2008, 0806.0960.

Influence of p-n junction formation at a Si/Si:Er interface on low temperature excitation of Er3+ ions in crystalline silicon

T. Gregorkiewicz, B. Pawlak, N. Vinh, 2001 .

Excitation Cross-Section of Erbium in Semiconductor Matrices under Optical Pumping

P. E. Pak, T. Gregorkiewicz, N. Q. Vinh, 2001 .

Stimulated emission in erbium-doped silicon structures under optical pumping

B. P. Zakharchenya, V. Timoshenko, P. Kashkarov, 2001 .

Lifetime of excitons localized in Si nanocrystals in amorphous silicon

I. Yassievich, O. Gusev, A. Kukin, 2016 .

Recombination-Induced Defect Heating and Related Phenomena

A. A. Pakhomov, I. Yassievich, V. N. Abakumov, 1992 .

Terahertz electroluminescence under conditions of shallow acceptor breakdown in germanium

N. N. Zinov'ev, A. Andrianov, I. Yassievich, 2004 .

Electron and hole states in ultrathin quantum wells

U. Rößler, I. Yassievich, 1994 .

New size effect in the catalysis by interacting copper nanoparticles

M. A. Zabelin, V. Kozhevin, I. Yassievich, 2005 .

Distinction between the Poole-Frenkel and tunneling models of electric-field-stimulated carrier emission from deep levels in semiconductors

Eicke R. Weber, Sergey Ganichev, Irina Yassievich, 2000 .

Radiative and nonradiative recombination of self-trapped exciton on silicon nanocrystal interface

I. Yassievich, A. Gert, 2013 .

Multiphonon relaxation of moderately excited carriers in Si/SiO2nanocrystals

A. Poddubny, S. Goupalov, J. Berakdar, 2012 .

Tunnelling ionization of deep centres in high-frequency electric fields

S. Ganichev, W. Prettl, I. Yassievich, 2002 .

Spin-dependent resonant tunneling in symmetrical double-barrier structures

V. M. Chistyakov, P. S. Alekseev, M. A. Odnoblyudov, 2004, cond-mat/0410198.

Carrier tunneling in high-frequency electric fields

Sergey Ganichev, Eugene E. Haller, Ingrid Wilke, 1998 .

Spin-dependent tunneling through a symmetric semiconductor barrier

S. Ganichev, W. Prettl, I. Yassievich, 2003, cond-mat/0301098.

Polaron Effects in Quantum Dots

K. Chao, M. Odnoblyudov, I. Yassievich, 1999 .

Acceptor States in Boron Doped SiGe Quantum Wells

K. Korolev, K. Wang, I. Yassievich, 1997 .

Far-Infrared Stimulated Emission in p-Ge under High Uniaxial Pressure

E. G. Chirkova, K. Korolev, I. Yassievich, 1996 .

Domain formation in films of magnetic nanoparticles with a random distribution of anisotropy axes

D. S. Il’yushchenkov, I. Yassievich, V. Kozub, 2007 .

Red spectral shift and enhanced quantum efficiency in phonon-free photoluminescence from silicon nanocrystals.

T. Gregorkiewicz, W. Buma, Hong Zhang, 2010, Nature nanotechnology.

Tight-binding calculations of the optical properties of Si nanocrystals in a SiO2 matrix.

M. Nestoklon, I. Avdeev, J. Linnros, 2020, Faraday discussions.

Linearly polarized terahertz radiation in uniaxially deformed Ge(Ga) upon the electric breakdown of an impurity

N. N. Zinov'ev, A. Andrianov, I. Yassievich, 2006 .

Theory of a strained p-Ge resonant-state terahertz laser

K. Chao, M. Odnoblyudov, I. Yassievich, 2004 .

Phonon decay in silicon nanocrystals: Fast phonon recycling

A. Poddubny, I. Yassievich, A. Prokofiev, 2014 .

Effect of cooling of carriers in semiconductors by light

I. Yassievich, I. Yaroshetskii, P. Valov, 1974 .

Role of surface self-trapped excitons in the energy relaxation of photoexcited silicon nanocrystals

I. Yassievich, A. Gert, 2015 .

TOPICAL REVIEW: Tunnelling ionization of deep centres in high-frequency electric fields

S. Ganichev, W. Prettl, I. Yassievich, 2002 .

Direct bandgap optical transitions in Si nanocrystals

T. Gregorkiewicz, W. Buma, H. Zhang, 2009, 0901.4268.

Ge/Si Core/Shell Quantum Dots in an Alumina Matrix: Influence of the Annealing Temperature on the Optical Properties

A. N. Yablonsky, A. Lihachev, N. Bert, 2020 .

Impact ionization in semiconductors under the influence of the electric field of an optical wave

Ya. V. Terent’ev, S. Ganichev, A. Dmitriev, 1986 .

Linear Polarized Terahertz Emission under Electrical Breakdown of a Shallow Acceptor in Uniaxially Deformed Germanium

N. N. Zinov'ev, A. Andrianov, I. Yassievich, 2008 .

Widely tunable continuous-wave THz laser

M. S. Kagan, V. P. Sinis, Koung-An Chao, 1999 .

Impact ionization in a semiconductor in a light wave

Ya. V. Terent’ev, S. Ganichev, A. Dmitriev, 1984 .

Population Inversion Induced by Resonant States in Semiconductors

M. S. Kagan, Koung-An Chao, M. A. Odnoblyudov, 1999 .

Thermally stimulated exciton emission in Si nanocrystals

J. Valenta, T. Gregorkiewicz, A. Poddubny, 2017, Light: Science & Applications.

Auger Recombination of Electrons via Deep and Shallow Acceptors

M. Strikha, I. Yassievich, V. Khalfin, 1985, November 1.

Excitons in Si nanocrystals

I. Yassievich, A. S. Moskalenko, 2004 .

Efficient Electroluminescence In Alloyed Silicon Diodes

B. P. Zakharchenya, I. Yassievich, O. Gusev, 2003 .

Absorption of Si, Ge, and SiGe alloy nanocrystals embedded in SiO2 matrix

M. Nestoklon, I. Avdeev, I. Yassievich, 2020 .

Erratum: “Optical transitions and energy relaxation of hot carriers in Si nanocrystals” [Appl. Phys. Lett. 97, 231116 (2010)]

A. Poddubny, I. Yassievich, A. Prokofiev, 2013 .

Self-trapped exciton state in Si nanocrystals revealed by induced absorption

T. Gregorkiewicz, A. Poddubny, Hong Zhang, 2012 .

Electron-phonon interaction in non-polar quantum dots induced by the amorphous polar environment

A. Poddubny, S. Goupalov, I. Yassievich, 2008, 0808.1086.

Confined electrons and holes in Si nanocrystals: Theoretical modeling of the energy spectrum and radiative transitions

I. Yassievich, A. Prokofiev, A. S. Moskalenko, 2007 .

Long living shallow donor excited states and FIR-IR up-conversion in GaP:Te

S. Ganichev, W. Prettl, I. Yassievich, 1996 .

Catalytic Properties of High-Density Monodispersive Metal Nanostructures

M. A. Zabelin, V. Smirnov, V. Kozhevin, 2003 .

Theory of interface roughness scattering in quantum wells

H. Rücker, U. Penner, I. Yassievich, 1998 .

Carrier injection as a cause of THz lasing excitation in SiGe/Si QW structures

J. Kolodzey, I. Yassievich, I. Altukhov, 2007 .

The design and operation of TeraHertz sources based on silicon germanium alloys

A. Rosen, A. Rosen, S. Ray, 2003, 2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers..

Resonant States in Strained Semiconductors

V. Chistyakov, M. Odnoblyudov, I. Yassievich, 1998 .

Lateral Transport in Strained SiGe Quantum Wells Doped with Boron

K. Korolev, S. Thomas, K. Wang, 1999 .

High Energy Distribution Function in an Electric Field and Electron Impact Ionization in AIIIBV Semiconductors

M. Mikhailova, A. Dmitriev, I. Yassievich, 1982 .

Effect of spin–orbit interaction on tunnel ionization of deep centers in electric field

I. Yassievich, V. I. Perel’, 2003 .

Terahertz tunnel ionization of DX centers in AlGaAs:Te

S. Ganichev, W. Prettl, I. Yassievich, 1999 .

Magnetic field effect on tunnel ionization of deep impurities by far-infrared radiation

S. Ganichev, I. Yassievich, V. I. Perel’, 1999 .

Tunneling Ionization of Autolocalized DX- Centers in Terahertz Fields.

Meyer, K. Benz, B. Meyer, 1995, Physical review letters.

Poole-Frenkel Effect in Terahertz Electromagnetic Fields

S. Ganichev, W. Prettl, J. Diener, 1995 .

Reply to 'Absence of redshift in the direct bandgap of silicon nanocrystals with reduced size'.

T. Gregorkiewicz, I. Yassievich, A. Capretti, 2017, Nature nanotechnology.

Theoretical modeling of excitation and de-excitation processes of Er in SiO2 with Si nanocrystals

I. Yassievich, A. Prokofiev, A. S. Moskalenko, 2006 .

Hot carrier effect on resonant state THz laser operation

M. Odnoblyudov, I. Yassievich, I. Altukhov, 2004 .

Spontaneous Terahertz Emission under Electrical Breakdown of a Shallow Acceptor in Ge

N. N. Zinov'ev, A. Andrianov, I. Yassievich, 2005 .

Storage of electrons in shallow donor excited states of GaP:Te

S. Ganichev, W. Prettl, I. Yassievich, 1997 .