J. Tzou

发表

Deactivation of the boron acceptor in silicon by hydrogen

J. Sun, C. Sah, J. Tzou, 1983 .

Hot-carrier-induced latchup and trapping/detrapping phenomena

Cary Y. Yang, J. Tzou, C. Wang, 1989 .

Study of the atomic models of three donor‐like traps on oxidized silicon with aluminum gate from their processing dependences

J. Sun, C. Sah, J. Tzou, 1983 .

Generation‐annealing kinetics and atomic models of a compensating donor in the surface space charge layer of oxidized silicon

J. Sun, C. Sah, J. Tzou, 1983 .

Generation annealing kinetics of interface states on oxidized silicon activated by 10.2-eV photohole injection

J. Sun, C. Sah, J. Tzou, 1982 .

Effects of avalanche injection currents on the endurance of Si MOS devices

J. Sun, C. Sah, J. Tzou, 1982, 1982 International Electron Devices Meeting.

Effects of keV electron irradiation on optical generation of hole traps in thermal oxide on silicon

J. Sun, C. Sah, J. Tzou, 1984 .

Effects of keV electron irradiation on the avalanche‐electron generation rates of three donors on oxidized silicon

J. Sun, C. Sah, J. Tzou, 1983 .

Deactivation of group III acceptors in silicon during keV electron irradiation

Chih-Tang Sah, C. Sah, J. Tzou, 1983 .

Hot-electron-induced MOSFET degradation at low temperatures

H. Chan, C.C. Yao, J. Tzou, 1985, IEEE Electron Device Letters.

Study of the atomic models of three donorlike defects in silicon metal‐oxide‐semiconductor structures from their gate material and process dependencies

Chih-Tang Sah, C. Sah, J. Tzou, 1984 .

Generation‐annealing kinetics of the interface donor states at 0.25 eV above the midgap and the turn‐around phenomena on oxidized silicon during avalanche electron injection

Chih-Tang Sah, C. Sah, J. Tzou, 1983 .