Yu Zhu

Impact of HK / MG stacks and future device scaling on RTN

D. Frank, W. Haensch, M. Guillorn, 2011, 2011 International Reliability Physics Symposium.

Hysteretic drain-current behavior due to random telegraph noise in Scaled-down FETs with high-κ/metal-gate stacks

Yu Zhu, Michael A. Guillorn, Wilfried Haensch, 2010, 2010 International Electron Devices Meeting.

Sub-25nm FinFET with advanced fin formation and short channel effect engineering

K. Maitra, P. Kulkarni, T. Yamashita, 2011, 2011 Symposium on VLSI Technology - Digest of Technical Papers.

Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications

L. H. Vanamurth, D. Yang, T. Adam, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).