S. Okur

发表

High-Speed Nonpolar InGaN/GaN LEDs for Visible-Light Communication

D. Feezell, A. Rashidi, M. Monavarian, 2017 .

GaN-Based Vertical Cavities with All Dielectric Reflectors by Epitaxial Lateral Overgrowth

H. Morkoç, V. Avrutin, Ü. Özgür, 2013 .

Internal quantum efficiency and carrier dynamics in semipolar (2021) InGaN/GaN light-emitting diodes.

S. Denbaars, I. Brener, D. Feezell, 2017, Optics express.

Impact of active layer design on InGaN radiative recombination coefficient and LED performance

H. Morkoç, V. Avrutin, Ü. Özgür, 2012 .

Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells

B. Guizal, H. Morkoç, T. Bretagnon, 2014 .

Recombination dynamics of excitons with low non-radiative component in semi-polar (10-11)-oriented GaN/AlGaN multiple quantum wells

B. Guizal, H. Morkoç, T. Bretagnon, 2014 .

Growth and characterization of α-, β-, and ϵ-phases of Ga2O3 using MOCVD and HVPE techniques

R. Davis, Yao Yao, G. Tompa, 2018 .

HCl Flow-Induced Phase Change of α-, β-, and ε-Ga2O3 Films Grown by MOCVD

G. Tompa, A. Genovese, Xiaohang Li, 2018 .

Active region dimensionality and quantum efficiencies of InGaN LEDs from temperature dependent photoluminescence transients

Hadis Morkoç, Ümit Özgür, Fan Zhang, 2015, Photonics West - Optoelectronic Materials and Devices.

Laser Direct Write Synthesis of Lead Halide Perovskites.

C. B. Carter, D. Burckel, M. Janish, 2016, The journal of physical chemistry letters.

Spectral distribution of excitation-dependent recombination rate in an In0.13Ga0.87N epilayer

H. Morkoç, K. Jarašiūnas, Ü. Özgür, 2013 .

Tailoring the morphology and luminescence of GaN/InGaN core–shell nanowires using bottom-up selective-area epitaxy

Rhett F. Eller, I. Brener, D. Feezell, 2017, Nanotechnology.

Structural and optical quality of GaN grown on Sc2O3/Y2O3/Si(111)

H. Morkoç, P. Zaumseil, T. Schroeder, 2012 .

Structural and magnetic characterization of plasma ion nitrided layer on 316L stainless steel alloy

J. Rivière, S. Okur, Orhan Öztürk, 2009 .

Magnetic layer formation on plasma nitrided CoCrMo alloy

M. Liedke, J. Rivière, S. Okur, 2011 .

Structural, compositional and mechanical characterization of plasma nitrided CoCrMo alloy

S. Okur, 2009 .

Nondestructive atomic compositional analysis of BeMgZnO quaternary alloys using ion beam analytical techniques

H. Morkoç, Z. Zolnai, D. Demchenko, 2015 .

High-Speed Nonpolar InGaN/GaN LEDs for Visible-Light Communication

Morteza Monavarian, Serdal Okur, Mohsen Nami, 2017, IEEE Photonics Technology Letters.

Spectrally-resolved internal quantum efficiency and carrier dynamics of semipolar ( 10 1 ¯ 1 ) core-shell triangular nanostripe GaN/InGaN LEDs

S. Brueck, I. Brener, D. Feezell, 2018, Nanotechnology.

On the quantum efficiency of InGaN light emitting diodes: Effects of active layer design, electron cooler, and electron blocking layer

H. Morkoç, F. Zhang, V. Avrutin, 2011 .

Carrier dynamics in bulk GaN

Hadis Morkoç, Ümit Özgür, Serdal Okur, 2012 .

High-power VCSEL arrays with customized beam divergence for 3D-sensing applications

Baiming Guo, Guoyang Xu, Chuni Ghosh, 2019, OPTO.

Indium-incorporation efficiency in semipolar (11-22) oriented InGaN-based light emitting diodes

Sebastian Metzner, Hadis Morkoç, Ümit Özgür, 2015, Photonics West - Optoelectronic Materials and Devices.

Temperature-dependent time-resolved photoluminescence measurements of (1-101)-oriented semi-polar AlGaN/GaN MQWs

Hadis Morkoç, Ümit Özgür, Natalia Izyumskaya, 2015, Photonics West - Optoelectronic Materials and Devices.

Polarized time-resolved photoluminescence measurements of m-plane AlGaN/GaN MQWs

V. Avrutin, Ü. Özgür, Daniel Rosales, 2014, Photonics West - Optoelectronic Materials and Devices.

Characterization of Epitaxial β-(Al,Ga,In)2O3-Based Films and Applications as UV Photodetectors

V. S. Chava, R. Davis, G. Tompa, 2020, Journal of Electronic Materials.

β-Ga2O3 Thin Film Based Lateral and Vertical Schottky Barrier Diode

D. Gajula, G. Tompa, G. Koley, 2019, ECS Journal of Solid State Science and Technology.

Strong carrier localization in stacking faults in semipolar (11-22) GaN

Hadis Morkoç, Ümit Özgür, Natalia Izyumskaya, 2015, Photonics West - Optoelectronic Materials and Devices.

Optical studies of strain and defect distribution in semipolar (11¯01) GaN on patterned Si substrates

Sebastian Metzner, Hadis Morkoç, Ümit Özgür, 2013 .

Enhancement of Be and Mg incorporation in wurtzite quaternary BeMgZnO alloys with up to 5.1 eV optical bandgap

H. Morkoç, D. Demchenko, V. Avrutin, 2014 .

Recombination and diffusion processes in polar and nonpolar bulk GaN investigated by time-resolved photoluminescence and nonlinear optical techniques

Hadis Morkoç, Ümit Özgür, Serdal Okur, 2012, OPTO.

Ballistic transport in InGaN-based LEDs: impact on efficiency

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2011 .

Carrier dynamics under two‐ and single‐photon excitation in bulk GaN

Hadis Morkoç, Ümit Özgür, Serdal Okur, 2012 .

Internal quantum efficiency and carrier dynamics in semipolar (2021) InGaN/GaN light-emitting diodes.

S. Denbaars, I. Brener, D. Feezell, 2017, Optics express.

Optical properties of m-plane GaN grown on patterned Si(112) substrates by MOCVD using a two-step approach

Sebastian Metzner, Hadis Morkoç, Ümit Özgür, 2014, Photonics West - Optoelectronic Materials and Devices.

Optical properties of nonpolar (1-100) and semipolar (1-101)GaN grown by MOCVD on Si patterned substrates

Sebastian Metzner, Hadis Morkoç, Lin Zhou, 2011, OPTO.

Microscopic distribution of extended defects and blockage of threading dislocations by stacking faults in semipolar (11¯01) GaN revealed from spatially resolved luminescence

Sebastian Metzner, Hadis Morkoç, Ümit Özgür, 2013 .