A. Rishinaramangalam

发表

High-Speed Nonpolar InGaN/GaN LEDs for Visible-Light Communication

D. Feezell, A. Rashidi, M. Monavarian, 2017 .

Carrier Dynamics and Electro-Optical Characterization of High-Performance GaN/InGaN Core-Shell Nanowire Light-Emitting Diodes

S. Brueck, I. Brener, D. Feezell, 2018, Scientific Reports.

GaN nanowire light emitting diodes based on templated and scalable nanowire growth

Michael N. Fairchild, S. Hersee, A. Talin, 2009 .

Threading defect elimination in GaN nanowires

Michael N. Fairchild, S. Hersee, P. Varangis, 2011 .

Selective-area growth of III-nitride core-shell nanowalls for light-emitting and laser diodes

Michael N. Fairchild, D. Feezell, D. Shima, 2014, 2014 Conference on Lasers and Electro-Optics (CLEO) - Laser Science to Photonic Applications.

Nonpolar ${m}$ -Plane InGaN/GaN Micro-Scale Light-Emitting Diode With 1.5 GHz Modulation Bandwidth

D. Feezell, A. Rashidi, M. Monavarian, 2018, IEEE Electron Device Letters.

Internal quantum efficiency and carrier dynamics in semipolar (2021) InGaN/GaN light-emitting diodes.

S. Denbaars, I. Brener, D. Feezell, 2017, Optics express.

GHz-Bandwidth Nonpolar InGaN/GaN Micro-LED Operating at Low Current Density for Visible-Light Communication

D. Feezell, A. Rashidi, M. Monavarian, 2018, 2018 IEEE International Semiconductor Laser Conference (ISLC).

Three-dimensional GaN templates for molecular beam epitaxy of nonpolar InGaN/GaN coaxial light-emitting diodes

Michael N. Fairchild, S. Hersee, D. Feezell, 2013 .

Laser-assisted atom probe tomography of c-plane and m-plane InGaN test structures

National Institute of Standards, Boulder, Ga, 2021, 2102.06340.

Tailoring the morphology and luminescence of GaN/InGaN core–shell nanowires using bottom-up selective-area epitaxy

Rhett F. Eller, I. Brener, D. Feezell, 2017, Nanotechnology.

Nanoporous distributed Bragg reflectors on free-standing nonpolar m-plane GaN

D. Feezell, M. Monavarian, M. Nami, 2018 .

GaN/InGaN Blue Light‐Emitting Diodes on Polycrystalline Molybdenum Metal Foils by Ion Beam‐Assisted Deposition

D. Feezell, C. Sheehan, A. Rashidi, 2020, physica status solidi (a).

High-Speed Nonpolar InGaN/GaN Superluminescent Diode With 2.5 GHz Modulation Bandwidth

S. Denbaars, D. Feezell, A. Rashidi, 2020, IEEE Photonics Technology Letters.

High-Speed Nonpolar InGaN/GaN LEDs for Visible-Light Communication

Morteza Monavarian, Serdal Okur, Mohsen Nami, 2017, IEEE Photonics Technology Letters.

Extreme Ultraviolet Radiation Pulsed Atom Probe Tomography of III-Nitride Semiconductor Materials

B. Gorman, A. Davydov, K. Bertness, 2021 .

Spectrally-resolved internal quantum efficiency and carrier dynamics of semipolar ( 10 1 ¯ 1 ) core-shell triangular nanostripe GaN/InGaN LEDs

S. Brueck, I. Brener, D. Feezell, 2018, Nanotechnology.

Controlled Growth of Ordered III-Nitride Core–Shell Nanostructure Arrays for Visible Optoelectronic Devices

Jeremy B. Wright, Michael N. Fairchild, S. Brueck, 2015, Journal of Electronic Materials.

Growth, processing and chracterization of gallium nitride based coaxial LEDs grown by MOVPE

A. Rishinaramangalam, 2012 .

Carrier Dynamics and Electro-Optical Characterization of High-Performance GaN/InGaN Core-Shell Nanowire Light-Emitting Diodes

S. Brueck, I. Brener, D. Feezell, 2018, Scientific Reports.

Impact of crystal orientation on the modulation bandwidth of InGaN/GaN light-emitting diodes

Morteza Monavarian, Sang Ho Oh, Steven P. DenBaars, 2018 .

Electrically Injected GHz-Class GaN/InGaN Core–Shell Nanowire-Based μLEDs: Carrier Dynamics and Nanoscale Homogeneity

Morteza Monavarian, Steven R. J. Brueck, Mohsen Nami, 2019, ACS Photonics.

Differential carrier lifetime and transport effects in electrically injected III-nitride light-emitting diodes

Morteza Monavarian, Andrew A. Aragon, Mohsen Nami, 2017 .

Delta-doped β-Ga2O3 thin films and β-(Al0.26Ga0.74)2O3/β-Ga2O3 heterostructures grown by metalorganic vapor-phase epitaxy

D. Feezell, M. Scarpulla, S. Krishnamoorthy, 2019, Applied Physics Express.

Si-doped β-(Al0.26Ga0.74)2O3 thin films and heterostructures grown by metalorganic vapor-phase epitaxy

D. Feezell, S. Krishnamoorthy, A. Rishinaramangalam, 2019, Applied Physics Express.

Ordered arrays of bottom-up III-nitride core-shell nanostructures

Ganesh Balakrishnan, Darryl M. Shima, S. R. J. Brueck, 2015, SPIE NanoScience + Engineering.

Advanced Scanning Probe Nanolithography Using GaN Nanowires.

I. Rangelow, J. Randall, D. Feezell, 2021, Nano letters.

Reduction of reverse‐leakage current in selective‐area‐grown GaN‐based core–shell nanostructure LEDs using AlGaN layers

D. Feezell, D. Shima, G. Balakrishnan, 2017 .

Field emission scanning probe lithography with GaN nanowires on active cantilevers

M. Hofmann, I. Rangelow, D. Feezell, 2020, Journal of Vacuum Science & Technology B.

Sharp GaN nanowires used as field emitter on active cantilevers for scanning probe lithography

M. Hofmann, C. Lenk, I. Rangelow, 2018, Journal of Vacuum Science & Technology B.

Experimental study of field emission from ultrasharp silicon, diamond, GaN, and tungsten tips in close proximity to the counter electrode

M. Hofmann, C. Lenk, I. Rangelow, 2018, Journal of Vacuum Science & Technology B.

Internal quantum efficiency and carrier dynamics in semipolar (2021) InGaN/GaN light-emitting diodes.

S. Denbaars, I. Brener, D. Feezell, 2017, Optics express.

Si-doped β-(Al0.26Ga0.74)2O3 thin films and heterostructures grown by metalorganic vapor-phase epitaxy

D. Feezell, S. Krishnamoorthy, A. Rishinaramangalam, 2019, Applied Physics Express.