Jingyu Lin

发表

Band-edge exciton states in AlN single crystals and epitaxial layers

C. Chen, M. Khan, Hongxing Jiang, 2004 .

III-nitride blue and ultraviolet photonic crystal light emitting diodes

K. H. Kim, Hongxing Jiang, Jingyu Lin, 2004 .

Deep ultraviolet to near-infrared emission and photoresponse in layered N-doped graphene quantum dots.

S. Lau, Hongxing Jiang, Xueming Li, 2014, ACS nano.

III-Nitride full-scale high-resolution microdisplays

Hongxing Jiang, D. Lie, Jingyu Lin, 2011 .

III-nitride photonic crystals

Tom Oder, Hongxing Jiang, J. Shakya, 2003 .

Enhanced light extraction in III-nitride ultraviolet photonic crystal light-emitting diodes

Hongxing Jiang, K. H. Kim, J. Shakya, 2004 .

Correlation between optical and electrical properties of Mg-doped AlN epilayers

Neeraj Nepal, Mim Lal Nakarmi, Hongxing Jiang, 2006 .

Response of alpha particles in hexagonal boron nitride neutron detectors

Hongxing Jiang, Jingyu Lin, Jing Li, 2017 .

Growth and device processing of hexagonal boron nitride epilayers for thermal neutron and deep ultraviolet detectors

Jing Li, Hongxing Jiang, Jingyu Lin, 2016 .

Hexagonal boron nitride for deep ultraviolet photonic devices

Hongxing Jiang, Jingyu Lin, J. Lin, 2014 .

Dry etching techniques for active devices based on hexagonal boron nitride epilayers

Jing Li, Hongxing Jiang, S. J. Grenadier, 2013 .

Carrier Dynamics in III--Nitrides Studied by Time-Resolved Photoluminescence

Hongxing Jiang, Jingyu Lin, 2004 .

Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material

Rajendra Dahal, Hongxing Jiang, S. Majety, 2011 .

AlN avalanche photodetectors

Rajendra Dahal, Hongxing Jiang, T. M. Al tahtamouni, 2007 .

Electrical transport properties of (BN)-rich hexagonal (BN)C semiconductor alloys

Hongxing Jiang, Jingyu Lin, J. Li, 2014 .

Recent ROB developments on wide bandgap based UV sensors

Shui-Tong Lee, Hongxing Jiang, Wenjun Zhang, 2009 .

Photoluminescence studies of impurity transitions in AlGaN alloys

Hongxing Jiang, N. Nepal, M. Nakarmi, 2006 .

Effects of Mg-doped AlN/AlGaN superlattices on properties of p-GaN contact layer and performance of deep ultraviolet light emitting diodes

Hongxing Jiang, Jingyu Lin, T. Tahtamouni, 2014 .

Al rich AlN/AlGaN Quantum Wells

Hongxing Jiang, N. Nepal, Jingyu Lin, 2006 .

Nature of optical transitions involving cation vacancies and complexes in AlN and AlGaN

Hongxing Jiang, Jingyu Lin, A. Sedhain, 2012 .

Optical enhancement of room temperature ferromagnetism in Er-doped GaN epilayers

Hongxing Jiang, J. Zavada, R. Dahal, 2009 .

Optical polarization in c-plane Al-rich AlN/AlxGa1-xN single quantum wells

Hongxing Jiang, Jingyu Lin, T. Tahtamouni, 2012 .

Band structure and fundamental optical transitions in wurtzite AlN

Suhuai Wei, Hongxing Jiang, P. Carrier, 2003 .

(Invited) InGaN/GaN Multiple Quantum Well Solar Cells for Energy and Hydrogen Generation

Hongxing Jiang, Jingyu Lin, 2015 .

Temperature dependence studies of Er optical centers in GaN epilayers grown by MOCVD

J. Lin, Hongxing Jiang, J. Zavada, 2017 .

Localized vibrational modes of carbon-hydrogen complexes in GaN

M. O. Manasreh, Hongxing Jiang, J. Baranowski, 1999 .

Deep bandtail states picosecond intensity-dependent carrier dynamics of GaN epilayer under high excitation

K. Wong, Hongxing Jiang, B. Guo, 2005 .

Optical properties of the nitrogen vacancy in AlN epilayers

Hongxing Jiang, J. Zavada, R. Wilson, 2004 .

Suppression of thermal conductivity in InxGa1−xN alloys by nanometer-scale disorder

I. Ferguson, W. Schaff, Hongxing Jiang, 2013 .

Evolution of phase separation in In-rich InGaN alloys

Hongxing Jiang, Jingyu Lin, Jing Li, 2010 .

Probing carbon impurities in hexagonal boron nitride epilayers

Hongxing Jiang, Jingyu Lin, Jing Li, 2017 .

Bandgap and exciton binding energies of hexagonal boron nitride probed by photocurrent excitation spectroscopy

Hongxing Jiang, Jingyu Lin, Jing Li, 2016 .

Characterization of bulk hexagonal boron nitride single crystals grown by the metal flux technique

Hongxing Jiang, M. Currie, Jingyu Lin, 2014 .

Layer-structured hexagonal (BN)C semiconductor alloys with tunable optical and electrical properties

Hongxing Jiang, Jingyu Lin, J. Li, 2014 .

Synthesis and photoluminescence properties of hexagonal BGaN alloys and quantum wells

Hongxing Jiang, Jingyu Lin, Jing Li, 2018, Applied Physics Express.

Origin and roles of oxygen impurities in hexagonal boron nitride epilayers

Hongxing Jiang, Jingyu Lin, Jing Li, 2018 .

Nature of exciton transitions in hexagonal boron nitride

Hongxing Jiang, Jingyu Lin, J. Edgar, 2016 .

Realization of highly efficient hexagonal boron nitride neutron detectors

Hongxing Jiang, Jingyu Lin, Jing Li, 2016 .

Carbon-rich hexagonal (BN)C alloys

Hongxing Jiang, Jingyu Lin, Jing Li, 2015 .

MOCVD growth of Er-doped III-N and optical-magnetic characterization

Hongxing Jiang, J. Zavada, V. Dierolf, 2016 .

A Simplified Method of Making Flexible Blue LEDs on a Plastic Substrate

Jing Li, Zhenqiang Ma, Jung-Hun Seo, 2015, IEEE Photonics Journal.

Optical properties of GaN pyramids

Hongxing Jiang, Wei Yang, Jingyu Lin, 1999 .

Achieving highly conductive AlGaN alloys with high Al contents

Hongxing Jiang, M. Nakarmi, Jingyu Lin, 2002 .

Measurement of the Al mole fraction of bulk AlGaN and AlGaN/GaN heterostructure by photoconductance method

Hongxing Jiang, D. Qiao, J. Redwing, 1999 .

High Mobility InN epilayers grown on AlN templates by MOCVD

Hongxing Jiang, Jingyu Lin, Jing Li, 2008 .

Probing exciton-phonon interaction in AlN epilayers by photoluminescence

Hongxing Jiang, Jingyu Lin, Jing Li, 2009 .

Excitonic recombination in GaN grown by molecular beam epitaxy

H. Morkoç, A. Salvador, M. Smith, 1995 .

Deep ultraviolet photoluminescence of water-soluble self-passivated graphene quantum dots.

Jianhua Hao, Hongxing Jiang, Shu Ping Lau, 2012, ACS nano.

GaN microdisk light emitting diodes

Hongxing Jiang, Jingyu Lin, Hongxing Jiang, 2000 .

High-Resolution Group III Nitride Microdisplays

Hongxing Jiang, D. Lie, Jingyu Lin, 2011 .

Advances in III-nitride micro-photonic devices

Jingyu Lin, Hongzing Jiang, 2001, LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242).

OPTICAL RESONANCE MODES IN GAN PYRAMID MICROCAVITIES

Hongxing Jiang, Wei Yang, Jingyu Lin, 1999 .

Correlation between the optical loss and crystalline quality in erbium-doped GaN optical waveguides.

Hongxing Jiang, J. Zavada, Jingyu Lin, 2013, Applied optics.

Transport properties of highly conductive n-type Al-rich AlxGa1−xN(x⩾0.7)

K. H. Kim, Hongxing Jiang, M. Nakarmi, 2004 .

Layer number dependent optical properties of multilayer hexagonal BN epilayers

Hongxing Jiang, Jingyu Lin, Jing Li, 2017 .

Probing the relationship between structural and optical properties of Si-doped AlN

Hongxing Jiang, Jingyu Lin, Jing Li, 2010 .

Enhancing erbium emission by strain engineering in GaN heteroepitaxial layers

Hongxing Jiang, J. Zavada, Jingyu Lin, 2010 .

Photoluminescence properties of AlN homoepilayers with different orientations

Hongxing Jiang, N. Nepal, M. Nakarmi, 2008 .

Large-Scale Growth of High-Quality Hexagonal Boron Nitride Crystals at Atmospheric Pressure from an Fe–Cr Flux

B. Liu, Hongxing Jiang, Jingyu Lin, 2017 .

Annealing of dry etch damage in metallized and bare (-201) Ga2O3

F. Ren, S. Pearton, Hongxing Jiang, 2017 .

Si-Doped High Al-Content AlGaN Epilayers with Improved Quality and Conductivity Using Indium as a Surfactant

Hongxing Jiang, Jingyu Lin, T. Tahtamouni, 2008 .

Recent developments of wide-bandgap semiconductor based UV sensors

Frank Scholze, B. Giordanengo, Christian Laubis, 2009 .

Band-edge photoluminescence of AlN epilayers

Hongxing Jiang, M. Nakarmi, Jingyu Lin, 2002 .

Structural phase behavior in II–VI semiconductor nanoparticles

C. Sorensen, Hongxing Jiang, Jingyu Lin, 1995 .

Enhancement of 1.5 μm emission under 980 nm resonant excitation in Er and Yb co-doped GaN epilayers

Hongxing Jiang, Qinglin Wang, Jingyu Lin, 2016 .

Erbium-doped a-plane GaN epilayers synthesized by metal-organic chemical vapor deposition

Hongxing Jiang, Jingyu Lin, Jing Li, 2015 .

Erbium-doped AlN epilayers synthesized by metal-organic chemical vapor deposition

Hongxing Jiang, Jingyu Lin, T. Tahtamouni, 2015 .

Valence band structure of AlN probed by photoluminescence

Hongxing Jiang, Jingyu Lin, A. Sedhain, 2008 .

Exciton localization in AlGaN alloys

Hongxing Jiang, N. Nepal, M. Nakarmi, 2006 .

Mg acceptor level in InN epilayers probed by photoluminescence

Hongxing Jiang, N. Nepal, Jingyu Lin, 2007 .

Linewidths of excitonic luminescence transitions in AlGaN alloys

Hongxing Jiang, Jingyu Lin, Jing Li, 2001 .

Acceptor-bound exciton recombination dynamics in p-type GaN

M. Khan, M. Smith, Hongxing Jiang, 1995 .

Deep ultraviolet picosecond time-resolved photoluminescence studies of AlN epilayers

Hongxing Jiang, M. Nakarmi, Jingyu Lin, 2003 .

Toward High Efficiency at High Temperatures: Recent Progress and Prospects on InGaN-Based Solar Cells

Hongxing Jiang, Xuanqi Huang, Yuji Zhao, 2022, Materials Today Energy.

Structure and Photoluminescence Study of TiO2 Nanoneedle Texture along Vertically Aligned Carbon Nanofiber Arrays

Hongxing Jiang, Jianwei Liu, Jun Li, 2008 .

Time-Resolved Photoluminescence Studies of In x Ga 1−x As 1−y N y

E. Jones, A. Allerman, M. Smith, 1999 .

Synthesis and properties of Cd/sub 1-x/Mn/sub x/S diluted magnetic semiconductor nanoparticles

C. Sorensen, M. Smith, Hongxing Jiang, 1994 .

Semiconduct or lasers: Expanding into blue and green

Hongxing Jiang, Jingyu Lin, 2011 .

Synthesis and properties of Cd1−xMnxS diluted magnetic semiconductor ultrafine particles

C. Sorensen, Hongxing Jiang, Jingyu Lin, 1997 .

Crystal field analysis of rare-earth ions energy levels in GaN

Hongxing Jiang, J. Zavada, M. Brik, 2014 .

Mechanisms of band‐edge emission in Mg‐doped p‐type GaN

Hadis Morkoç, Guangde Chen, Andrei Botchkarev, 1996 .

SiO2/TiO2 distributed Bragg reflector near 1.5 μm fabricated by e-beam evaporation

Hongxing Jiang, Jingyu Lin, Jing Li, 2013 .

Ultraviolet photoluminescence from ferromagnetic Fe-doped AlN nanorods

S. Lau, Jingsheng Chen, Hongxing Jiang, 2007 .

Hexagonal boron nitride epitaxial layers as neutron detector materials

Rajendra Dahal, S. Majety, Jing Li, 2011 .

High quality AlN for deep UV photodetectors

Hongxing Jiang, H. Harris, S. Nikishin, 2009 .

Fabrication and characterization of solid-state thermal neutron detectors based on hexagonal boron nitride epilayers

Jing Li, S. Majety, Hongxing Jiang, 2014 .

Investigation of radiative tunneling in GaN/InGaN single quantum well light-emitting diodes

K. H. Kim, J. Kretchmer, S. LeBoeuf, 2002 .

Nature of deep center emissions in GaN

Jing Li, Hongxing Jiang, A. Sedhain, 2010 .

Hydrogen generation by solar water splitting using p-InGaN photoelectrochemical cells

Jing Li, Hongxing Jiang, B. N. Pantha, 2010 .

Studies of field-induced nonequilibrium electron transport in an InxGa1−xN (x≅0.6) epilayer grown on GaN

K. H. Kim, Hongxing Jiang, D. Ferry, 2003 .

III-nitride-based planar lightwave circuits for long wavelength optical communications

Rongqing Hui, Yueting Wan, Jing Li, 2005 .

Fundamental optical transitions in GaN

M. Khan, M. Smith, Hongxing Jiang, 1996 .

Effects of double layer AlN buffer layers on properties of Si-doped AlxGa1−xN for improved performance of deep ultraviolet light emitting diodes

Hongxing Jiang, Jingyu Lin, T. Tahtamouni, 2013 .

High-Quality Al-Rich AlGaN Alloys

Hongxing Jiang, Jingyu Lin, B. Pantha, 2012 .

Growth and photoluminescence studies of Al-rich AlN∕AlxGa1−xN quantum wells

Neeraj Nepal, Hongxing Jiang, W. W. Chow, 2006 .

Temperature and compositional dependence of the energy band gap of AlGaN alloys

Jing Li, Neeraj Nepal, Mim Lal Nakarmi, 2005 .

Unique optical properties of AlGaN alloys and related ultraviolet emitters

K. B. Nam, Mim Lal Nakarmi, Hongxing Jiang, 2004 .

Time-resolved photoluminescence studies of an ionized donor-bound exciton in GaN

Hongxing Jiang, Jingyu Lin, J. Li, 1999 .

InGaN/GaN multiple quantum well solar cells with long operating wavelengths

Rajendra Dahal, Jing Li, Hongxing Jiang, 2009 .

Time-resolved photoluminescence studies of InxGa1−xAs1−yNy

A. A. Allerman, Sarah Kurtz, Hongxing Jiang, 2000 .

InGaN/GaN multiple quantum well concentrator solar cells

Jing Li, Rajendra Dahal, Hongxing Jiang, 2010 .

The origin of deep-level impurity transitions in hexagonal boron nitride

Jing Li, Hongxing Jiang, Hongxing Jiang, 2015 .

Origin of background electron concentration in InxGa1-xN alloys

Hongxing Jiang, Jingyu Lin, B. Pantha, 2011 .

Electrical transport properties of hexagonal boron nitride epilayers

Hongxing Jiang, Jingyu Lin, Jing Li, 2021, Ultrawide Bandgap Semiconductors.

Hexagonal boron nitride: Epitaxial growth and device applications

Hongxing Jiang, Jingyu Lin, Jing Li, 2020 .

Hexagonal boron nitride neutron detectors with high detection efficiencies

J. Lin, Hongxing Jiang, Jingyu Lin, 2018 .

Toward achieving flexible and high sensitivity hexagonal boron nitride neutron detectors

Hongxing Jiang, Jingyu Lin, Jing Li, 2017 .

Hexagonal boron nitride thin film thermal neutron detectors with high energy resolution of the reaction products

Jing Li, S. Majety, Hongxing Jiang, 2015 .

Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys

Neeraj Nepal, Mim Lal Nakarmi, Hongxing Jiang, 2009 .

Review—hexagonal boron nitride epilayers: Growth, optical properties and device applications

Hongxing Jiang, Hongxing Jiang, Jingyu Lin, 2017 .

Two-dimensional excitons in three-dimensional hexagonal boron nitride

Hongxing Jiang, James H. Edgar, Jingyu Lin, 2013 .

Metastability and persistent photoconductivity in Mg‐doped p‐type GaN

M. Asif Khan, Jingyu Lin, M. Khan, 1996 .

Nitride deep-ultraviolet light-emitting diodes with microlens array

Zhaoyang Fan, K. H. Kim, Hongxing Jiang, 2005 .

Mg acceptor level in AlN probed by deep ultraviolet photoluminescence

Jing Li, K. B. Nam, Mim Lal Nakarmi, 2003 .

AlN: Properties and Applications

Hongxing Jiang, Jingyu Lin, A. Sedhain, 2011 .

Enhanced p-type conduction in GaN and AlGaN by Mg-δ-doping

J. Li, Mim Lal Nakarmi, Hongxing Jiang, 2003 .

Deep impurity transitions involving cation vacancies and complexes in AlGaN alloys

K. B. Nam, Mim Lal Nakarmi, Hongxing Jiang, 2005 .

Optical and electrical properties of Al-rich AlGaN alloys

K. B. Nam, Hongxing Jiang, Jingyu Lin, 2001 .

Electrical and optical properties of p-type InGaN

Hongxing Jiang, Jingyu Lin, Jing Li, 2009 .

InGaN/GaN quantum well interconnected microdisk light emitting diodes

Jing Li, Hongxing Jiang, Jingyu Lin, 2000 .

Advances in III-nitride micro-size light emitters

Hongxing Jiang, Jingyu Lin, Hongxing Jiang, 2001 .

Electroluminescent properties of erbium-doped III-N light-emitting diodes

Hongxing Jiang, J. Zavada, B. Hertog, 2004 .

High mobility InN epilayers grown on AlN epilayer templates

Hongxing Jiang, Neelam Khan, A. Sedhain, 2008 .

Erbium-Doped AlInGaN Alloys as High-Temperature Thermoelectric Materials

Hongxing Jiang, Jingyu Lin, Jing Li, 2011 .

Telecommunication-Wavelength Lasing in Er-doped GaN Multiple Quantum Wells at Room Temperature

Hongxing Jiang, J. Zavada, N. Vinh, 2018 .

Current injection 154 µm light-emitting devices based on Er-doped GaN/AlGaN multiple quantum wells

Hongxing Jiang, Jingyu Lin, Jing Li, 2016 .

Synthesis and optical characterization of erbium-doped III-N double heterostructures

Hongxing Jiang, J. Zavada, H. Jenkinson, 2003 .

Optical properties of GaN/Er:GaN/GaN core–cladding planar waveguides

Hongxing Jiang, Jingyu Lin, Jing Li, 2019, Applied Physics Express.

Toward the realization of erbium-doped GaN bulk crystals as a gain medium for high energy lasers

Hongxing Jiang, Jingyu Lin, Jing Li, 2016 .

Refractive index of erbium doped GaN thin films

Hongxing Jiang, J. Zavada, Jingyu Lin, 2014 .

Excitation cross section of erbium-doped GaN waveguides under 980 nm optical pumping

R. Hui, Hongxing Jiang, Jingyu Lin, 2014 .

Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition

Hongxing Jiang, J. Zavada, N. Nepal, 2006 .

Resonant excitation cross-sections of erbium in freestanding GaN bulk crystals

Hongxing Jiang, Jingyu Lin, Jing Li, 2018 .

Excitation and emission mechanisms of Er:GaN gain medium in 1.5 μm region

Hongxing Jiang, Jingyu Lin, Jilu Li, 2017 .

Optical excitation cross section of erbium in GaN.

Hongxing Jiang, J. Zavada, Jingyu Lin, 2013, Applied optics.

Formation energy of optically active Er3+ centers in Er doped GaN

Hongxing Jiang, J. Zavada, Jingyu Lin, 2012 .

Optical and magneto-optical properties of erbium doped InGaN and GaN epilayers

Hongxing Jiang, J. Zavada, V. Dierolf, 2011 .

Erbium doped GaN synthesized by hydride vapor-phase epitaxy

Hongxing Jiang, Jingyu Lin, D. Jeon, 2015 .

Probing of local alloy disorder in InGaN using Er3+ ions

Hongxing Jiang, J. Zavada, Jingyu Lin, 2014 .

Current Injection Emitters at 1.54 µm Based on Erbium Doped GaN p-i-n Structures

Hongxing Jiang, J. Zavada, Jingyu Lin, 2012 .

Near infrared photonic devices based on Er-doped GaN and InGaN

Hongxing Jiang, J. Zavada, R. Dahal, 2011 .

Spectroscopic studies of Er-centers in MOCVD grown GaN layers highly doped with Er

Hongxing Jiang, J. Zavada, Jingyu Lin, 2008 .

The origin of 2.78 eV emission and yellow coloration in bulk AlN substrates

Hongxing Jiang, Jingyu Lin, J. Edgar, 2009 .

Temperature dependence of the energy bandgap of multi-layer hexagonal boron nitride

J. Lin, Hongxing Jiang, Jingyu Lin, 2017 .

The origins of near band-edge transitions in hexagonal boron nitride epilayers

Hongxing Jiang, Jingyu Lin, Jing Li, 2016 .

Charge carrier transport properties in layer structured hexagonal boron nitride

Hongxing Jiang, Jingyu Lin, Jing Li, 2014 .

Correlation between optoelectronic and structural properties and epilayer thickness of AlN

David W. Weyburne, Rajendra Dahal, Neeraj Nepal, 2007 .

Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction

Joan M. Redwing, Hongxing Jiang, Jingyu Lin, 2000 .

Structure and spin-glass properties of Cd/sub 0.5/Mn/sub 0.5/S diluted magnetic semiconductor quantum dots

C. Sorensen, Hongxing Jiang, Jingyu Lin, 1995 .

A study of the Au/Ni ohmic contact on p-GaN

Hongxing Jiang, T. E. Haynes, Jingyu Lin, 2000 .

Evidence for bistable defects in 6H-SiC

J. Lin, Hongxing Jiang, Jingyu Lin, 1994 .

Beryllium Doped p-type GaN Grown by Metal-Organic Chemical Vapor Deposition

Hongxing Jiang, Jingyu Lin, T. Tahtamouni, 1987 .

Persistent photoconductivity in II‐VI and III‐V semiconductor alloys and a novel infrared detector

J. Lin, Hongxing Jiang, Jingyu Lin, 1991 .

Neutral‐donor‐bound exciton recombination dynamics in GaN grown by metalorganic chemical vapor deposition

M. Khan, M. Smith, Hongxing Jiang, 1995 .

Beryllium acceptor binding energy in AlN

Hongxing Jiang, Jingyu Lin, Jing Li, 2008 .

Growth and photoluminescence studies of Zn-doped AlN epilayers

Neeraj Nepal, Mim Lal Nakarmi, Hongxing Jiang, 2006 .

Development of nitride microLEDs and displays

Hongxing Jiang, Jingyu Lin, 2021 .

Nature of Mg impurities in GaN

Hadis Morkoç, Hongxing Jiang, Andrei Botchkarev, 1996 .

III-Nitride Micro-Emitter Arrays

Hongxing Jiang, Zhaoyang Fan, Jingyu Lin, 2008 .

Persistent photoconductivity in Cd0.7Zn0.3Se mixed crystals

Hongxing Jiang, Jingyu Lin, L. Zu, 1990 .

DX centers in Al0.34Ga0.66As amorphous thin films

Hongxing Jiang, Jingyu Lin, A. Dissanayake, 1993 .

BAND STRUCTURE OF NON-IDEAL SEMICONDUCTOR SUPERLATTICES

Hongxing Jiang, Jingyu Lin, 1987 .

Effects of unique band structure of h-BN probed by photocurrent excitation spectroscopy

Hongxing Jiang, Jingyu Lin, Jing Li, 2022 .

Sublimation growth of aluminum nitride crystals

Neeraj Nepal, Hongxing Jiang, James H. Edgar, 2006 .

Optical properties of strain-free AlN nanowires grown by molecular beam epitaxy on Si substrates

Z. Mi, J. Lin, Hongxing Jiang, 2014 .

Correlation between biaxial stress and free exciton transition in AlN epilayers

Hongxing Jiang, N. Nepal, M. Nakarmi, 2007 .

AlGaN-based ultraviolet light-emitting diodes grown on AlN epilayers

Mim Lal Nakarmi, Zhaoyang Fan, Hongxing Jiang, 2004 .

The origins of leaky characteristics of Schottky diodes on p-GaN

J. Lin, Hongxing Jiang, D. Qiao, 2003 .

Probing Boron Vacancy Complexes in h-BN Semi-Bulk Crystals Synthesized by Hydride Vapor Phase Epitaxy

Hongxing Jiang, Jingyu Lin, Jing Li, 2023, Crystals.

Higher lying conduction band in GaN and AlN probed by photoluminescence spectroscopy

Hongxing Jiang, N. Nepal, M. Nakarmi, 2006 .

Optical properties of GaN/AlN multiple quantum wells

Hongxing Jiang, Tai-Yuan Lin, Yanguang Chen, 2004 .

How we made the microLED

Hongxing Jiang, Jingyu Lin, 2023, Nature Electronics.

Optical and electrical properties of Mg-doped AlN nanowires grown by molecular beam epitaxy

Zetian Mi, Hongxing Jiang, Songrui Zhao, 2015 .

Optoelectronic properties of hexagonal boron nitride epilayers

J. Y. Lin, H. X. Jiang, X. K. Cao, 2013, Photonics West - Optoelectronic Materials and Devices.

Nitride micro-LEDs and beyond--a decade progress review.

H X Jiang, J Y Lin, J. Lin, 2013, Optics express.

AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors (MOSHFETs) with the Delta-Doped Barrier Layer

J. Lin, Hongxing Jiang, J. Bardwell, 2002 .

Deep Ultraviolet Photoluminescence Studies of AlN Photonic Crystals

Hongxing Jiang, J. Shakya, N. Nepal, 2006 .

Optical Properties of Mg-GaN, GaN/AlGaN SCH structures, and GaN on ZnO Substrates

D. C. Reynolds, H. Morkoç, A. Salvador, 1995 .

Time-Resolved Photoluminescence Studies of Indium-Rich InGaN Alloys

Hongxing Jiang, Jingyu Lin, Chen Guang-de, 2005 .

Epitaxial growth and time-resolved photoluminescence studies of AIN epilayers

K. B. Nam, Mim Lal Nakarmi, Hongxing Jiang, 2003, SPIE OPTO.