Bo Liu

发表

Effect of high-temperature buffer thickness on quality of AlN epilayer grown on sapphire substrate by metalorganic chemical vapor deposition

S. Cai, S. Dun, Zhihong Feng, 2013 .

Influence of drain bias on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors

Zhaojun Lin, S. Cai, S. Dun, 2013 .

Directly extracting both threshold voltage and series resistance from the conductance—voltage curve of an AlGaN/GaN Schottky diode

Zhaojun Lin, S. Cai, T. Han, 2013 .

Trap behaviors in AlGaN–GaN heterostructures by C–V characterization

Wei Zhou, Zhihong Feng, Bo Liu, 2009 .

10-GHz 4.69-W/mm InAlN/GaN HFET on sapphire substrate

S. Cai, S. Dun, Zhihong Feng, 2012 .

Micro‐Raman spectroscopy observation of field‐induced strain relaxation in AlGaN/GaN heterojunction field‐effect transistors

S. Cai, Yang Jiang, S. Dun, 2012 .

Unstrained InAlN/GaN heterostructures grown on sapphire substrates by MOCVD

Yuanjie Lü, Shaobo Dun, Bo Liu, 2014 .

S-Band 300 W Output SiC MESFET

J. Mo, S. Cai, Jia Li, 2013 .