Y. Oh

发表

Electronic Structure of Oxygen Interstitial Defects in Amorphous In-Ga-Zn-O Semiconductors and Implications for Device Behavior

K. Chang, Ji-Sang Park, K. Chang, 2015 .

Harvesting electrical energy from carbon nanotube yarn twist

Na Li, Changsoon Choi, Moon Kim, 2017, Science.

Nanopatterning of self-assembled monolayers on Si-surfaces with AFM lithography

Haiwon Lee, Wonbae Lee, Y. Oh, 2001 .

Three-dimensional buckled honeycomb boron lattice with vacancies as an intermediate phase on the transition pathway from α-B to γ-B

In-Ho Lee, K. Chang, W. Han, 2017 .

Nanolithography of Self-Assembled Zirconium N,N′-Bis(Ethyl Dihydrogen Phosphate)-3,4,9,10-Perylene(Dicarboximide) (Eppi) Layer on Silicon Surface

Haiwon Lee, Y. Oh, S. Kim, 2000 .

Atomic Force Microscope Based Nanolithography of Self-Assembled Organosilane Monolayer Resists

Y. Oh, Jinchul Kim, HaiwonLee Shin, 1998 .

The effects of electric field and gate bias pulse on the migration and stability of ionized oxygen vacancies in amorphous In–Ga–Zn–O thin film transistors

K. Chang, Y. Oh, H. Noh, 2015, Science and technology of advanced materials.

Computational search for direct band gap silicon crystals

In-Ho Lee, Kee-Joo Chang, Young Jun Oh, 2014 .

Systematic study of electronic structure and band alignment of monolayer transition metal dichalcogenides in Van der Waals heterostructures

R. Wallace, Kyeongjae Cho, L. Colombo, 2016 .

Dipole-allowed direct band gap silicon superlattices

In-Ho Lee, Sunghyun Kim, Young Jun Oh, 2015, Scientific Reports.

Hybrid functional versus quasiparticle calculations for the Schottky barrier and effective work function at TiN/HfO 2 interface

K. Chang, Y. Oh, Alex Taekyung Lee, 2013 .

Ab initio materials design using conformational space annealing and its application to searching for direct band gap silicon crystals

Jooyoung Lee, In-Ho Lee, Sunghyun Kim, 2016, Comput. Phys. Commun..

First principles study of the Mn-doping effect on the physical and chemical properties of mullite-family Al2SiO5.

Yongping Zheng, Kyeongjae Cho, B. Shan, 2017, Physical chemistry chemical physics : PCCP.

Effects of interface bonding and defects on boron diffusion at Si/SiO2 interface

K. Chang, Y. Oh, Geun-Myeong Kim, 2013 .

Suppression of boron segregation by interface Ge atoms at SiGe/SiO2 interface

K. Chang, Y. Oh, Geun-Myeong Kim, 2014 .

First-principles study of the segregation of boron dopants near the interface between crystalline Si and amorphous SiO2

K. Chang, Y. Oh, H. Noh, 2012 .

Ab initio study of boron segregation and deactivation at Si/SiO2 interface

B. Ryu, J. Bang, K. Chang, 2012 .

Atomic Force Microscope Lithography with Octadecyldimethyl-Methoxysilane Monolayer Resist

Haiwon Lee, Y. Oh, Jinchul Kim, 1999 .

The effect of Al segregation on Schottky barrier height and effective work function in TiAl/TiN/HfO2 gate stacks

K. Chang, Y. Oh, Geun-Myeong Kim, 2016 .

Multitip atomic force microscope lithography system for high throughput nanopatterning

Haiwon Lee, K. Noh, Chulmin Choi, 2011 .

Direct band gap carbon superlattices with efficient optical transition

In-Ho Lee, Jooyoung Lee, K. Chang, 2016, 1601.00420.

Electronic transport across metal-graphene edge contact

Weichao Wang, Geunsik Lee, R. Wallace, 2017 .

Effect of O-vacancy defects on the Schottky barrier heights in Ni/SiO2 and Ni/HfO2 interfaces

K. Chang, Y. Oh, H. Noh, 2012 .

Atomically thin transition metal layers: Atomic layer stabilization and metal-semiconductor transition

Kyeongjae Cho, Jiyoung Kim, M. Sung, 2018 .