Shinhyuk Yang

发表

Effect of In-Ga-Zn-O active layer channel composition on process temperature for flexible oxide thin-film transistors

G. Kim, C. Hwang, Jun-Yong Bak, 2012 .

Characterization of Nonvolatile Memory Behaviors of Al/Poly(vinylidene fluoride–trifluoroethylene)/Al2O3/ZnO Thin-Film Transistors

Sung-Min Yoon, Hiroshi Ishiwara, Doo-Hee Cho, 2010 .

Effects of Chemical Treatments on the Electrical Behaviors of Ferroelectric Poly(vinylidene fluoride-trifluoroethylene) Copolymer for Nonvolatile Memory Device Applications

Byoung-Gon Yu, C. Hwang, Seung-Youl Kang, 2009 .

21.1: Invited Paper: Effect of Channel/Insulator Interface Formation Process on the Oxide TFT Performance

C. Hwang, Oh‐Sang Kwon, Jeong-Ik Lee, 2009 .

Low-Temperature Processed Flexible In–Ga–Zn–O Thin-Film Transistors Exhibiting High Electrical Performance

Sung-Min Yoon, Jin Jang, Chi-Sun Hwang, 2011, IEEE Electron Device Letters.

Drain bias effect on the instability of amorphous indium gallium zinc oxide thin film transistor

J. Jeon, J. Seo, Shinhyuk Yang, 2013 .

Suppression in the negative bias illumination instability of Zn-Sn-O transistor using oxygen plasma treatment

Jin Jang, Chi-Sun Hwang, Shinhyuk Yang, 2011 .

Enhanced bias illumination stability of oxide thin film transistor through insertion of ultrathin positive charge barrier into active material

Chi-Sun Hwang, Shinhyuk Yang, Himchan Oh, 2011 .

Effect of hydrogen in the gate insulator on the bottom gate oxide TFT

C. Hwang, Sung‐Min Yoon, Shinhyuk Yang, 2010 .

Improvement in the photon-induced bias stability of Al–Sn–Zn–In–O thin film transistors by adopting AlOx passivation layer

Jin Jang, Doo-Hee Cho, Chi-Sun Hwang, 2010 .

Transparent Oxide Thin-Film Transistors Composed of Al and Sn-doped Zinc Indium Oxide

C. Hwang, H. Chu, C. Byun, 2009, IEEE Electron Device Letters.

P‐20: Post‐Annealing and Passivations of Transparent Bottom Gate IGZO Thin Film Transistors

Sung-Min Yoon, Doo-Hee Cho, Chi-Sun Hwang, 2008 .

High-Performance Al–Sn–Zn–In–O Thin-Film Transistors: Impact of Passivation Layer on Device Stability

Jae Kyeong Jeong, Jin Jang, C. Hwang, 2010, IEEE Electron Device Letters.

A protective layer on the active layer of Al‐Zn‐Sn‐O thin‐film transistors for transparent AMOLEDs

C. Hwang, C. Byun, Sung‐Min Yoon, 2009 .

Transparent Al-Zn-Sn-O Thin Film Transistors Prepared at Low Temperature

Doo-Hee Cho, Chi-Sun Hwang, Shinhyuk Yang, 2008 .

Origin of Degradation Phenomenon under Drain Bias Stress for Oxide Thin Film Transistors using IGZO and IGO Channel Layers

Seungwu Han, H. Ryu, C. Hwang, 2015, Scientific Reports.

Effect of Double-Layered Al2O3 Gate Insulator on the Bias Stability of ZnO Thin Film Transistors

C. Hwang, C. Byun, Sung‐Min Yoon, 2010 .

Jin Jang, Chan Eon Park, C. Hwang, 2011 .

Environmentally Stable Transparent Organic/Oxide Hybrid Transistor Based on an Oxide Semiconductor and a Polyimide Gate Insulator

Jin Jang, T. Ahn, C. Hwang, 2010, IEEE Electron Device Letters.

Effect of ZnO channel thickness on the device behaviour of nonvolatile memory thin film transistors with double-layered gate insulators of Al2O3 and ferroelectric polymer

Byoung-Gon Yu, C. Hwang, Seung-Youl Kang, 2009 .

Polymeric ferroelectric and oxide semiconductor-based fully transparent memristor cell

Sung-Min Yoon, Chi-Sun Hwang, Shinhyuk Yang, 2011 .

Nonvolatile memory thin-film transistors using an organic ferroelectric gate insulator and an oxide semiconducting channel

Byoung-Gon Yu, C. Hwang, C. Byun, 2011 .

Effects of Interfacial Dielectric Layers on the Electrical Performance of Top‐Gate In‐Ga‐Zn‐Oxide Thin‐Film Transistors

Sung Min Yoon, Jong-Ho Lee, Sang-Hee Ko Park, 2009 .

Negative-Bias Light Stress Instability Mechanisms of the Oxide-Semiconductor Thin-Film Transistors Using In–Ga-O Channel Layers Deposited With Different Oxygen Partial Pressures

H. Ryu, C. Hwang, Jun-Yong Bak, 2014, IEEE Transactions on Electron Devices.

Light Response of Top Gate InGaZnO Thin Film Transistor

J. Jeon, C. Hwang, Sung‐Min Yoon, 2011 .

Oxide Semiconductor-Based Organic/Inorganic Hybrid Dual-Gate Nonvolatile Memory Thin-Film Transistor

C. Hwang, C. Byun, Sung‐Min Yoon, 2011, IEEE Transactions on Electron Devices.

An ‘aqueous route’ for the fabrication of low-temperature-processable oxide flexible transparent thin-film transistors on plastic substrates

Shinhyuk Yang, Byeong-Soo Bae, Hyungjin Park, 2013 .

Transparent and Photo‐stable ZnO Thin‐film Transistors to Drive an Active Matrix Organic‐Light‐ Emitting‐Diode Display Panel

Kimoon Lee, Chi-Sun Hwang, Shinhyuk Yang, 2009 .

Fully Transparent Non‐volatile Memory Thin‐Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below 200 °C

Sung-Min Yoon, Doo-Hee Cho, Chi-Sun Hwang, 2010 .

Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With $\hbox{SiN}_{x}$ and $ \hbox{SiO}_{2}$ Gate Dielectrics

Chi-Sun Hwang, Shinhyuk Yang, Yeon-Gon Mo, 2010, IEEE Electron Device Letters.

21.2: Al and Sn‐Doped Zinc Indium Oxide Thin Film Transistors for AMOLED Back‐Plane

Sung-Min Yoon, Doo-Hee Cho, Chi-Sun Hwang, 2009 .

in a new rodent model of genetic hypertension -receptor blockade restores vasoreactivity

C. Hwang, Dayrl P. Briggs, C. Byun, 2015 .

Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications

C. Hwang, C. Byun, Sung‐Min Yoon, 2010 .

Photon-accelerated negative bias instability involving subgap states creation in amorphous In–Ga–Zn–O thin film transistor

Sung-Min Yoon, Chi-Sun Hwang, Shinhyuk Yang, 2010 .

Improved Stability of Atomic Layer Deposited ZnO Thin Film Transistor by Intercycle Oxidation

Sang-Hee Ko Park, Chi-Sun Hwang, Shinhyuk Yang, 2012 .

Impact of Sn/Zn ratio on the gate bias and temperature-induced instability of Zn-In-Sn-O thin film transistors

Chi-Sun Hwang, Shinhyuk Yang, Jae Kyeong Jeong, 2009 .

High performance thin film transistor with cosputtered amorphous Zn-In-Sn-O channel: Combinatorial approach

Chi-Sun Hwang, Shinhyuk Yang, Jae Kyeong Jeong, 2009 .

Transparent Al–In–Zn–O Oxide semiconducting films with various in composition for thin-film transistor applications

Jun-Yong Bak, Sung‐Min Yoon, Shinhyuk Yang, 2013 .

Device reliability under electrical stress and photo response of oxide TFTs

J. Jeon, C. Hwang, Sung‐Min Yoon, 2010 .

Nonvolatile Memory Thin Film Transistors Using Spin-Coated Amorphous Zinc Indium Oxide Channel and Ferroelectric Copolymer

C. Hwang, H. Ishiwara, C. Byun, 2010 .

Nondestructive Readout Operation of Oxide-Thin-Film-Transistor-Based 2T-Type Nonvolatile Memory Cell

C. Hwang, Seung-Youl Kang, C. Byun, 2010, IEEE Electron Device Letters.

Channel Protection Layer Effect on the Performance of Oxide TFTs

Sung Min Yoon, Sang-Hee Ko Park, Doo-Hee Cho, 2009 .

Ferroelectric Copolymer-Based Plastic Memory Transistors

C. Hwang, C. Byun, Sung‐Min Yoon, 2011 .

"See-Through" Nonvolatile Memory Thin-Film Transistors Using a Ferroelectric Copolymer Gate Insulator and an Oxide Semiconductor Channel

C. Hwang, Oh‐Sang Kwon, C. Byun, 2011 .

Al-Zn-Sn-O Thin Film Transistors with Top and Bottom Gate Structure for AMOLED

Sung Min Yoon, Kyoung-Ik Cho, Sang-Hee Ko Park, 2009 .

42.3: Transparent ZnO Thin Film Transistor for the Application of High Aperture Ratio Bottom Emission AM‐OLED Display

Kimoon Lee, Chi-Sun Hwang, Shinhyuk Yang, 2008 .

Impact of device configuration on the temperature instability of Al–Zn–Sn–O thin film transistors

Doo-Hee Cho, Chi-Sun Hwang, Shinhyuk Yang, 2009 .

Solution-Processed Zinc Indium Oxide Transparent Nonvolatile Memory Thin-Film Transistors with Polymeric Ferroelectric Gate Insulator

C. Hwang, H. Ishiwara, C. Byun, 2010 .

Transition of dominant instability mechanism depending on negative gate bias under illumination in amorphous In-Ga-Zn-O thin film transistor

Sung-Min Yoon, Chi-Sun Hwang, Shinhyuk Yang, 2011 .

Analytical Modeling of IGZO Thin-Film Transistors Based on the Exponential Distribution of Deep and Tail States

Sung-Min Yoon, Doo-Hee Cho, Chi-Sun Hwang, 2009 .

P‐41: Investigation of the Photon‐Enhanced Bias Instability of InGaZnO TFTs for the Application of Transparent AM‐OLED Displays

C. Hwang, Oh‐Sang Kwon, Eun‐Suk Park, 2010 .

Nonvolatile memory transistors using solution-processed zinc-tin oxide and ferroelectric poly(vinylidene fluoride-trifluoroethylene)

C. Hwang, H. Ishiwara, C. Byun, 2010 .

18.1: Invited Paper: Oxide TFT Driving Transparent AMOLED

C. Byun, Shinhyuk Yang, M. Ryu, 2010 .

Flexible Nonvolatile Memory Thin-Film Transistor Using Ferroelectric Copolymer Gate Insulator and Oxide Semiconducting Channel

Sung‐Min Yoon, Shinhyuk Yang, S. Park, 2011 .

Bending characteristics of ferroelectric poly(vinylidene fluoride trifluoroethylene) capacitors fabricated on flexible polyethylene naphthalate substrate

Sung-Min Yoon, Hiroshi Ishiwara, Shinhyuk Yang, 2011 .

Impact of interface controlling layer of Al2O3 for improving the retention behaviors of In-Ga-Zn oxide-based ferroelectric memory transistor

Sung-Min Yoon, Hiroshi Ishiwara, Chi-Sun Hwang, 2010 .

P‐8: Effects of Active Thickness in Oxide Semiconductor TFTs

H. Chu, C. Byun, Sung‐Min Yoon, 2009 .