Byeonghun Yun

A 250-GHz 12.6-dB Gain and 3.8-dBm Psat Power Amplifier in 65-nm CMOS Adopting Dual-Shunt Elements Based Gmax-Core

Sang-Gug Lee, Byeonghun Yun, Dae-Woong Park, 2021, IEEE Microwave and Wireless Components Letters.

A D-Band Power Amplifier in 65-nm CMOS by Adopting Simultaneous Output Power-and Gain-Matched Gmax-Core

Dzuhri Radityo Utomo, Hafiz Usman Mahmood, Sang-Gug Lee, 2021, IEEE Access.

A D-Band High-Gain and Low-Power LNA in 65-nm CMOS by Adopting Simultaneous Noise- and Input-Matched Gmax-Core

Hafiz Usman Mahmood, Sang-Gug Lee, Doyoon Kim, 2021, IEEE Transactions on Microwave Theory and Techniques.

Design of High-Gain Sub-THz Regenerative Amplifiers Based on Double-Gmax Gain Boosting Technique

Dzuhri Radityo Utomo, Byeonghun Yun, Sang-Gug Lee, 2021, IEEE Journal of Solid-State Circuits.

A 237–263 GHz CMOS Frequency Doubler with 0.9 dBm Output Power and 2.87 % Power Efficiency Based on Harmonic Matched $G_{\max}$-Core

Byeonghun Yun, Byeong-Taek Moon, Sang-Gug Lee, 2022, 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022.

Analysis and Design of Power-Efficient H-Band CMOS Frequency Doubler Employing Gain Boosting and Harmonic Enhancing Techniques

Jusung Kim, Byeonghun Yun, Byeong-Taek Moon, 2023, IEEE Access.