Hyuk Soon Choi

Computational Framework for Modeling of Multi-Scale Processes

Jongseob Kim, A. Fedoseyev, V. Kolobov, 2006 .

1.6kV, 2.9 mΩ cm2 normally-off p-GaN HEMT device

Kinam Kim, I. Yoo, U. Chung, 2012, 2012 24th International Symposium on Power Semiconductor Devices and ICs.

p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current

U. Chung, Jongseob Kim, Jong-bong Park, 2013, IEEE Electron Device Letters.

Ab initio study of the complexation of benzene with ammonium cations

Kwang S. Kim, Seung Joo Cho, Sang Joo Lee, 1995 .

Short Channel Characteristics of Gallium–Indium–Zinc–Oxide Thin Film Transistors for Three-Dimensional Stacking Memory

Eunha Lee, Huaxiang Yin, Chang Jung Kim, 2008, IEEE Electron Device Letters.

A theoretical investigation of the nature of the π-H interaction in ethene–H2O, benzene–H2O, and benzene–(H2O)2

Kwang S. Kim, Sang Joo Lee, Jin Yong Lee, 1999 .

Source-Connected p-GaN Gate HEMTs for Increased Threshold Voltage

U-In Chung, Jaikwang Shin, Hyoji Choi, 2013, IEEE Electron Device Letters.

Quantum mechanical probabilistic structure of the benzene-water complex

Jin Yong Lee, Jongseob Kim, Jee Hwan Jang, 1997 .

High threshold voltage p-GaN gate power devices on 200 mm Si

U-In Chung, Hyun-Sik Choi, Woochul Jeon, 2013, 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Ab initio studies of neutral and anionic p-benzoquinone–water clusters

T. K. Manojkumar, Kwang S. Kim, P. Tarakeshwar, 2003 .