L. Breaux

发表

Very low defect remote hydrogen plasma clean of Si (100) for homoepitaxy

B. Anthony, T. Hsu, L. Breaux, 1990 .

Defect microstructure in single crystal silicon thin films grown at 150° C-305° C by remote plasma-enhanced chemical vapor deposition

C. Magee, B. Anthony, T. Hsu, 1990 .

Remote plasma-enhanced CVD of silicon: Reaction kinetics as a function of growth parameters

S. Banerjee, B. Anthony, T. Hsu, 1990 .

In situ cleaning of silicon substrate surfaces by remote plasma-excited hydrogen

S. Banerjee, B. Anthony, T. Hsu, 1989 .

Hydrogen Passivation of Si(100) by Remote Hydrogen Plasma Treatment

S. Banerjee, H. Marcus, B. Anthony, 1990 .

Rheed Observations of Silicon (100) Surface Reconstruction after Remote Hydrogen Plasma Cleaning

S. Banerjee, B. Anthony, T. Hsu, 1989 .

Design optimization of a six meter toroidal grating monochromator

L. Breaux, J. L. Erskine, 1986 .

Homoepitaxial films grown on Si (100) at 150 °C by remote plasma‐enhanced chemical vapor deposition

L. Breaux, Al F. Tasch, B. Anthony, 1989 .

Defect microstructure in low temperature epitaxial silicon grown by RPCVD

B. Anthony, T. Hsu, L. Breaux, 1990 .