A. Tasch

发表

Very low defect remote hydrogen plasma clean of Si (100) for homoepitaxy

B. Anthony, T. Hsu, L. Breaux, 1990 .

Accurate and efficient two-dimensional modeling of boron implantation into single-crystal silicon

A. Tasch, K. Klein, C. Park, 1991, International Electron Devices Meeting 1991 [Technical Digest].

Improved efficiency in Monte Carlo simulation of ion implanted impurity profiles in single-crystal materials

A. Tasch, S.‐H. Yang, D. Lim, 1995 .

Defect microstructure in single crystal silicon thin films grown at 150° C-305° C by remote plasma-enhanced chemical vapor deposition

C. Magee, B. Anthony, T. Hsu, 1990 .

Monte Carlo simulation of heavy species (Indium and Germanium) ion implantation into silicon

B. Obradovic, Geng Wang, P. Zeitzoff, 1996, Journal of Technology Computer Aided Design TCAD.

Monte Carlo simulation of boron implantation into single-crystal silicon

A. Tasch, Changhae Park, K. Klein, 1992 .

The effect of dose rate on ion implanted impurity profiles in silicon

C. Magee, B. Freer, A. Tasch, 1996 .

Remote plasma-enhanced CVD of silicon: Reaction kinetics as a function of growth parameters

S. Banerjee, B. Anthony, T. Hsu, 1990 .

Ultra-shallow junction formation in silicon using ion implantation

S. Banerjee, A. Tasch, 1996 .

Electrical and reliability characteristics of lead-zirconate-titanate (PZT) ferroelectric thin films for DRAM applications

A. Tasch, A. Tasch, J. Carrano, 1989, International Technical Digest on Electron Devices Meeting.

In situ cleaning of silicon substrate surfaces by remote plasma-excited hydrogen

S. Banerjee, B. Anthony, T. Hsu, 1989 .

Room‐temperature measurements of strong electroabsorption effect in GexSi1−x/Si multiple quantum wells grown by remote plasma‐enhanced chemical vapor deposition

S. Banerjee, J. Campbell, R. Qian, 1993 .

In Situ Low Temperature Cleaning and Passivation of Silicon by Remote Hydrogen Plasma for Silicon-Based Epitaxy

S. Banerjee, S. Thomas, T. Hsu, 1992 .

Hydrogen Passivation of Si(100) by Remote Hydrogen Plasma Treatment

S. Banerjee, H. Marcus, B. Anthony, 1990 .

Rheed Observations of Silicon (100) Surface Reconstruction after Remote Hydrogen Plasma Cleaning

S. Banerjee, B. Anthony, T. Hsu, 1989 .

Hydrogen plasma cleaning of the Si(100) surface: Removal of oxygen and carbon and the etching of Si

S. Banerjee, S. Thomas, R. Qian, 1993 .

The Role of the Lead Zirconate Titanate (PZT)-Pt Interface in the Anomalous Phase Transformation Kinetics in Sputtered Pzt Thin Film Capacitors at Sub-2000 Å Thicknesses

Jack C. Lee, V. Chikarmane, S. Novak, 1991 .

Polarity and Area Dependence of Reliability Characteristics of Sputitered and Sol-Gel Derived Thin Plzt Films for Dram Applications

V. Chikarmane, E. R. Myers, S. Novak, 1991 .

Growth of polycrystalline calcium fluoride via low-temperature organometallic chemical vapor deposition

Richard A. Jones, A. Tasch, A. Cowley, 1989 .

Degradation of insulators in Silicon Selective Epitaxial Growth (SEG) ambient

G. Yeric, R. Bashir, J. Denton, 1995, IEEE Electron Device Letters.

Structural analysis of GexSi1−x/Si layers by remote plasma-enhanced chemical vapor deposition on Si (100)

S. Banerjee, B. Anthony, T. Hsu, 1992 .

Cleaning and passivation of the Si(100) surface by low temperature remote hydrogen plasma treatment for Si epitaxy

H. Marcus, C. Magee, B. Anthony, 1991 .

Electrical and reliability properties of PZT thin films for ULSI DRAM applications

C. Sudhama, V. Chikarmane, A. Tasch, 1991, IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control.

Adsorption and decomposition of diethylsilane and diethylgermane on Si(100): Surface reactions for an atomic layer epitaxial approach to column IV epitaxy

S. Banerjee, J. Ekerdt, J. White, 1995 .

Hydrogen desorption on various H‐terminated Si(100) surfaces due to electron beam irradiation: Experiments and modeling

S. Banerjee, H. Marcus, B. Anthony, 1992 .

Correlation between silicon hydride species and the photoluminescence intensity of porous silicon

Joe C. Campbell, Al F. Tasch, T. Hsu, 1992 .

A detailed physical model for ion implant induced damage in silicon

S. J. Morris, S. Tian, Charles M. Snell, 1998 .

Monte Carlo simulation of ion implantation damage process in silicon

B. Obradovic, A. Tasch, S. Tian, 1996, International Electron Devices Meeting. Technical Digest.

Comparisons of UT-MARLOWE predictions of implant-induced damage with experimentally measured amorphous layer thicknesses

B. Obradovic, A. Tasch, S.‐H. Yang, 1996, Proceedings of 11th International Conference on Ion Implantation Technology.

Modeling of Damage Evolution During Ion Implantation Into Silicon: A Monte Carlo Approach

B. Obradovic, A. Tasch, S. Tian, 1996 .

Ion beams in silicon processing and characterization

Mark E. Law, Michael I. Current, S. T. Picraux, 1997 .

Advances in remote plasma-enhanced chemical vapor deposition for low temperature In situ hydrogen plasma clean and Si and Si1-xGex epitaxy

C. Magee, B. Anthony, T. Hsu, 1992 .

In situ B-doped Si epitaxial films grown at 450‡ C by remote plasma-enhanced chemical vapor deposition: Physical and electrical characterization

C. Magee, S. Thomas, B. Anthony, 1992 .

Evolution of silicon surface morphology during H2 annealing in a rapid thermal chemical vapor deposition system

D. Kwong, B. Kim, S. Unnikrishnan, 1996 .

The impact of crystal cut error on the measured impurity profiles resulting from ion implantation

B. Obradovic, Al F. Tasch, Ying-Chen Chen, 2000 .

Annealing of lead zirconate titanate (65/35) thin films for ultra large scale integration storage dielectric applications: Phase transformation and electrical characteristics

Jiyoung Kim, Jack C. Lee, V. Chikarmane, 1992 .

Modeling of cumulative damage effects on ion-implantation profiles

A. Tasch, Changhae Park, K. Klein, 1991 .

An examination of the effect of dose rate on ion implanted impurity profiles in silicon

C. Magee, B. Freer, A. Tasch, 1995 .

Crystallographic characterization of GexSi1−x/Si superlattices grown by remote plasma‐enhanced chemical vapor deposition

S. Banerjee, L. Rabenberg, C. Magee, 1991 .

Adaptive temperature program ALE of Si1 − xGex/Si heterostructures from Si2H6/Ge2H6

J. Ekerdt, J. White, P. A. Steiner, 1994 .

Growth and High Resolution Tem Characterization of Ge x Si 1−x /Si Hetero-Structures by Remote Plasma-Enhanced Chemical Vapor Deposition

S. Banerjee, S. Thomas, T. Hsu, 1991 .

Growth of Ge-on-Si Structures using Remote Plasma-Enhanced Chemical Vapor Deposition

S. Banerjee, S. Thomas, R. Qian, 1992 .

Low‐temperature growth of GexSi1−x/Si heterostructures on Si(100) by remote plasma‐enhanced chemical vapor deposition

S. Banerjee, C. Magee, B. Anthony, 1991 .

The use of langmuir probe measurements to investigate the reaction mechanisms of remote plasma-enhanced chemical vapor deposition

B. Anthony, T. Hsu, R. Qian, 1991 .

Growth of GexSi1−x/Si heteroepitaxial films by remote plasma chemical vapor deposition

S. Banerjee, L. Rabenberg, C. Magee, 1992 .

Local electron concentration‐dependent electronic stopping power model for Monte Carlo simulation of low‐energy ion implantation in silicon

A. Tasch, Changhae Park, K. Klein, 1990 .

An electronic stopping power model for Monte Carlo and molecular dynamics simulation of ion implantation into silicon

Niels Grønbech-Jensen, A. Tasch, C. Snell, 1996, Proceedings of 11th International Conference on Ion Implantation Technology.

A Computationally Efficient Simulator for Three-Dimensional Monte Carlo Simulation of Ion Implantation into Complex Structures

Geng Wang, Al F. Tasch, Di Li, 2001 .

Monte Carlo simulation of arsenic ion implantation in (100) single-crystal silicon

S. J. Morris, S. Tian, Al F. Tasch, 1996 .

Homoepitaxial films grown on Si (100) at 150 °C by remote plasma‐enhanced chemical vapor deposition

L. Breaux, Al F. Tasch, B. Anthony, 1989 .

Defect microstructure in low temperature epitaxial silicon grown by RPCVD

B. Anthony, T. Hsu, L. Breaux, 1990 .

Oxygen recoil implant from SiO2 layers into single-crystalline silicon

S. Banerjee, Guotao Wang, A. Tasch, 2001 .

A two-dimensional B implantation model for semiconductor process simulation environments

A. Tasch, Changhae Park, K. Klein, 1993 .

Efficient modeling parameter extraction for dual pearson approach to simulation of implanted impurity profiles in silicon

Changhae Park, Kevin M. Klein, Al F. Tasch, 1990 .

Electrical characteristics of long CCD shift registers fabricated using Al-Al 2 O 3 -Al double level metallization

R. W. Brodersen, D. R. Collins, W. C. Rhines, 1973 .

Electrical characteristics of 500-bit Al-Al 2 O 3 -Al CCD shift registers

R. W. Brodersen, D. R. Collins, W. C. Rhines, 1974 .