C. Yen

发表

Impact of an indium oxide/indium-tin oxide mixed structure for GaN-based light-emitting diodes

Wen-Chau Liu, Yi Jung Liu, C. Yen, 2009 .

Improved n+-GaAs/p+-In0.49Ga0.51P/n-GaAs camel-like gate structure for high-breakdown, low-leakage, and high-temperature applications

Wen-Chau Liu, Chin-Chuan Cheng, C. Yen, 2001 .

Characteristics of δ-doped InP/InGaAlAs heterojunction bipolar transistors (HBTs)

Wen-Chau Liu, Chin-Chuan Cheng, C. Yen, 2001 .

Comprehensive study of InGaP–AlxGa1−xAs–GaAs composite-emitter heterojunction bipolar transistors with different thickness of AlxGa1−xAs graded layers

J. Y. Chen, C. Chen, Wen-Chau Liu, 2004 .

Investigation of Amplifying and Switching Characteristics in Double Heterostructure-Emitter Bipolar Transistors

W. Lour, J. Tsai, Wen-Chau Liu, 2007 .

Characteristics Improvement for an n–p–n Heterostructure Optoelectronic Switch by Introducing a Wide-Gap Layer in the Collector

W. Lour, J. Tsai, Wen-Chau Liu, 2007 .

Improved Temperature-Dependent Characteristics of a Sulfur-Passivated AlGaAs ∕ InGaAs ∕ GaAs Pseudomorphic High-Electron-Mobility Transistor

Wen-Chau Liu, C. Yen, C. Hung, 2006 .

Characteristics of a sulfur-passivated InGaP/InGaAs/GaAs heterostructure field-effect transistor

Wen-Chau Liu, C. Yen, Shiou-Ying Cheng, 2005 .

Electrostatic Discharge Performance of GaN-Based Light Emitting Diodes with Naturally Textured p-GaN Layers Grown on Vicinal Sapphires

Wen-Chau Liu, C. Yen, T. Tsai, 2010 .

Performance investigation of GaN-based light-emitting diodes with tiny misorientation of sapphire substrates.

Wen-Chau Liu, C. Yen, T. Tsai, 2010, Optics express.

Influences of sulfur passivation on temperature-dependent characteristics of an AlGaAs/InGaAs/GaAs PHEMT

Wen-Chau Liu, C. Yen, C. Hung, 2006 .

Thermal-stability improvement of a sulfur-passivated InGaP/InGaAs/GaAs HFET

Wen-Chau Liu, C. Yen, H. Chuang, 2006 .

Study of an AlGaInP-Based Light-Emitting Diode With a Modulation-Doped Multiquantum-Well (MD-MQW) Structure

Wen-Chau Liu, C. Yen, T. Tsai, 2009, IEEE Photonics Technology Letters.

On an AlGaInP Light-Emitting Diode With a Modulation-Doped Multiquantum-Well (MD-MQW) Structure

Wen-Chau Liu, C. Yen, T. Tsai, 2009, IEEE Journal of Quantum Electronics.

Influences of surface sulfur treatments on the temperature-dependent characteristics of HBTs

Wen-Chau Liu, C. Yen, C. Chang, 2004 .

Temperature-dependent dc characteristics of an InGaAs∕InGaAsP heterojunction bipolar transistor with an InGaAsP spacer and a composite-collector structure

J. Y. Chen, Wen-Chau Liu, C. Yen, 2004 .

DC characterization of an InP-InGaAs tunneling emitter bipolar transistor (TEBT)

Wen-Chau Liu, Chin-Chuan Cheng, C. Yen, 2003 .

Study of a high-barrier-gate pseudomorphic transistor with a step-compositioned channel and bottomside delta-doped sheet structure

Wen-Chau Liu, C. Yen, Kun-Wei Lin, 2000 .

Characteristics of an InP– InGaAs– InGaAsP HBT

Wen-Chau Liu, C. Yen, Jing-Yuh Chen, 2004 .

Temperature-dependent characteristics of InP/In/sub 0.53/Ga/sub 0.34/Al/sub 0.13/As heterojunction bipolar transistor

Wen-Chau Liu, C. Yen, Kun-Wei Lin, 2000, COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices.

A Study of Composite-Passivation of an InGaP/GaAs Heterojunction Bipolar Transistor

Wen-Chau Liu, C. Yen, C. Hung, 2006 .

Comprehensive Study of Emitter-Ledge Thickness of InGaP/GaAs HBTs

Wen-Chau Liu, C. Yen, Tzu-Pin Chen, 2006, IEEE Transactions on Electron Devices.

Performance enhancement of a heterojunction bipolar transistor (HBT) by two-step passivation

Wen-Chau Liu, C. Yen, C. Hung, 2006 .

Comprehensive study of InGaP/AlxGa1−xAs/GaAs heterojunction bipolar transistors with different doping concentrations of AlxGa1−xAs graded layers

Wen-Chau Liu, C. Yen, H. Chuang, 2004 .

An inverted delta-doped V-shaped InGaP/In/sub x/Ga/sub 1-x/As pseudomorphic high electron mobility transistor

C. Yen, K. Lin, W. Liu, 2000, Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107).

Study of InGaP/GaAs/InGaAs high-barrier gate and heterostructure-channel field-effect transistors

Wen-Chau Liu, C. Yen, Kun-Wei Lin, 2002 .

On an AlGaInP-Based Light-Emitting Diode With an ITO Direct Ohmic Contact Structure

Tsung-Han Tsai, Chih-Hung Yen, Tzu-Pin Chen, 2009, IEEE Electron Device Letters.

A New AlGaInP Multiple-Quantum-Well Light-Emitting Diode With a Thin Carbon-Doped GaP Contact Layer Structure

Tsung-Han Tsai, Chih-Hung Yen, Tzu-Pin Chen, 2008, IEEE Photonics Technology Letters.

On the InGaP/In(x)Ga(1-x)As Pseudomorphic High Electron-Mobility Transistor s with High-Temperature Reliabilities

W. Lour, C. Yen, K. Lin, 2000, 30th European Solid-State Device Research Conference.

Investigation of temperature-dependent characteristics of an n/sup +/-InGaAs/n-GaAs composite doped channel HFET

Kuan-Po Lin, Chin-Chuan Cheng, Kun-Wei Lin, 2001 .

Characteristics of an AlGaInP-Based Light Emitting Diode With an Indium-Tin-Oxide (ITO) Direct Ohmic Contact Structure

Wen-Chau Liu, C. Yen, T. Tsai, 2010, IEEE Journal of Quantum Electronics.

InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature applications

Wen-Chau Liu, Chin-Chuan Cheng, C. Yen, 2000 .

On the InGaP/GaAs/InGaAs camel-like FET for high-breakdown, low-leakage, and high-temperature operations

J. Tsai, Wen-Chau Liu, C. Yen, 2001 .

Characteristics of a GaN-Based Light-Emitting Diode With an Inserted p-GaN/i-InGaN Superlattice Structure

Tsung-Han Tsai, Chih-Hung Yen, Tsung-Yuan Tsai, 2010, IEEE Journal of Quantum Electronics.

On a GaN-Based Light-Emitting Diode With a p-GaN/i-InGaN Superlattice Structure

Tsung-Han Tsai, Chih-Hung Yen, Tsung-Yuan Tsai, 2009, IEEE Electron Device Letters.

On the Hydrogen Sensing Behaviors of an InAlAs-Based Schottky Diode with a Thin Pt Catalytic Metal

Wen-Chau Liu, Huey-Ing Chen, C. Yen, 2008 .

Study of InGaP/InGaAs double doped channel heterostructure field-effect transistors (DDCHFETs)

Wen-Chau Liu, C. Yen, H. Chuang, 2004 .

Characteristics of a Low-Damage GaN-Based Light-Emitting Diode Using a KOH-Treated Wet-Etching Approach

Wen-Chau Liu, C. Yen, T. Tsai, 2009 .

Characteristics and comparison of In0.49Ga0.51P/InGaAs single and double delta-doped pseudomorphic high electron mobility transistors

Kuan-Po Lin, Chin-Chuan Cheng, Kun-Wei Lin, 2001 .

Investigation of mesa-sidewall effects on direct current and radio frequency characteristics of Ga0.51In0.49P/In0.15Ga0.85As/Ga0.51In0.49P pseudomorphic high electron mobility transistors

Wen-Chau Liu, C. Yen, Kun-Wei Lin, 2000 .