H. Murakami

发表

Terahertz time-domain spectroscopy of wide-bandgap semiconductors GaN and β-Ga2O3

V. C. Agulto, Y. Kumagai, Y. Mori, 2021, Other Conferences.

Thermodynamic Analysis of Various Types of Hydride Vapor Phase Epitaxy System for High-Speed Growth of InN

Y. Kumagai, A. Koukitu, H. Murakami, 2006 .

Recent progress in Ga2O3 power devices

Akito Kuramata, Masataka Higashiwaki, Kohei Sasaki, 2016 .

Crystal growth of HVPE-GaN doped with germanium

M. Boćkowski, H. Murakami, E. Litwin-Staszewska, 2017 .

Quasiequilibrium crystal shape and kinetic Wulff plot for GaN grown by trihalide vapor phase epitaxy using GaCl3

A. Koukitu, K. Iso, H. Murakami, 2017 .

Thick nonpolar m-plane and semipolar ( 10 1 1 ) GaN on an ammonothermal seed by tri-halide vapor-phase epitaxy using GaCl3

A. Koukitu, K. Iso, H. Murakami, 2017 .

Tri-halide vapor phase epitaxy of thick GaN using gaseous GaCl 3 precursor

Y. Kumagai, A. Koukitu, H. Murakami, 2016 .

High rate InN growth by two-step precursor generation hydride vapor phase epitaxy

Y. Kumagai, A. Koukitu, B. Monemar, 2015 .

Electrical properties of $\beta$-Ga2O3 homoepitaxial layer measured by terahertz time-domain spectroscopy

H. Kitahara, Y. Kumagai, N. Sarukura, 2020, 2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz).

Influence of high-temperature processing on the surface properties of bulk AlN substrates

Toru Nagashima, Y. Kumagai, A. Koukitu, 2016 .

Temperature dependence of Ga2O3 growth by halide vapor phase epitaxy on sapphire and β-Ga2O3 substrates

Y. Kumagai, K. Goto, H. Murakami, 2020 .

State-of-the-art technologies of gallium oxide power devices

Y. Kumagai, M. Higashiwaki, A. Kuramata, 2017 .

Homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy

S. Yamakoshi, Y. Kumagai, A. Koukitu, 2014 .

Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers grown by halide vapor phase epitaxy

S. Yamakoshi, Y. Kumagai, A. Koukitu, 2016 .

Two-Step Growth of (0001) ZnO Single-Crystal Layers on (0001) Sapphire Substrates by Halide Vapor Phase Epitaxy

Y. Kumagai, A. Koukitu, H. Murakami, 2011 .

GaN growth via tri-halide vapor phase epitaxy using solid source of GaCl3: investigation of the growth dependence on NH3 and additional Cl2

H. Murakami, K. Takemoto, Nao Takekawa, 2019, Japanese Journal of Applied Physics.

Thick and high-quality GaN growth on GaAs (111) substrates for preparation of freestanding GaN

Y. Kumagai, A. Koukitu, H. Murakami, 2002 .

Hydride vapor phase epitaxy of InN by the formation of InCl3 using In metal and Cl2

Y. Kumagai, A. Koukitu, H. Murakami, 2007 .

Crystallization of semi-insulating HVPE-GaN with solid iron as a source of dopants

M. Boćkowski, H. Murakami, E. Litwin-Staszewska, 2017 .

Growth of GaN on a three-dimensional SCAATTM bulk seed by tri-halide vapor phase epitaxy using GaCl3

A. Koukitu, K. Iso, H. Murakami, 2019, Japanese Journal of Applied Physics.

Influence of substrate polarity of (0 0 0 1) and (0 0 0 1¯)GaN surfaces on hydride vapor-phase epitaxy of InN

Y. Kumagai, A. Koukitu, H. Murakami, 2010 .

Influence of hydrogen input partial pressure on the polarity of InN on GaAs (1 1 1)A grown by metalorganic vapor phase epitaxy

Y. Kumagai, A. Koukitu, H. Murakami, 2008 .

High-Temperature Heat-Treatment of c-, a-, r-, and m-Plane Sapphire Substrates in Mixed Gases of H2 and N2

Y. Kumagai, A. Koukitu, H. Murakami, 2013 .

Influence of source gas supply sequence on hydride vapor phase epitaxy of AlN on (0001) sapphire substrates

Toru Nagashima, M. Harada, H. Yanagi, 2012 .

Thermodynamic analysis on HVPE growth of InGaN ternary alloy

Y. Kumagai, A. Koukitu, H. Murakami, 2011 .

Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport

Toru Nagashima, Y. Kumagai, A. Koukitu, 2012 .

Preparation of 2-in.-diameter (001) β-Ga2O3 homoepitaxial wafers by halide vapor phase epitaxy

S. Yamakoshi, Y. Kumagai, K. Sasaki, 2017 .

Vinyltitanium as an initiator for the polymerization of acetylene

Y. Kumagai, H. Murakami, A. Tsubouchi, 2002 .

Ga2O3 field-plated schottky barrier diodes with a breakdown voltage of over 1 kV

S. Yamakoshi, Y. Kumagai, B. Monemar, 2016, 2016 74th Annual Device Research Conference (DRC).

Ga2O3 Schottky barrier diodes with n−-Ga2O3 drift layers grown by HVPE

S. Yamakoshi, Y. Kumagai, A. Koukitu, 2015, 2015 73rd Annual Device Research Conference (DRC).

Formation mechanism of AlN whiskers on sapphire surfaces heat-treated in a mixed flow of H2 and N2

Y. Kumagai, A. Koukitu, K. Takada, 2016 .

Polarities of AlN films and underlying 3C-SiC intermediate layers grown on (1 1 1) Si substrates

A. Koukitu, H. Murakami, Takayoshi Yamane, 2008 .

Thermodynamic analysis of vapor-phase epitaxy of CdTe using a metallic Cd source

A. Koukitu, K. Iso, H. Murakami, 2017 .

Direct Growth of CdTe on a (211) Si Substrate with Vapor Phase Epitaxy Using a Metallic Cd Source

A. Koukitu, K. Iso, H. Murakami, 2017, Journal of Electronic Materials.

Thermal and chemical stabilities of group-III sesquioxides in a flow of either N2 or H2

S. Yamakoshi, Y. Kumagai, A. Koukitu, 2016 .

A new system for growing thick InN layers by hydride vapor phase epitaxy

Y. Kumagai, A. Koukitu, H. Murakami, 2007 .

Thermodynamic study on the role of hydrogen during hydride vapor phase epitaxy of Alx Ga1–xN

Y. Kumagai, A. Koukitu, H. Murakami, 2006 .

Dependence of surface morphology at initial growth of CdTe on the II/VI on (2 1 1) Si substrates by vapor phase epitaxy using metallic Cd source

A. Koukitu, K. Iso, H. Murakami, 2019, Journal of Crystal Growth.

Tri-halide vapor-phase epitaxy of GaN using GaCl3 on polar, semipolar, and nonpolar substrates

A. Koukitu, K. Iso, H. Murakami, 2016 .

Growth of Highly Crystalline GaN at High Growth Rate by Trihalide Vapor‐Phase Epitaxy

M. Bulsara, Y. Kumagai, A. Koukitu, 2020, physica status solidi (b).

Growth temperatures and the excess chlorine effect of N-Polar GaN growth via tri-halide vapor phase epitaxy

Y. Kumagai, A. Koukitu, A. Yamaguchi, 2018, Journal of Crystal Growth.

1-kV vertical Ga2O3 field-plated Schottky barrier diodes

Akito Kuramata, Masataka Higashiwaki, Keita Konishi, 2017 .

Effect of substrate orientation on homoepitaxial growth of β-Ga2O3 by halide vapor phase epitaxy

S. Yamakoshi, Y. Kumagai, M. Higashiwaki, 2022, Applied Physics Letters.

Halide Vapor Phase Epitaxy 1

Y. Kumagai, B. Monemar, K. Goto, 2020 .

Vertical Ga2O3 Schottky Barrier Diodes With Guard Ring Formed by Nitrogen-Ion Implantation

Y. Kumagai, M. Higashiwaki, M. Wong, 2019, IEEE Electron Device Letters.

Comparison of O2 and H2O as oxygen source for homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy

S. Yamakoshi, Y. Kumagai, B. Monemar, 2018, Journal of Crystal Growth.

All-ion-implanted planar-gate current aperture vertical Ga2O3 MOSFETs with Mg-doped blocking layer

S. Yamakoshi, Y. Kumagai, M. Higashiwaki, 2018, Applied Physics Express.

Thermal stability of β-Ga2O3 in mixed flows of H2 and N2

S. Yamakoshi, Y. Kumagai, A. Koukitu, 2015 .

Split Ga vacancies in n-type and semi-insulating β-Ga2O3 single crystals

Y. Kumagai, J. Etula, F. Tuomisto, 2021, Applied Physics Letters.

Growth of Fe-Doped Thick GaN Layers for Preparation of Semi-Insulating GaN Substrates

Y. Kumagai, A. Koukitu, H. Murakami, 2005 .

High-temperature growth of thick AlN layers on sapphire (0 0 0 1) substrates by solid source halide vapor-phase epitaxy

Y. Kumagai, A. Koukitu, H. Murakami, 2008 .

MOVPE-like HVPE of AlN using solid aluminum trichloride source

Y. Kumagai, A. Koukitu, H. Murakami, 2007 .

Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl3 and NH3

Y. Kumagai, A. Koukitu, H. Murakami, 2006 .

Acceptor doping of β-Ga2O3 by Mg and N ion implantations

S. Yamakoshi, Y. Kumagai, M. Higashiwaki, 2018, Applied Physics Letters.

Influence of intermediate layers on thick InGaN growth using tri-halide vapor phase epitaxy

A. Koukitu, H. Murakami, K. Ema, 2019, Japanese Journal of Applied Physics.

Theoretical Analysis for Surface Reconstruction of AlN and InN in the Presence of Hydrogen

Y. Kumagai, A. Koukitu, H. Murakami, 2007 .

Ab initio calculation for the decomposition process of GaN (0 0 0 1) and (0 0 0 1¯) surfaces

Y. Kumagai, A. Koukitu, H. Murakami, 2008 .

Aperture-limited conduction and its possible mechanism in ion-implanted current aperture vertical β-Ga2O3 MOSFETs

Y. Kumagai, M. Higashiwaki, M. Wong, 2021 .

Investigation of polarity dependent InN{0001} decomposition in N2 and H2 ambient

Y. Kumagai, A. Koukitu, H. Murakami, 2009 .

Polarity dependence of AlN {0001} decomposition in flowing H2

Toru Kinoshita, Yoshinao Kumagai, Hisashi Murakami, 2007 .

In situ gravimetric monitoring of decomposition rate on the surface of (0001) c‐plane sapphire for the high temperature growth of AlN

Y. Kumagai, A. Koukitu, T. Araki, 2007 .

Electronic properties of the residual donor in unintentionally doped beta-Ga2O3

E. Janzén, N. T. Son, S. Yamakoshi, 2016 .

Halide vapor phase epitaxy of Si doped β-Ga2O3 and its electrical properties

Akito Kuramata, Masataka Higashiwaki, Keita Konishi, 2018, Thin Solid Films.

In situ gravimetric monitoring of surface reactions between sapphire and NH3

Y. Kumagai, A. Koukitu, K. Akiyama, 2009 .

Formation of AlN on sapphire surfaces by high-temperature heating in a mixed flow of H2 and N2

Y. Kumagai, A. Koukitu, K. Takada, 2012 .

In situ Gravimetric Monitoring of Thermal Decomposition and Hydrogen Etching Rates of 6H-SiC(0001) Si Face

T. Kimoto, Y. Kumagai, A. Koukitu, 2009 .

In situ Gravimetric Monitoring of Decomposition Rate on Surface of (1012) R-Plane Sapphire for High-Temperature Growth of Nonpolar AlN

Y. Kumagai, A. Koukitu, K. Akiyama, 2008 .

Growth of thin protective AlN layers on sapphire substrates at 1065 °C for hydride vapor phase epitaxy of AlN above 1300 °C

Y. Kumagai, A. Koukitu, Y. Kubota, 2008 .

Al- and N-polar AlN layers grown on c-plane sapphire substrates by modified flow-modulation MOCVD

Toru Kinoshita, Koji Kawasaki, Yoshinao Kumagai, 2007 .

Enhancement-Mode $\beta$ -Ga2O3 Current Aperture Vertical MOSFETs With N-Ion-Implanted Blocker

Y. Kumagai, M. Higashiwaki, M. Wong, 2020, IEEE Electron Device Letters.

Facet stability of GaN during tri-halide vapor phase epitaxy: an ab initio-based approach

A. Koukitu, Y. Kangawa, H. Murakami, 2021 .

Vapor Phase Epitaxy of (133) and (211) CdTe on (211) Si Substrates Using Metallic Cd Source

A. Koukitu, K. Iso, H. Murakami, 2018, Journal of Electronic Materials.

Current status of Ga2O3 power devices

Y. Kumagai, M. Higashiwaki, A. Kuramata, 2016 .

Self-Separation of a Thick AlN Layer from a Sapphire Substrate via Interfacial Voids Formed by the Decomposition of Sapphire

Toru Nagashima, Y. Kumagai, A. Koukitu, 2008 .

Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlN layers grown by HVPE

Toru Nagashima, Y. Kumagai, A. Koukitu, 2010 .

Preparation of a crack-free AlN template layer on sapphire substrate by hydride vapor-phase epitaxy at 1450 °C

Y. Kumagai, A. Koukitu, K. Takada, 2009 .

Effects of substrate nitridation and buffer layer on the crystalline improvements of semi-polar InN(101¯3) crystal on GaAs(110) by MOVPE

Y. Kumagai, A. Koukitu, H. Murakami, 2013 .

Semi-polar InN(10 bar 1 3) dominant growth on GaAs(110) substrate by mixing hydrogen in carrier gas

Y. Kumagai, A. Koukitu, H. Murakami, 2011 .

Terahertz Time-Domain Ellipsometry of Heavily Doped β-Ga2 O3

V. C. Agulto, Y. Kumagai, T. Iwamoto, 2022, 2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz).

Recent progress in Ga 2 O 3 power devices

Akito Kuramata, Masataka Higashiwaki, Kohei Sasaki, 2016 .

Vertical β-Ga2O3 Schottky barrier diodes with trench staircase field plate

Y. Kumagai, Surinder Kumar, M. Higashiwaki, 2022, Applied Physics Express.

Thermodynamic study of β-Ga2O3 growth by halide vapor phase epitaxy

Akito Kuramata, Shigenobu Yamakoshi, Yoshinao Kumagai, 2014 .

Trade-off between thickness and temperature ramping rate of GaN buffer layer studied for high quality GaN growth on GaAs (1 1 1)A substrate

Y. Kumagai, A. Koukitu, Y. Kangawa, 2004 .

Vertical Gallium Oxide Transistors with Current Aperture Formed Using Nitrogen-Ion Implantation Process

Y. Kumagai, M. Higashiwaki, M. Wong, 2020, 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).

Current Aperture Vertical $\beta$ -Ga2O3 MOSFETs Fabricated by N- and Si-Ion Implantation Doping

Masataka Higashiwaki, Yoshinao Kumagai, Hisashi Murakami, 2019, IEEE Electron Device Letters.

Temperature dependence of InN growth on (0001) sapphire substrates by atmospheric pressure hydride vapor phase epitaxy

Y. Kumagai, A. Koukitu, H. Murakami, 2010 .

Effect of High NH3 Input Partial Pressure on Hydride Vapor Phase Epitaxy of InN Using Nitrided (0001) Sapphire Substrates

Y. Kumagai, A. Koukitu, P. Holtz, 2013 .

Study of the Decomposition Processes of (0001)AlN in a Hydrogen Atmosphere

Y. Kumagai, A. Koukitu, H. Murakami, 2007 .

Hydride vapor phase epitaxy of AlN : thermodynamic analysis of aluminum source and its application to growth

Y. Kumagai, A. Koukitu, Y. Kangawa, 2003 .

Growth of thick InGaN layers by tri-halide vapor phase epitaxy

Y. Kumagai, A. Koukitu, H. Murakami, 2014 .

First demonstration of vertical Ga2O3 MOSFET: Planar structure with a current aperture

S. Yamakoshi, Y. Kumagai, M. Higashiwaki, 2017, 2017 75th Annual Device Research Conference (DRC).

Developments of Ga2O3 Electronic Devices for Next-Generation Power Switching

C. Lin, K. Sasaki, M. Higashiwaki, 2018 .

Stability and degradation of isolation and surface in Ga2O3 devices

S. Yamakoshi, Y. Kumagai, M. Meneghini, 2019, Microelectronics and reliability.

Current Status of Gallium Oxide-Based Power Device Technology

S. Yamakoshi, Y. Kumagai, A. Koukitu, 2015, 2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

Current Status of Development on Gallium Oxide Power Devices

Y. Kumagai, M. Higashiwaki, A. Kuramata, 2016 .

Gallium Oxide Schottky Barrier Diodes

Akito Kuramata, Masataka Higashiwaki, Kohei Sasaki, 2016 .

Structural and Optical Properties of Carbon-Doped AlN Substrates Grown by Hydride Vapor Phase Epitaxy Using AlN Substrates Prepared by Physical Vapor Transport

H. Okamoto, Toru Nagashima, Y. Kumagai, 2012 .

Hydride vapor phase epitaxy of Si-doped AlN layers using SiCl4 as a doping gas

Toru Nagashima, Y. Kumagai, B. Monemar, 2020 .

Growth of semi-polar InN layer on GaAs (1 1 0) surface by MOVPE

Y. Kumagai, A. Koukitu, H. Murakami, 2011 .

Dislocation density reduction in (101 ̅1 ̅) GaN at a high temperature using tri-halide vapor phase epitaxy

Hisashi Murakami, Kenji Iso, Shoma Ohtaki, 2020, OPTO.

Anisotropy, phonon modes, and free charge carrier parameters in monoclinic β-gallium oxide single crystals

S. Yamakoshi, Y. Kumagai, M. Schubert, 2015, 1512.08590.

Growth of thick AlxGa1−xN ternary alloy by hydride vapor-phase epitaxy

Yoshinao Kumagai, Hisashi Murakami, Takayoshi Yamane, 2007 .

Influence of substrate polarity on the low-temperature GaN buffer layer growth on GaAs (111)A and (111)B surfaces

Y. Kumagai, A. Koukitu, H. Murakami, 2003 .

Temperature Dependence of the Anisotropic Dielectric Properties of Semiinsulating β-Ga2O3 in the Terahertz Region

Y. Kumagai, K. Kato, V. Agulto, 2023, 2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz).