I. K. Yoo

HfZrOx-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications

H. Hwang, Jeonghwan Song, J. Woo, 2017, IEEE Electron Device Letters.

Improved Endurance of HfO2-Based Metal- Ferroelectric-Insulator-Silicon Structure by High-Pressure Hydrogen Annealing

H. Hwang, Jeonghwan Song, Seungyeol Oh, 2019, IEEE Electron Device Letters.

Ferroelectric materials for neuromorphic computing

I. K. Yoo, S. Oh, H. Hwang, 2019, APL Materials.

Perspective: A review on memristive hardware for neuromorphic computation

Hyunsang Hwang, H. Hwang, C. Sung, 2018, Journal of Applied Physics.