T. Fukano

Low Power and High Speed Switching of Ti-doped NiO ReRAM under the Unipolar Voltage Source of less than 3 V

K. Tsunoda, H. Noshiro, Y. Sugiyama, 2007, 2007 IEEE International Electron Devices Meeting.

Thin-Base Bipolar Technology by Low-Temperature Photo-Epitaxy

T. Yamazaki, T. Sugii, T. Fukano, 1987, 1987 Symposium on VLSI Technology. Digest of Technical Papers.

Si single-electron tunneling transistor with nanoscale floating dot stacked on a Coulomb island by self-aligned process

N. Yokoyama, T. Fukano, A. Nakajima, 1999 .

50-nm gate Schottky source/drain p-MOSFETs with a SiGe channel

Y. Yamashita, T. Mimura, A. Endoh, 2002, IEEE Electron Device Letters.

Upper mantle and crustal seismic structure beneath the Northwestern Pacific Basin using a seafloor borehole broadband seismometer and ocean bottom seismometers

Masanao Shinohara, Eiichiro Araki, Toshihiko Kanazawa, 2008 .

Ultra Sharp Trench Capacitors Formed by Peripheral Etching

T. Fukano, H. Ishikawa, T. Ito, 1984 .

21 psec switching 0.1 /spl mu/m-CMOS at room temperature using high performance Co salicide process

T. Yamazaki, T. Sugii, T. Fukano, 1993, Proceedings of IEEE International Electron Devices Meeting.

Si hetero-bipolar transistor with an SiC emitter thin epitaxial base

T. Yamazaki, T. Sugii, K. Suzuki, 1989, International Technical Digest on Electron Devices Meeting.

Epitaxially grown base transistor for high-speed operation

T. Yamazaki, T. Sugii, T. Fukano, 1987, IEEE Electron Device Letters.