A. Fox

Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications

D. Wolansky, B. Tillack, C. Wenger, 2009 .

On the role of Ti adlayers for resistive switching in HfO2-based metal-insulator-metal structures: Top versus bottom electrode integration

D. Wolansky, B. Tillack, E. Miranda, 2011 .

Resistive switching in TiN/HfO2/Ti/TiN MIM devices for future nonvolatile memory applications

B. Tillack, D. Wolansky, M. Fraschke, 2009, 2009 10th Annual Non-Volatile Memory Technology Symposium (NVMTS).

Thermal oxidation of chemical vapour deposited tungsten layers on silicon substrates for embedded non-volatile memory application

D. Wolansky, B. Tillack, P. Zaumseil, 2009 .

Resistive switching behavior in TiN/HfO2/Ti/TiN devices

R. Kraemer, B. Tillack, D. Wolansky, 2012, 2012 International Semiconductor Conference Dresden-Grenoble (ISCDG).