Chen-Han Tsai

Robust High-Resistance State and Improved Endurance of $\hbox{HfO}_{X}$ Resistive Memory by Suppression of Current Overshoot

M. Tsai, C. Lien, Weisu Chen, 2011, IEEE Electron Device Letters.

Resistance instabilities in a filament-based resistive memory

Heng-Yuan Lee, Pang-Shiu Chen, Ming-Jinn Tsai, 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).

Impact of self-complementary resistance switch induced by over-reset energy on the memory reliability of hafnium oxide based resistive random access memory

Frederick T. Chen, T. Wu, Heng-Yuan Lee, 2014 .

Statistical analysis of retention behavior and lifetime prediction of HfOBxB-based RRAM

Ru Huang, Heng-Yuan Lee, Pang-Shiu Chen, 2011, 2011 International Reliability Physics Symposium.

Improved resistive switching properties of Ti/ZrO2/Pt memory devices for RRAM application

Dai-Ying Lee, Chih-Yang Lin, Tseung-Yuen Tseng, 2011 .

Resistance switching for RRAM applications

Heng-Yuan Lee, Yu-Sheng Chen, Pang-Shiu Chen, 2011, Science China Information Sciences.

Comprehensively study of read disturb immunity and optimal read scheme for high speed HfOx based RRAM with a Ti layer

Heng-Yuan Lee, Pang-Shiu Chen, Frederick T. Chen, 2010, Proceedings of 2010 International Symposium on VLSI Technology, System and Application.

Experimental investigation of the reliability issue of RRAM based on high resistance state conduction

Frederick T. Chen, M. Tsai, Weisu Chen, 2011, Nanotechnology.

Impacts of device architecture and low current operation on resistive switching of HfOx nanoscale devices

Frederick T. Chen, T. Wu, M. Tsai, 2013 .