J. Stiers

First demonstration of ferroelectric Si:HfO2 based 3D FE-FET with trench architecture for dense nonvolatile memory application

J. V. Houdt, J. van Houdt, A. Milenin, 2021, 2021 IEEE International Memory Workshop (IMW).

First Demonstration of Ruthenium and Molybdenum Word lines Integrated into 40nm Pitch 3D-NAND Memory Devices

M. Rosmeulen, S. Ramesh, F. Sebaai, 2021, 2021 Symposium on VLSI Technology.

Understanding the kinetics of Metal Induced Lateral Crystallization process to enhance the poly-Si channel quality and current conduction in 3-D NAND memory

M. Rosmeulen, S. Ramesh, K. Opsomer, 2021, 2021 IEEE International Electron Devices Meeting (IEDM).