T. Park

发表

Highly Uniform, Electroforming‐Free, and Self‐Rectifying Resistive Memory in the Pt/Ta2O5/HfO2‐x/TiN Structure

Jun Yeong Seok, C. S. Hwang, Seul Ji Song, 2014 .

Double‐Layer‐Stacked One Diode‐One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 109

Yeong Jae Kwon, C. S. Hwang, J. Yoon, 2017 .

Nociceptive Memristor

Young Jae Kwon, C. Hwang, K. Kim, 2018, Advanced materials.

A Review of Three‐Dimensional Resistive Switching Cross‐Bar Array Memories from the Integration and Materials Property Points of View

Doo Seok Jeong, Tae Hyung Park, Cheol Seong Hwang, 2014 .

Reduction method of gate-to-drain capacitance by oxide spacer formation in tunnel field-effect transistor with elevated drain

J. Kim, D. Kwon, Byung-Gook Park, 2016 .

Multi-layer WSe2 field effect transistor with improved carrier-injection contact by using oxygen plasma treatment

C. Hwang, Byung-Gook Park, Jong-Ho Lee, 2017 .

Fabrication of a Cu‐Cone‐Shaped Cation Source Inserted Conductive Bridge Random Access Memory and Its Improved Switching Reliability

Young Jae Kwon, Tae Hyung Park, Cheol Seong Hwang, 2019, Advanced Functional Materials.

Defect engineered electroforming-free analog HfOx memristor and its application to the neural network.

Tae Hyung Park, Woohyun Kim, Cheol Seong Hwang, 2019, ACS applied materials & interfaces.

Balancing the Source and Sink of Oxygen Vacancies for the Resistive Switching Memory.

Young Jae Kwon, Gil Seop Kim, Hyo Cheon Woo, 2018, ACS applied materials & interfaces.

Performance Improvement of an Al/TiO2/Al Electronic Bipolar Resistive Switching Memory Cell via Inserting an Ultrathin ZrO2 Layer

S. Hyun, C. S. Hwang, T. Park, 2022, ACS Applied Electronic Materials.

Investigation of the retention performance of an ultra-thin HfO2 resistance switching layer in an integrated memory device

C. Hwang, H. Kim, S. Kim, 2018, Journal of Applied Physics.

Roles of conducting filament and non-filament regions in the Ta2O5 and HfO2 resistive switching memory for switching reliability.

Tae Hyung Park, Cheol Seong Hwang, Byung Joon Choi, 2017, Nanoscale.

Thickness effect of ultra-thin Ta2O5 resistance switching layer in 28 nm-diameter memory cell

Tae Hyung Park, Cheol Seong Hwang, Suock Chung, 2015, Scientific Reports.

Thickness‐dependent electroforming behavior of ultra‐thin Ta2O5 resistance switching layer

Byung Joon Choi, C. Hwang, K. Kim, 2015 .

Pt/Ta2O5/HfO2−x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash

Young Jae Kwon, Tae Hyung Park, Cheol Seong Hwang, 2015, Advanced materials.

Dual Conical Conducting Filament Model in Resistance Switching TiO2 Thin Films

Tae Hyung Park, Kyung Min Kim, Cheol Seong Hwang, 2015, Scientific Reports.

Filament Shape Dependent Reset Behavior Governed by the Interplay between the Electric Field and Thermal Effects in the Pt/TiO2/Cu Electrochemical Metallization Device

Young Jae Kwon, Tae Hyung Park, Cheol Seong Hwang, 2017 .

A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory.

Young Jae Kwon, Tae Hyung Park, Cheol Seong Hwang, 2016, Nanoscale.

Evolution of the shape of the conducting channel in complementary resistive switching transition metal oxides.

Tae Hyung Park, Cheol Seong Hwang, Kyung Jean Yoon, 2014, Nanoscale.

A Stateful Logic Family Based on a New Logic Primitive Circuit Composed of Two Antiparallel Bipolar Memristors

Xinglong Shao, Nuo Xu, Tae Hyung Park, 2019, Adv. Intell. Syst..

The current limit and self-rectification functionalities in the TiO2/HfO2 resistive switching material system.

Young Jae Kwon, Tae Hyung Park, Cheol Seong Hwang, 2017, Nanoscale.