X. Shao

发表

Bias-polarity-dependent resistance switching in W/SiO2/Pt and W/SiO2/Si/Pt structures

C. Hwang, Hao Jiang, J. Yoon, 2016, Scientific Reports.

Bipolar Uniformity in Al/TiOx/Al Resistive Switching Memory

Hao Jiang, Ran Chen, X. Shao, 2014 .

Electronic resistance switching in the Al/TiO(x)/Al structure for forming-free and area-scalable memory.

Sijung Yoo, Hao Jiang, Cheol Seong Hwang, 2015, Nanoscale.

Pt/Ta2O5/HfO2−x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash

Young Jae Kwon, Tae Hyung Park, Cheol Seong Hwang, 2015, Advanced materials.

Single‐Cell Stateful Logic Using a Dual‐Bit Memristor

Nuo Xu, R. Stanley Williams, Xinglong Shao, 2018, physica status solidi (RRL) - Rapid Research Letters.

Filament Shape Dependent Reset Behavior Governed by the Interplay between the Electric Field and Thermal Effects in the Pt/TiO2/Cu Electrochemical Metallization Device

Young Jae Kwon, Tae Hyung Park, Cheol Seong Hwang, 2017 .

A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory.

Young Jae Kwon, Tae Hyung Park, Cheol Seong Hwang, 2016, Nanoscale.

Two-step reset in the resistance switching of the Al/TiOx/Cu structure.

C. Hwang, K. J. Yoon, X. Shao, 2013, ACS applied materials & interfaces.

Thin TiOx layer as a voltage divider layer located at the quasi-Ohmic junction in the Pt/Ta2O5/Ta resistance switching memory.

Hao Jiang, Cheol Seong Hwang, C. Hwang, 2017, Nanoscale.

A Stateful Logic Family Based on a New Logic Primitive Circuit Composed of Two Antiparallel Bipolar Memristors

Xinglong Shao, Nuo Xu, Tae Hyung Park, 2019, Adv. Intell. Syst..

The current limit and self-rectification functionalities in the TiO2/HfO2 resistive switching material system.

Young Jae Kwon, Tae Hyung Park, Cheol Seong Hwang, 2017, Nanoscale.

Interface engineering for improving reliability of resistance switching in Cu/HfO2/TiO2/Pt structure

Hao Jiang, Kailiang Zhang, Cheol Seong Hwang, 2015 .