Yuanyuan Zhang

Superior resistive switching memory and biological synapse properties based on a simple TiN/SiO2/p-Si tunneling junction structure

Jianhui Zhao, Xiaobing Yan, Zhenyu Zhou, 2017 .

Highly improved performance in Zr0.5Hf0.5O2 films inserted with graphene oxide quantum dots layer for resistive switching non-volatile memory

Jianhui Zhao, Xiaobing Yan, Jingsheng Chen, 2017 .

A metal/Ba0.6Sr0.4TiO3/SiO2/Si single film device for charge trapping memory towards a large memory window

Jianhui Zhao, Xiaobing Yan, Tao Yang, 2017 .

An electronic synapse memristor device with conductance linearity using quantized conduction for neuroinspired computing

Yifei Pei, Kaiyang Wang, Lei Zhang, 2019, Journal of Materials Chemistry C.

Roles of grain boundary and oxygen vacancies in Ba 0.6 Sr 0.4 TiO 3 films for resistive switching device application

Xiaobing Yan, J. Zhao, Zhenyu Zhou, 2016 .

A Graphene Oxide Quantum Dots Embedded Charge Trapping Memory With Enhanced Memory Window and Data Retention

Jianhui Zhao, Xiaobing Yan, Tao Yang, 2018, IEEE Journal of the Electron Devices Society.