B. Hudec

发表

Strong Read and Write Interference Induced by Breakdown Failure in Crossbar Arrays

T. Hou, Po-Tsun Liu, Che-Chia Chang, 2020, IEEE Transactions on Electron Devices.

Interface engineered HfO2-based 3D vertical ReRAM

Tuo-Hung Hou, I-Ting Wang, Che-Chia Chang, 2016 .

Atomic layer deposition of high-permittivity TiO2 dielectrics with low leakage current on RuO2 in TiCl4-based processes

J. Aarik, T. Uustare, B. Hudec, 2012 .

Exploiting analogue OxRAM conductance modulation for contrast enhancement application

M. Suri, B. Hudec, A. Kumar, 2020, Electronics Letters.

Semi-Empirical $RC$ Circuit Model for Non-Filamentary Bi-Layer OxRAM Devices

T. Hou, M. Suri, B. Hudec, 2020, IEEE Transactions on Electron Devices.

Impact of plasma treatment on electrical properties of TiO2/RuO2 based DRAM capacitor

J. Aarik, T. Uustare, B. Hudec, 2013 .

Electrical properties of TiO 2 -based MIM capacitors deposited by TiCl 4 and TTIP based atomic layer deposition processes

C. Hwang, J. Han, J. Aarik, 2011 .

Additive Manufacturing in Atomic Layer Processing Mode

G. Vanko, Sarah Tymek, M. Barr, 2022, Small methods.

Atomic layer deposition of high-quality Al2O3 and Al-doped TiO2 thin films from hydrogen-free precursors

J. Aarik, V. Sammelselg, H. Mändar, 2014 .

Post-deposition processing and oxygen content of TiO2-based capacitors

J. Aarik, S. Gai, B. Hudec, 2011 .

Atomic layer deposition of rutile-phase TiO2 on RuO2 from TiCl4 and O3: Growth of high-permittivity dielectrics with low leakage current

J. Aarik, H. Mändar, B. Hudec, 2013 .

SLIM: Simultaneous Logic-in-Memory Computing Exploiting Bilayer Analog OxRAM Devices

Tuo-Hung Hou, Che-Chia Chang, Manan Suri, 2018, Scientific Reports.

Nagarajan Raghavan, Jordi Suñé, H.-S. Philip Wong, 2018, Advanced Electronic Materials.

Influence of growth temperature on the structure and electrical properties of high‐permittivity TiO2 films in TiCl4‐H2O and TiCl4‐O3 atomic‐layer‐deposition processes

J. Aarik, H. Mändar, B. Hudec, 2014 .

Internal current amplification induced by dielectric hole trapping in monolayer MoS2 transistor

T. Hou, B. Hudec, Pang-Shiuan Liu, 2017, Nanotechnology.

Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication

Tuo-Hung Hou, Elisa Vianello, Hangbing Lv, 2017, Journal of Electroceramics.

3D resistive RAM cell design for high-density storage class memory—a review

I-Ting Wang, Che-Chia Chang, Boris Hudec, 2016, Science China Information Sciences.

Nanoscale characterization of TiO(2) films grown by atomic layer deposition on RuO(2) electrodes.

C. Hwang, L. Frey, M. Rommel, 2014, ACS applied materials & interfaces.

Atomic layer deposition grown metal-insulator-metal capacitors with RuO2 electrodes and Al-doped rutile TiO2 dielectric layer

J. Aarik, E. Dobročka, B. Hudec, 2011 .

Analysis of leakage current mechanisms in RuO2–TiO2–RuO2 MIM structures

F. Schwierz, M. Mikolasek, J. Aarik, 2011 .

High-permittivity metal-insulator-metal capacitors with TiO2 rutile dielectric and RuO2 bottom electrode

J. Aarik, T. Lalinsky, E. Dobročka, 2010 .

Resistive switching in TiO2-based metal-insulator-metal structures with Al2O3 barrier layer at the metal/dielectric interface

J. Fedor, E. Dobročka, B. Hudec, 2014 .

Challenges and opportunities toward online training acceleration using RRAM-based hardware neural network

H.-S. Philip Wong, Chih-Cheng Chang, Tuo-Hung Hou, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

Methodology for Realizing VMM with Binary RRAM Arrays: Experimental Demonstration of Binarized-ADALINE using OxRAM Crossbar

Manan Suri, Sandeep Kaur Kingra, Vivek Parmar, 2020, 2020 IEEE International Symposium on Circuits and Systems (ISCAS).

Model for the Current–Voltage Characteristic of Resistive Switches Based on Recursive Hysteretic Operators

E. Miranda, J. Suñé, B. Hudec, 2015, IEEE Electron Device Letters.

Resistive switching in nonplanar HfO2-based structures with variable series resistance

M. Blaho, D. Gregušová, K. Cico, 2015 .

Resistive switching in HfO2-based atomic layer deposition grown metal–insulator–metal structures

Edmund Dobročka, Karol Fröhlich, Peter Jančovič, 2014 .

Stabilization of the Solid-Electrolyte-Interphase Layer and Improvement of the Performance of Silicon–Graphite Anodes by Nanometer-Thick Atomic-Layer-Deposited ZnO Films

B. Hudec, P. Nádaždy, Magdaléna Precnerová, 2024, ACS Applied Nano Materials.