Amit Sharma

发表

Effect of TiW blocking layer and temperature annealing on resistive switching parameters of Hafnium oxide based CBRAM device

Lalit Kumar Lata, P. Jain, Amit Sharma, 2022 .

Fabrication and characterization of Al gate n-MOSFET, on-chip fabricated with Si3N4 ISFET

Amit Sharma, Soumendu Sinha, Ravindra Mukhiya, 2015, 2015 19th International Symposium on VLSI Design and Test.